Infrared and Raman Spectra of Single-Crystal α-Lead Azide

Iqbal, Zafar; Garrett, W. L.; Brown, Chris W.; Mitra, S. S.

doi:10.1063/1.1676785

Cited by 17 publications

(4 citation statements)

References 10 publications

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“…Therefore, we assigned this mode to NNN symmetric stretch mode. The fundamental ν 1 symmetric stretch vibrations are IR inactive in azides with linear symmetric azide ions, ,,, while they become IR active for these azides possess nonlinear or/and asymmetric azide ions. − Therefore, we infer that the azide ions become nonlinear and/or asymmetric starting from 11.7 GPa. This phenomenon was also found in IR study of RbN 3 …”

Section: Resultsmentioning

confidence: 90%

High-Pressure Raman and Infrared Spectroscopic Studies of Cesium Azide

Zhu

Jiang

et al. 2016

J. Phys. Chem. C

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In this work, we present the effects of high pressure on the structure and stability of cesium azide (CsN 3 ) with the pressure up to ∼30.0 GPa, as studied by Raman and IR spectroscopy. Three phase transitions of Phase II → III → IV → V were revealed at ∼0.5, ∼3.7, and ∼16.0 GPa. The abnormal softening behavior of T(E g ) mode reveals the shearing distortion during Phase II → III transition. Moreover, changes of lattice modes and splitting of the degenerate T(E g ) and R(E g ) modes in Phase III indicate the breaking of crystallographically equivalent condition of azide ions. Phase IV was found to possess the C2/m structure, and Phase V has a lower symmetry structure than other phases. The IR measurements show the evolution of the NNN bending modes and the IR-active behavior of the symmetric stretch ν 1 mode under pressure, which collectively reveal the rotation and bending of the azide ions upon compression. The azide ions groups were found to further bend under pressure, and the bent azide ions might enhance propensity of nitrogen polymerization.

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Section: Resultsmentioning

confidence: 90%

High-Pressure Raman and Infrared Spectroscopic Studies of Cesium Azide

Zhu

Jiang

et al. 2016

J. Phys. Chem. C

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“…The mode with weak intensity at 1374 cm –1 is assigned to the NNN symmetric stretch mode, labeled as ν sy temporarily, corresponding to the ν 1 ( A 1 g ) mode at 1375 cm –1 (11.9 GPa) in the Raman spectra. The ν sy mode presented as IR-active at this pressure due to the NNN becoming nonlinear/asymmetric upon compression, as is the fact in Ca(N 3 ) 2 , Ba(N 3 ) 2 , and Pb(N 3 ) 2 . − In the process of 10.8–14.9 GPa, the relative intensity of C I4 and C I5 is gradually changed accompanied by the overlap and cross of the ν 2 ( A 2 u ) and ν′ 2 ( E u ) modes, indicating the process of the phase transition (γ → δ). Further compression to 16.1 GPa resulted in the disappearance of C I2 and C I3 modes accompanied by the merging of C I4 and C I5 (Figure f).…”

Section: Results and Discussionmentioning

confidence: 81%

High-Pressure Studies of Rubidium Azide by Raman and Infrared Spectroscopies

et al. 2015

J. Phys. Chem. C

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We report the high-pressure studies of RbN 3 by Raman and IR spectral measurements at room temperature with the pressure up to 28.5 GPa and 30.2 GPa, respectively. All the fundamental vibrational modes were resolved by combination of experiment and calculation. Detailed spectroscopic analyses reveal two phase transitions at ~ 6.5 and ~16.0 GPa, respectively. Upon compression, the shearing distortion of the unit cell induced the displacive structural transition of phase α → γ.Further analyses of the mid-IR spectra indicate the evolution of N 3 − with the arrangement sequence of orthogonal → parallel → orthogonal during the phase transition of phase α → γ → δ. Additionally, the pressure-induced non-linear/asymmetric existence of N=N=N and the two crystallographically nonequivalent sites of N 3 − were observed in phase δ.

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“…The structure at 3300 cm-l has been identified l2 as due to fundamental combinations. Of particular interest is a comparison of these data with those obtained by Iqbal et al 14 for oriented single crystals of a-lead azide, Further studies as to the details of the finer structure of the broad ir peaks observed in the doped and undoped films are currently in progress. 18 …”

Section: A Optical Absorption Of Undoped Filmsmentioning

confidence: 90%

Photodecomposition and electronic structure of lead azide

Hall

Williams

1973

The Journal of Chemical Physics

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Photodecomposition, optical absorption, and conductivity measurements were performed on thin films of lead azide in order to determine interrelation between electronic structure and chemical instability. Both pure lead azide and thallium and bismuth doped films were investigated. The azide films are prepared by chemical conversion of evaporated metallic films by the vapor of hydrazoic acid and are found to consist of 11'm2 platelets which lie parallel to the substrate and are optically active. No effects of doping on the Fermi level are observed and we conclude that the dopants are self-compensated by native defects. The observed changes in ultra violet and infrared absorption during thermal or photodecomposition can be attributed to the formation of azide vacancies. Thallium doping results in changes in optical properties similar to those obtained on decomposition. The initial step in photodecomposition appears to be the creation of charge-transfer excitons.

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Infrared and Raman Spectra of Single-Crystal α-Lead Azide

Cited by 17 publications

References 10 publications

High-Pressure Raman and Infrared Spectroscopic Studies of Cesium Azide

High-Pressure Raman and Infrared Spectroscopic Studies of Cesium Azide

High-Pressure Studies of Rubidium Azide by Raman and Infrared Spectroscopies

Photodecomposition and electronic structure of lead azide

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