Infrared laser based on intersubband transitions in quantum wells

Yang, Rui Q.

doi:10.1006/spmi.1995.1017

Cited by 448 publications

(138 citation statements)

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“…Nevertheless, the most significant observable consequence of the short carrier lifetime is that the lowest pulsed threshold power density reported at RT has been P th ≈12 kW cm − 2 (refs 6, 7) This value has not improved in over three years, even as other QCL performance characteristics have advanced significantly. Mid-infrared interband cascade lasers (ICLs) 8,9 generally have the advantage of much longer lifetimes characteristic of the interband active transition 10 , although with considerably stronger temperature dependence. For many important applications such as battery-operated fielded systems that require relatively low output powers and are operated very close to the lasing threshold, the threshold power density at RT represents one of the most important figure of merit.…”

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confidence: 99%

Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption

et al. 2011

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The interband cascade laser differs from any other class of semiconductor laser, conventional or cascaded, in that most of the carriers producing population inversion are generated internally, at semimetallic interfaces within each stage of the active region. Here we present simulations demonstrating that all previous interband cascade laser performance has suffered from a significant imbalance of electron and hole densities in the active wells. We further confirm experimentally that correcting this imbalance with relatively heavy n-type doping in the electron injectors substantially reduces the threshold current and power densities relative to all earlier devices. At room temperature, the redesigned devices require nearly two orders of magnitude less input power to operate in continuous-wave mode than the quantum cascade laser. The interband cascade laser is consequently the most attractive option for gas sensing and other spectroscopic applications requiring low output power and minimum heat dissipation at wavelengths extending from 3 µm to beyond 6 µm.

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confidence: 99%

Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption

et al. 2011

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“…Recently, the most competitive mid-IR semiconductor lasers are realized with GaAs-and GaSb-based III-V material system making use of their unique intersubband (Bauer, et al, 2011;Yu, Darvish, Evans, Nguyen, Slivken, & Razeghi, 2006;Slivken, Evans, Zhang, & Razeghi, 2007) and inter-band (Yang R. Q., 1995;Yang, Bradshaw, Bruno, Pham, Wortman, & Tober, 2002) cascade transition mechanisms. Meanwhile, thanks to their suppressed Auger non-radiative loss, (Zhao, Wu, Majumdar, & Shi, 2003) IV-VI lead-salt materials have also been an excellent choice of mid-IR lasers for gas sensing application, and will continue to be so in the future.…”

Section: Mid-ir Surface Emitting 2d Photonic Crystal Lasersmentioning

confidence: 99%

Mid-Infrared Surface-Emitting Two Dimensional Photonic Crystal Semiconductor Lasers

Weng¹,

Shi²

2012

Photonic Crystals - Innovative Systems, Lasers and Waveguides

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“…The standard approach to design the active region is to take advantage of the so-called ''W-shaped'' alignment. In order to realize it, a broken-gap InAs/GaInSb/InAs system is employed, with InAs and GaInSb layers for the confinement of electrons and holes, respectively (Meyer et al 1995;Yang 1995). As an electron's barrier an AlSb layer is used, resulting in the AlSb/InAs/GaInSb/InAs/AlSb material combination.…”

Section: Introductionmentioning

confidence: 99%

Carrier transfer between confined and localized states in type II InAs/GaAsSb quantum wells

et al. 2017

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Temperature-resolved photoluminescence studies were performed on tenselystrained AlSb/InAs/GaAsSb W-shaped type II quantum wells. They revealed two emission bands: one at lower energy of localized origin resulting from carrier trapping states at interfaces and dominates at low-temperature; and one corresponding to the fundamental optical transition in the type II quantum well. With the temperature increase to 170-200 K the low-energy emission is quenched and the high-energy band dominates and its intensity increases, indicating carrier transfer processes between the respective states at elevated temperatures. In addition, the integrated photoluminescence intensity was measured as a function of excitation power. At high excitation regime the emission intensity of the lowenergy emission band saturated, indicating low density of states, thus confirming its localized nature. The depth of the localization potential at the InAs/GaAsSb interface was determined to be 13-15 meV.

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Infrared laser based on intersubband transitions in quantum wells

Cited by 448 publications

References 0 publications

Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption

Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption

Mid-Infrared Surface-Emitting Two Dimensional Photonic Crystal Semiconductor Lasers

Carrier transfer between confined and localized states in type II InAs/GaAsSb quantum wells

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