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Ridene, Saïd; Boujdaria, K.; Bouchriha, H.; Fishman, G.

doi:10.1103/physrevb.64.085329

Cited by 73 publications

(38 citation statements)

References 32 publications

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“…[33]. For Ξ ∆ u we find 11.4 (11.0) eV for Si(Ge), compared to the theoretical values of 9.16 (9.42) eV for Si(Ge) and the experimental value of 8.70 eV for Si, stated in [34].…”

Section: (Q)supporting

confidence: 47%

Band structure calculations of Si–Ge–Sn alloys: achieving direct band gap materials

Moontragoon¹,

Ikonić²,

Harrison³

2007

Semicond. Sci. Technol.

205

150

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Abstract. Alloys of silicon (Si), germanium (Ge) and tin (Sn) are continuously attracting research attention as possible direct band gap semiconductors with prospective applications in optoelectronics. The direct gap property may be brought about by the alloy composition alone or combined with the influence of strain, when an alloy layer is grown on a virtual substrate of different composition. In search for direct gap materials, the electronic structure of relaxed or strained Ge

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“…[33]. For Ξ ∆ u we find 11.4 (11.0) eV for Si(Ge), compared to the theoretical values of 9.16 (9.42) eV for Si(Ge) and the experimental value of 8.70 eV for Si, stated in [34].…”

Section: (Q)supporting

confidence: 47%

Band structure calculations of Si–Ge–Sn alloys: achieving direct band gap materials

Moontragoon¹,

Ikonić²,

Harrison³

2007

Semicond. Sci. Technol.

205

150

View full text Add to dashboard Cite

show abstract

“…Furthermore, with our k·p Hamiltonian at the L point and a 14×14 k·p Hamiltonian at the Γ point, we analyze the Elliott 38 and Yafet 33 mechanisms in these electron-phonon scatterings. 39 In all the cases above, our calculations with pseudo-potential method confirm our selection rules and analytical wave-vector dependence of scattering matrices. This paper is organized as follows.…”

Section: -20supporting

confidence: 65%

Spin-dependent intravalley and intervalley electron-phonon scatterings in germanium

et al. 2013

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We investigate the spin-dependent electron-phonon scatterings of the L and Γ valleys and the band structure near the conduction band minima in germanium. We first construct a 16 × 16 k · p Hamiltonian in the vicinity of the L point in germanium, which ensures the correctness of the band structure of the lowest three conduction bands and highest two valence bands. This Hamiltonian facilitates the analysis of the spin-related properties of the conduction electrons. We then demonstrate the phonon-induced electron scatterings of the L and Γ valleys, i.e., the intra-Γ/L valley, inter-Γ-L valley and inter-L-L valley scatterings in germanium. The selection rules and complete scattering matrices for these scatterings are calculated, where the scattering matrices for the intra-Γ valley scattering, inter-Γ-L valley scattering and the optical-phonon and the separated transverse-acoustic-and longitudinal-acoustic-phonon contributions to the intra-Γ valley scattering have not been reported in the literature. The coefficients in these scattering matrices are obtained via the pseudo-potential calculation, which also verifies our selection rules and wave-vector dependence. We further discuss the Elliott-Yafet mechanisms in these electron-phonon scatterings with the k·p eigenstates at the L and Γ valleys. Our investigation of these electron-phonon scatterings are essential for the study of the optical orientation of spin and hot-electron relaxation in germanium.

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“…The dotted lines in Fig. 2 represent the theoretically predicted position of these spectra, i.e., for an ideally rectangular QW profile [23][24][25][26], which results from several composition-related effects. The primary influence on the ground state transition energy shift is attributed to the As-induced band gap change [27].…”

Section: Resultsmentioning

confidence: 99%

Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers

et al. 2015

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The effect of interface intermixing in W-design GaSb/AlSb/InAs/Ga 0.665 In 0.335 As x Sb 1 − x /InAs/AlSb/GaSb quantum wells (QWs) has been investigated by means of optical spectroscopy supported by structural data and by band structure calculations. The fundamental optical transition has been detected at room temperature through photoluminescence and photoreflectance measurements and appeared to be blueshifted with increasing As content of the GaInAsSb layer, in contrast to the energy-gap-driven shifts calculated for an ideally rectangular QW profile. The arsenic incorporation into the hole-confining layer affects the material and optical structure also altering the InAs/GaInAsSb interfaces and their degree of intermixing. Based on the analysis of cross-sectional transmission electron microscopy images and energy-dispersive X-ray spectroscopy, we could deduce the composition distribution across the QW layers and hence simulate more realistic confinement potential profiles. For such smoothed interfaces that indicate As-enhanced intermixing, the energy level calculations have been able to reproduce the experimentally obtained trend.

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Infrared absorption inSi/Si1−xGex

Cited by 73 publications

References 32 publications

Band structure calculations of Si–Ge–Sn alloys: achieving direct band gap materials

Band structure calculations of Si–Ge–Sn alloys: achieving direct band gap materials

Spin-dependent intravalley and intervalley electron-phonon scatterings in germanium

Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers

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