Influential factors in low-temperature direct bonding of silicon dioxide

Shirahama, Ryouya; Duangchan, Sethavut; Koishikawa, Yusuke; Baba, Akiyoshi

doi:10.1109/3dic.2015.7334585

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“…1) bonding surface modified by hydroxyl groups and 2) root-mean-square surface roughness R q of less than 0.5 nm. 33,34) However, the direct bonding between NCD and Si is difficult owing to the inactive surface and the large surface roughness of the NCD surface. Therefore, we introduce SiO 2 as a bonding layer to overcome these issues.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of silicon-on-diamond substrate with an ultrathin SiO₂ bonding layer

Nagata

Shirahama

Duangchan

et al. 2018

Jpn. J. Appl. Phys.

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We proposed and demonstrated a sputter etching method to prepare both a flat surface (root-mean-square surface roughness of approximately 0.2–0.3 nm) and an ultrathin SiO2 bonding layer at an accuracy of approximately 5 nm in thickness to fabricate a silicon-on-diamond substrate (SOD). We also investigated a plasma activation method on a SiO2 surface using various gases. We found that O2 plasma activation is more suitable for the bonding between SiO2 and Si than N2 or Ar plasma activation. We speculate that the concentration of hydroxyl groups on the SiO2 surface was increased by O2 plasma activation. We fabricated the SOD substrate with an ultrathin (15 nm in thickness) SiO2 bonding layer using the sputter etching and O2 plasma activation methods.

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Section: Introductionmentioning

confidence: 99%