Infrared and Raman spectroscopy of WO3 and CdWO4

Gabrusenoks, J.; Veispals, A.; Czarnowski, A. von; Meiwes‐Broer, Karl‐Heinz

doi:10.1016/s0013-4686(01)00364-4

Cited by 56 publications

(25 citation statements)

References 7 publications

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“…At 300°C the film is still amorphous, two bands at 550 and 1090 cm À1 , due to the glass substrate, appear and a broad peak typical of W 5+ @O vibration [8,9] arises at 450 cm À1 . At 400°C characteristic features of m-WO 3 at 803, 696 and 270 cm À1 [7,[9][10][11] may be recognized. Additional features at 949, 876, 760, 648, 325 and 230 cm À1 may be ascribed to hydrous tungsten trioxide WO 3 AE nH 2 O [10,12] or to an hexagonal h-WO 3 phase [2,12], as discussed later.…”

Section: Resultsmentioning

confidence: 95%

WO3 thin films by sol–gel for electrochromic applications

Cremonesi

Bersani

Lottici

et al. 2004

Journal of Non-Crystalline Solids

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Section: Resultsmentioning

confidence: 95%

WO3 thin films by sol–gel for electrochromic applications

Cremonesi

Bersani

Lottici

et al. 2004

Journal of Non-Crystalline Solids

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“…[54,55] Finally, curve c shows the Raman spectrum for the as-received commercial powder from which the slurry was prepared. In this case, thermal annealing does not induce any significant change in the spectrum, which is virtually identical to that of the annealed electrodeposited sample (curve b).…”

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confidence: 99%

Photoelectrochemical Behavior of Nanostructured WO₃ Thin‐Film Electrodes: The Oxidation of Formic Acid

et al. 2006

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Nanostructured tungsten trioxide thin-film electrodes are prepared on conducting glass substrates by either potentiostatic electrodeposition from aqueous solutions of peroxotungstic acid or direct deposition of WO3 slurries. Once treated thermally in air at 450 degrees C, the electrodes are found to be composed of monoclinic WO3 grains with a particle size around 30-40 nm. The photoelectrochemical behavior of these electrodes in 1 M HClO4 apparently reveals a low degree of electron-hole recombination. Upon addition of formic acid, the electrode showed the current multiplication phenomenon together with a shift of the photocurrent onset potential toward less positive values. Photoelectrochemical experiments devised on the basis of a kinetic model reported recently [I. Mora-Seró, T. Lana-Villarreal, J. Bisquert, A. Pitarch, R. Gómez, P. Salvador, J. Phys. Chem. B 2005, 109, 3371] showed that an interfacial mechanism of inelastic, direct hole transfer takes place in the photooxidation of formic acid. This behavior is attributed to the tendency of formic acid molecules to be specifically adsorbed on the WO3 nanoparticles, as evidenced by attenuated total reflection infrared spectroscopy.

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“…The band around 893 cm À1 has been assigned to the W 6+ =O stretching mode of terminal oxygen atoms possibly on the surfaces of the cluster or micro-void structures in the films. [43][44][45][46][47] New bands in the range of 1550-1750 cm À1 in the FTIR spectra of functionalized WO 3 thin films (curve 2-5) indicate the incorporation of the organic groups used in functionalization. The bands at 1040 cm À1 belong to the symmetrical vibrations of m(Si-O-Si).…”

Section: Resultsmentioning

confidence: 99%

Surface Functionalization of WO3 Thin Films with (3-Aminopropyl)triethoxysilane and Succinic Anhydride

Tran

et al. 2017

Journal of Elec Materi

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We report effects of oxygen plasma treatment on the surface functionalization of WO 3 thin films with (3-aminopropyl)triethoxysilane (APTES) and succinic anhydride (SA). X-ray diffraction and x-ray photoelectron spectroscopy results indicate the existence of the WO 3 phase. Fourier transform infrared spectroscopy measurement shows clear bands at 1040 cm À1 (Si-O-Si), 1556 cm À1 (N-H), 1655 cm À1 (C=O), 2937 cm À1 (C-H) and 3298 cm À1 (N-H), confirming the surface functionalization efficiency enhanced by prior treatment of oxygen plasma. It thus follows that the prior oxygen plasma treatment activates hydroxylation with more -OH groups on the WO 3 surface, which can pave a highly efficient way to the surface functionalization by APTES and SA.

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Infrared and Raman spectroscopy of WO3 and CdWO4

Cited by 56 publications

References 7 publications

WO3 thin films by sol–gel for electrochromic applications

WO3 thin films by sol–gel for electrochromic applications

Photoelectrochemical Behavior of Nanostructured WO₃ Thin‐Film Electrodes: The Oxidation of Formic Acid

Surface Functionalization of WO3 Thin Films with (3-Aminopropyl)triethoxysilane and Succinic Anhydride

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Infrared and Raman spectroscopy of WO3 and CdWO4

Cited by 56 publications

References 7 publications

WO3 thin films by sol–gel for electrochromic applications

WO3 thin films by sol–gel for electrochromic applications

Photoelectrochemical Behavior of Nanostructured WO3 Thin‐Film Electrodes: The Oxidation of Formic Acid

Surface Functionalization of WO3 Thin Films with (3-Aminopropyl)triethoxysilane and Succinic Anhydride

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Photoelectrochemical Behavior of Nanostructured WO₃ Thin‐Film Electrodes: The Oxidation of Formic Acid