Infrared and Raman-scattering studies in single-crystalline GaN nanowires

Liu, Hsiang Lin; Chen, Chia Chun; Chia, Chih Ta; Yeh, Chen‐Hao; Chen, Chun Ho; Yu, M. Y.; Keller, S.; DenBaars, Steven P.

doi:10.1016/s0009-2614(01)00858-2

Cited by 153 publications

(59 citation statements)

References 21 publications

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“…Three main peaks centered at 531, 566, and 727 cm −1 are correlated with the first-order vibrational modes of A 1 (TO), E 2 (high), and A 1 (LO) for GaN-1 nanostructures, respectively. One extra peak seen at 260 cm −1 is attributed to the zone-boundary phonon activated by the surface disorders and finite-size effect [22]. Another peak at 420 cm −1 is attributed to the overtones of transverse acoustic phonons [23,24].…”

Section: Resultsmentioning

confidence: 97%

Ga-vacancy-induced room-temperature ferromagnetic and adjusted-band-gap behaviors in GaN nanoparticles

et al. 2013

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Room-temperature ferromagnetism has been found in Ga-deficient GaN grown using the direct reaction of Ga 2 O 3 powder with NH 3 gas. The observed magnetism in GaN induced by Ga vacancies is investigated both experimentally and theoretically. First-principles calculations reveal that the spontaneous spin polarization is created by the 3.0 μ B local moment for GaN and magnetism originates from the polarization of the unpaired 2 p electrons of N surrounding the Ga vacancy. At the same time, the band gap can be also adjusted by changing the Ga-vacancy concentration.

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Section: Resultsmentioning

confidence: 97%

Ga-vacancy-induced room-temperature ferromagnetic and adjusted-band-gap behaviors in GaN nanoparticles

et al. 2013

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“…Thanks to the excellent characteristics of wide band-gap, strong atomic bonding and high electronic mobility as well as high optical efficiency, GaN-based semiconductor materials are quite attractive materials as a basis for the creation of reliable high-power or high-temperature electronic equipment and short wave-length optoelectronic devices [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. Following this trend, the investigations on various physical properties of nitride semiconductor low-dimensional quantum structures, such as quasi-2-dimensional (Q2D) quantum wells (QWs) [2][3][4][5][6][7][8], quasi-1-dimensional (Q1D) quantum wires (QWRs) [9][10][11][12][13][14][15][16] have become a hot topic.…”

Section: Introductionmentioning

confidence: 99%

“…Following this trend, the investigations on various physical properties of nitride semiconductor low-dimensional quantum structures, such as quasi-2-dimensional (Q2D) quantum wells (QWs) [2][3][4][5][6][7][8], quasi-1-dimensional (Q1D) quantum wires (QWRs) [9][10][11][12][13][14][15][16] have become a hot topic. Among these research attempts, the crystal lattice dynamical properties of GaN-based quantum structures have attracted special attention both from theoretical and experimental viewpoint [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. The driving force behind these efforts lies in the evident fact that lattice vibrations have an important effect on the optoelectronic and electronic properties of nitride low-dimensional quantum systems [6][7][8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

“…Among these research attempts, the crystal lattice dynamical properties of GaN-based quantum structures have attracted special attention both from theoretical and experimental viewpoint [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. The driving force behind these efforts lies in the evident fact that lattice vibrations have an important effect on the optoelectronic and electronic properties of nitride low-dimensional quantum systems [6][7][8][9][10][11][12][13]. In fact, the phenomena of phonon replicas in the emission spectra, the homogeneous broadening of excitonic line width and the relaxations of hot carriers to the fundamental band edge are directly related to the lattice vibration of nitride materials [14].…”

Section: Introductionmentioning

confidence: 99%

“…In fact, the phenomena of phonon replicas in the emission spectra, the homogeneous broadening of excitonic line width and the relaxations of hot carriers to the fundamental band edge are directly related to the lattice vibration of nitride materials [14]. Hence, lattice dynamical properties of nitride low-dimensional quantum structures, especially the Q2D QW and Q1D QWR structures have been intensively studied for the last two decades [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

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Polar interface optical phonon states and their dispersive properties of a wurtzite GaN quantum dot: quantum size effect

Zhang¹

2010

Condens. Matter Phys.

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Based on the macroscopic dielectric continuum model, the interface-optical-propagating (IO-PR) mixing phonon modes of a quasi-zero-dimensional (Q0D) wurtzite cylindrical quantum dot (QD) structure are derived and studied. The analytical phonon states of IO-PR mixing modes are given. It is found that there are two types of IO-PR mixing phonon modes, i.e. ρ-IO/z-PR mixing modes and the z-IO/ρ-PR mixing modes existing in Q0D wurtzite QDs. Each IO-PR mixing mode also has symmetrical and antisymmetrical forms. Via a standard procedure of field quantization, the Fröhlich Hamiltonians of electron-(IO-PR) mixing phonons interaction are obtained. The orthogonal relations of polarization eigenvectors for these IO-PR mixing modes are also displayed. Numerical calculations for a wurtzite GaN cylindrical QD are focused on the quantum size effect on the dispersive properties of IO-PR mixing modes. The results reveal that both the radial-direction size and the axial-direction size have great effect on the dispersive frequencies of the IO-PR mixing phonon modes. The limiting features of dispersive curves of these phonon modes are discussed in depth. The phonon modes "reducing" the behavior of wurtzite quantum confined structures have been explicitly observed in the systems. Moreover, the behaviors that the IO-PR mixing phonon modes in wurtzite Q0D QDs reduce to the IO modes and PR modes in wurtzite Q2D QW and Q1D QWR systems are profoundly analyzed both from the viewpoint of physics and mathematics. These results show that the present theories of polar mixing phonon modes in wurtzite cylindrical QDs are consistent with the phonon modes theories in wurtzite QWs and QWR systems. The analytical electron-phonon interaction Hamiltonians obtained here are useful in further analyzing the phonon effect on optoelectronic properties of wurtzite Q0D QD structures.

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Scanning Photoelectron Microscopy for the Characterization of Novel Nanomaterials

Chiou

Chia-Hao

2010

X‐Rays in Nanoscience

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Infrared and Raman-scattering studies in single-crystalline GaN nanowires

Cited by 153 publications

References 21 publications

Ga-vacancy-induced room-temperature ferromagnetic and adjusted-band-gap behaviors in GaN nanoparticles

Ga-vacancy-induced room-temperature ferromagnetic and adjusted-band-gap behaviors in GaN nanoparticles

Polar interface optical phonon states and their dispersive properties of a wurtzite GaN quantum dot: quantum size effect

Scanning Photoelectron Microscopy for the Characterization of Novel Nanomaterials

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