Infrared absorption study of rapid thermal oxidation and in situ steam generation of thin SiO2 films by gradient etching preparation

Abstract

Process sensing and metrology in gate oxide growth by rapid thermal chemical vapor deposition from SiH 4 and N 2 O

Synthesis of High Purity Silicon Nanoparticles in a Low Pressure Microwave Reactor

“…There are two possible explanations for this effect. First, it may originate from a confinement effect in ultrathin films (t Ͻ 5 nm), 26 and second, it may be due to an understoichiometric oxidation of silicon (SiO x , with x Ͻ 2). 27 Since the magnitude of the observed shifts is far larger than what can be expected from reducing the oxide layer thickness, 26 the red shifts are attributed to an understoichiometric oxidation.…”

“…First, it may originate from a confinement effect in ultrathin films (t Ͻ 5 nm), 26 and second, it may be due to an understoichiometric oxidation of silicon (SiO x , with x Ͻ 2). 27 Since the magnitude of the observed shifts is far larger than what can be expected from reducing the oxide layer thickness, 26 the red shifts are attributed to an understoichiometric oxidation. Finally, the bands at k ϭ 2142 cm Ϫ1 , k ϭ 873 cm Ϫ1 and k ϭ 663 cm Ϫ1 (labelled with solid circles) represent Si-H vibrations at the Si surface 28 and, thus, show that the particles are partially covered with hydrogen.…”

Abnormal Behavior of Longitudinal Optical Phonon in Silicon Dioxide Films on 4H–SiC Bulk Epitaxial Substrate Using Fourier Transform Infrared (FT-IR) Spectroscopy

“…7 Transverse optical (TO) and longitudinal optical (LO) phonons were observed at around 1072 and 1257 cm −1 , respectively, in thermally grown SiO 2 films on a Si wafer. 8 These phonons are associated with the asymmetrical stretching of O in the intertetrahedral Si–O–Si bridge. 9 The peak frequency of these phonons is known to shift depending on factors such as the electromagnetic phase shift, inhomogeneity, densification, porosity, and SiO 2 film thickness.…”

Characterization of silicon dioxide films on 4H-SiC Si (0001) face by cathodoluminescence spectroscopy and x-ray photoelectron spectroscopy

“…[2][3][4][5] The presence of interface traps in SiC MOS field-effect transistors (FETs) is attributed to (1) excess carbon, 4,6 (2) interface defects due to the presence of threefold coordinated O and C interstitial atoms, 4,6 and (3) point defects such as Si and O vacancies that extend into the SiC layer underneath the SiO 2 / SiC interface; the extending of the point defects was determined via a comparison with SiO 2 films grown on a Si substrate. 7,8 Although post-oxidation annealing (POA) by H 2 , 2 NO, 9,10 or N 2 O (Refs. 3 and 11-13) effectively increases the CM, few studies have focused on effect of POA on the microstructure of SiO 2 films on SiC wafers.…”