Infrared Absorption Coefficient for Shallow Donors in a Quantum Well

Impurity bound states in a compensated quantum well

“…Colchesqui et al [4] have investigated the macroscopic effect of the compensation on the binding energy of an electron bound to a donor in an n-type quantum well using a semiclassical model which is valid in the low-concentration regime. Emmel and da Cunha Lima [5] have calculated the infrared absorption coefficients for intra-donor transitions inside a lightly doped and compensated quantum well of Ga 1−x Al x /As/GaAs assuming a random distribution of shallow impurities. These authors [6] have also examined the effect of compensation on the absorption coefficient for shallow donors in a quantum well by Monte Carlo simulation.…”