Infrared image sensors

Norton, Paul

doi:10.1117/12.56001

Cited by 132 publications

(52 citation statements)

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“…However, there are specific applications in which Si cannot compete with other materials. For example, in the field of the infrared detection PbSe 1 or InSb 2 are more suitable than Si. For this reason, the fabrication of an infrared photodetector based on Si would be of a great interest and the advantages are clear: any Si based material would be easily integrated in the very mature Si microelectronics industry.…”

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confidence: 99%

“…Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon E. Garc ıa-Hemme, 1 We have analyzed the spectral sub-bandgap photoresponse of silicon (Si) samples implanted with vanadium (V) at different doses and subsequently processed by pulsed-laser melting. Samples with V concentration clearly above the insulator-metal transition limit show an important increase of the photoresponse with respect to a Si reference sample.…”

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confidence: 99%

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Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon

García-Hemme

García-Hernansanz

Olea

et al. 2013

Applied Physics Letters

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We have analyzed the spectral sub-bandgap photoresponse of silicon (Si) samples implanted with vanadium (V) at different doses and subsequently processed by pulsed-laser melting. Samples with V concentration clearly above the insulator-metal transition limit show an important increase of the photoresponse with respect to a Si reference sample. Their photoresponse extends into the far infrared region and presents a sharp photoconductivity edge that moves towards lower photon energies as the temperature decreases. The increase of the value of the photoresponse is contrary to the classic understanding of recombination centers action and supports the predictions of the insulator-metal transition theory.

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confidence: 99%

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confidence: 99%

Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon

García-Hemme

García-Hernansanz

Olea

et al. 2013

Applied Physics Letters

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“…It is possible to find in the literature numerous works and patents describing or claiming PbSe detectors interfaced [33,[40][41][42] or monolithically integrated [43,44] with CMOS circuitry. However, in most cases the technologies and methods described correspond to the manufacture of small format detectors (linear, multielement, etc.)…”

Section: New Pbse Vpd Based Technology Descriptionmentioning

confidence: 99%

Polycrystalline lead selenide: the resurgence of an old infrared detector

Vergara

Montojo

Torquemada

et al. 2007

Opto-Electronics Review

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The existing technology for uncooled MWIR photon detectors based on polycrystalline lead salts is stigmatized for being a 50-year-old technology. It has been traditionally relegated to single-element detectors and relatively small linear arrays due to the limitations imposed by its standard manufacture process based on a chemical bath deposition technique (CBD) developed more than 40 years ago. Recently, an innovative method for processing detectors, based on a vapour phase deposition (VPD) technique, has allowed manufacturing the first 2D array of polycrystalline PbSe with good electro optical characteristics. The new method of processing PbSe is an all silicon technology and it is compatible with standard CMOS circuitry. In addition to its affordability, VPD PbSe constitutes a perfect candidate to fill the existing gap in the photonic and uncooled IR imaging detectors sensitive to the MWIR photons. The perspectives opened are numerous and very important, converting the old PbSe detector in a serious alternative to others uncooled technologies in the low cost IR detection market. The number of potential applications is huge, some of them with high commercial impact such as personal IR imagers, enhanced vision systems for automotive applications and other not less important in the security/defence domain such as sensors for active protection systems (APS) or low cost seekers.Despite the fact, unanimously accepted, that uncooled will dominate the majority of the future IR detection applications, today, thermal detectors are the unique plausible alternative. There is plenty of room for photonic uncooled and complementary alternatives are needed. This work allocates polycrystalline PbSe in the current panorama of the uncooled IR detectors, underlining its potentiality in two areas of interest, i.e., very low cost imaging IR detectors and MWIR fast uncooled detectors for security and defence applications. The new method of processing again converts PbSe into an emerging technology.

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“…There is a continued and growing interest in lead salt thin films as a result of their potential use as infrared detectors [90] and because of material's high sensitivity to near infrared radiation (λ = 0.7-4 μm). Additionally, lead-salt semiconductors are very favorable materials for mid-infrared usage because of their unique energy band structure, and extremely low Auger recombination (~2 orders lower) rate compared to narrow gap III-V or II-VI semiconductors [91].…”

Section: Introductionmentioning

confidence: 99%

“…PbS films with extremely high quality nano-crystalline structure have been manufactured using chemical bath deposition (CBD) technology [90]. PbS (and PbSe) grown in CBD does not require a post deposition treatment (e.g.…”

Section: Introductionmentioning

confidence: 99%

Mid-IR Range Photosensitive Device Based on Chemically Deposited Nanocrystalline Chalcogenide Thin Films with Tunable Opto-electrical properties

Slonopas

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Past several decades have driven modernization of technology and machinery. This modernization has pushed the limits of our technology and increased our dependence on the energy. Additional side-effect of this rapid growth has been an exponential increase in the generated heat of the modern machinery.In most cases this waste heat is simply released into the environment. Numerous research groups have pursued an idea of capturing and converting the waste heat. Thermoelectric, pyroelectrics, organic Rankine cycle (ORC), and several other methods have been proposed to capture and convert the waste heat into electricity. Presently, all methods, however, have low conversion efficiency and are not economically feasible.In this work we focused on a practical approach to convert mid-IR electromagnetic waves to electricity. It is based on inexpensive thin film technology utilizing a junction between a narrow bandgap lead salt and wide bandgap chalcogenide film.Lead sulfide (PbS) was chosen as the narrow band semiconductors for the IR energy conversion.Lead salt photodetectors uniquely demonstrate high room temperature sensitivity to black-body sources in low temperatures and high internal quantum efficiency (QE). Further, the peculiar band structure of the lead salt allows for small Auger recombination and minimized losses.Due to its favorable opto-electrical properties and band compatibility with PbS, cadmium sulfide (CdS) was chosen as the wide bandgap semiconductor for this work.This work has shown that high quality nanocrystalline thin films of lead sulfide (PbS) and cadmium sulfide (CdS) can be grown cost efficiently using chemical bath deposition (CBD) method. Chemical bath seeding procedure was also developed in order to achieve reproducibility in the transport phenomena of the advanced materials. Seeding also allows these films to be deposited on any surface, including smooth flexible materials. Seeded kernels have shown to become the crystallization centers for both nanocrystalline films.Opto-electrical properties of the films were tuned in such a way to make the materials useful in a broad-band of the IR spectrum. We have shown that altering the parameters of the chemical bath deposition alters the grains hence changing the transport characteristics of the materials. We have shown that parameters of the chemical bath deposition can be optimized to produce highly sensitive thin films tuned to a specific range of the electromagnetic spectra.Novel transparent conducting oxide, Iridium (Ir) doped Titanium Oxide (TiO2) was developed in this work for the use in the optoelectronic device. Ir has been shown to be one of the most efficient dopants in thin films. Ir doped TiO2 has shown to have transport characteristics similar ii to those of the commonly used TCOs, with much higher optical transmittance in the infra-red range.Lastly devices were manufactured from the developed materials. TiO2/CdS/PbS/Au heterojunctions were manufactured and showed photoresponsivity. Device efficiencies were shown to depend on the...

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Infrared image sensors

Cited by 132 publications

References 0 publications

Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon

Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon

Polycrystalline lead selenide: the resurgence of an old infrared detector

Mid-IR Range Photosensitive Device Based on Chemically Deposited Nanocrystalline Chalcogenide Thin Films with Tunable Opto-electrical properties

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