Infra-red imaging and EL2

Fillard, J.P.

doi:10.1051/rphysap:01988002305076500

Cited by 11 publications

(8 citation statements)

References 44 publications

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“…In this manner, the relation between the creation and annihilation of the electrons determines the breakdown threshold. [13] The applied voltage causing a transition from a non-self-sustaining discharge to a self-sustaining discharge has been known as the breakdown voltage. The breakdown is then determined by a rapid gas transition from a poor electrical conduction with high resistivity (about 10 14 Ω•m) to a relatively good conduction with lower resistivity.…”

Section: Background On Breakdownmentioning

confidence: 99%

“…[9,10] Gas discharge devices with semiconductor electrodes have usually been used to convert infrared (IR) signals into visible images. [11][12][13][14][15] In the above applications, the interactions of the materials, namely, semiconductors, metals, polymers and dielectrics with gas discharge, cause some differences in their ordinary features because of the surface modification. [16] It has also been known that any change in the emission of electron features of cathodes under the discharge may be undesirable and yield some spatio-temporal instabilities as functions of the system parameters.…”

Section: Introductionmentioning

confidence: 99%

“…[6,31] The discharge instabilities leading to current filamentation in the MGDD are dominated by the local negative feedback because of the voltage drop on the semiconductor electrode. [13,32] Since the ion concentration in the discharge gap is too small to create an important distortion on the electric field even at a high current density, a spatially homogeneous state of Townsend discharge is observed in the system for a wide range of p. [6,33] While the coherent current oscillations are obtained over the whole range of parameters and current in the case of metallic electrodes, the distance between the electrodes suppresses the oscillations and causes a dc mode in a certain range of current in the semiconductor electrode. Thus, when d is decreased, the range of current expands and the coherent oscillations may disappear.…”

Section: Introductionmentioning

confidence: 99%

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Exploration of the Townsend regime by discharge light emission in a gas discharge device

Kurt

2014

Chinese Phys. B

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The Townsend discharge mechanism has been explored in a planar microelectronic gas discharge device (MGDD) with different applied voltages U and interelectrode distance d under various pressures in air. The anode and the cathode of the MGDD are formed by a transparent SnO 2 covered glass and a GaAs semiconductor, respectively. In the experiments, the discharge is found to be unstable just below the breakdown voltage U b , whereas the discharge passes through a homogeneous stable Townsend mode beyond the breakdown voltage. The measurements are made by an electrical circuit and a CCD camera by recording the currents and light emission (LE) intensities. The intensity profiles, which are converted from the 3D light emission images along the semiconductor diameter, have been analysed for different system parameters. Different instantaneous conductivity σ t regimes are found below and beyond the Townsend region. These regimes govern the current and spatio-temporal LE stabilities in the plasma system. It has been proven that the stable LE region increases up to 550 Torr as a function of pressure for small d. If the active area of the semiconductor becomes larger and the interlectrode distance d becomes smaller, the stable LE region stays nearly constant with pressure.

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Section: Background On Breakdownmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Exploration of the Townsend regime by discharge light emission in a gas discharge device

Kurt

2014

Chinese Phys. B

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“…In ionization photographic systems [1], in IR image converters [2,3] and also in some types of lasers [4] the semiconducting cathode plays an important role; therefore, to study discharge with semiconducting cathodes acquires practical importance [5,6]. A gas discharge cell with a photosensitive semiconductor plate is the main element of image converters of the ionization-type [7].…”

Section: Introductionmentioning

confidence: 99%

Identification of the dynamics of plasma-induced damage in a CuInSe2 thin film by fractal processing

Kurt¹,

Salamov

2006

Cryst. Res. Technol.

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A planar ionization system for rapid visualization and recording the resistance inhomogeneity and photoconductivity distribution in a chalcopyrite-type semiconductor (CuInSe 2 ) copper-indium-diselenide film is studied. A part of the discharge energy is transferred to the electrodes of the system by the bombardment of the electrode surface due to an electron-ion flow. This process leads to the sputtering mechanism of the electrode surface material. It is shown that the plasma-induced damage (PID) in a CuInSe 2 thin film was primarily due to the effectiveness of sputtering and physico-chemical interactions in the discharge gap during the transition from Townsend to the glow type. At the same time a nondestructive method is suggested for the analysis of the dynamics of PID in the CuInSe 2 thin film by fractal processing in the planar ionization system. Some properties of the device have been evaluated, such as a relative change of the resistance inhomogeneity is determined by a relative change of discharge light emission (DLE) intensity when a current is passed through an ionization cell. For the quantitative analysis of the change in the dynamic feature of PID of CuInSe 2 thin films, fractal dimension analysis was used following the records of the DLE intensity. The quality of the film was analyzed using both the profile and spatial distributed DLE intensities data showing the surface inhomogeneity and damage in the thin film as function of time. Thus, by using fractal concept, the order of the surface damage and the quality of the CuInSe 2 as function of time can be assessed exactly and the size and location of the surface inhomogeneities in thin film to be ascertained.

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“…This view was generally accepted until the publication of the work of Fillard, [9][10][11] who carried out a comparative analysis of the infrared transmission pattern before and after the optical quenching and of the dislocation distribution patterns established by laser scanning microscopy. It was found that the EL2 centers if GaAs could be defects of atomic dimensions, which are located in the interior but which are concentrated mainly around dislocations occupying a region considerably greater than the dimensions of dislocations.…”

Section: Introductionmentioning

confidence: 99%

Fractal processing for an analysis of the quality and resistivity of large semiconductor plates

Kurt

Salamov²

2004

Cryst. Res. Technol.

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A nondestructive method is suggested for the analysis of the quality and resistivity inhomogeneity of semiconductor plates in an ionization system with a SI GaAs semiconductor plate. At the same time, a device for rapid visualization and recording the resistance inhomogeneity and photoconductivity distribution throughout the bulk material in high-resistivity and photosensitive semiconductor plates of large diameter (50-100 mm) is described. Semiconductor plates with the resistivity from 10 5 to 10 9 Ωcm can be analyzed in the proposed device. The possibilities of the device have been evaluated, i.e. a relative change of the resistance inhomogeneity is determined by a relative change of discharge light emission intensity when a current is passed through an ionization cell. For the quantitative analysis of quality and resistivity inhomogeneity of semiconductor plates, fractal dimension analysis was used following the records of the discharge light emission intensity. The quality of plates was analyzed using both the profile and spatial distributed light emission intensity data showing the internal inhomogeneity in the semiconductor plate. Thus, by using fractal concept, the surface quality of the high-resistivity semiconductor plate can be assessed exactly and the size and location of the internal inhomogeneities in the semiconductor plate to be ascertained.

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Infra-red imaging and EL2

Cited by 11 publications

References 44 publications

Exploration of the Townsend regime by discharge light emission in a gas discharge device

Exploration of the Townsend regime by discharge light emission in a gas discharge device

Identification of the dynamics of plasma-induced damage in a CuInSe2 thin film by fractal processing

Fractal processing for an analysis of the quality and resistivity of large semiconductor plates

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