Influences of thermal annealing, the electrolyte pH, and current density on the interface state density distribution of anodic MOS structures

Sağlam, M.; Türüt, A.; Nuhoğlu, Çiğdem; Efeoǧlu, Hasan; Kılıçoğlu, Tahsin; Ebeoğlu, Mehmet Ali

doi:10.1007/s003390050537

Cited by 14 publications

(20 citation statements)

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“…[3][4][5][6][7][8][9][10] In the usual analyses of the experimental data on Schottky contacts, the barrier height is determined from the extrapolated I 0 . However, this is an apparent barrier height, q⌽ b , when an interfacial layer is present.…”

Section: Resultsmentioning

confidence: 99%

“…The HF C-V curve of sample CuG3 shows hysteresis behavior caused by an electronic charge injected into the oxide or an ionic-mobile charge within the oxide. 3 Using the difference between the barrier-height values of samples CuG1 (the control sample) and CuG3 (the MIS sample) in Eq. 6, we obtained a value of 10.90 for the electron-tunneling factor, a␦() 1/2 , and 0.265 eV -1/2 Å Ϫ1 for a ϭ (4/h)(2m*) 1/2 , where m* ϭ 3.82 ϫ 10 Ϫ13 eV-s 2 /m 2 and h ϭ 4.135 ϫ 10 Ϫ15 eV-s. Now, let us calculate the interfacial-layer thickness, ␦, for the MIS diode from HF C-V characteristics using the equation C ox ϭ ε i ε o A/␦, where C ox is the capacitance of the interfacial-oxide layer, and ε i Ϸ 4 21,22 and ε o are the permitivities of the interfacial layer and free space.…”

Section: Resultsmentioning

confidence: 99%

“…[1][2][3][4][5] The formation of high-quality Schottky barrier diodes (SBDs) with a low ideality factor using thin interfacial films is one of the essential prerequisites for devices. 1,[5][6][7][8][9][10][11][12][13][14] Furthermore, the metal-insulating semiconductor (MIS) structure is more desirable than the Schottky junction because the former generally has much higher barrier than the latter.…”

Section: Introductionmentioning

confidence: 99%

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The Cu/n-GaAs schottky barrier diodes prepared by anodization process

Bı̇ber

Türüt

2002

Journal of Elec Materi

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The metal-insulating semiconductor (MIS) Cu/n-GaAs diodes with thin anodic-insulating layer, which is formed by anodic oxidization on the n-GaAs substrate in aqueous 4C 2 H 6 O 2 ϩ 2H 2 O ϩ 0.1H 3 PO 4 electrolyte with pH ϭ 2.02; anodically untreated control Cu/n-GaAs diodes; and anodically treated Cu/nGaAs diodes (several steps of anodization in the same electrolyte followed by a dip in diluted aqueous HCl solution and a subsequent rinse in deionized water) have been prepared. The anodization has increased the barrier heights as well as the ideality factors. We have obtained barrier heights of approximately 0.68 eV, 0.90 eV, and 0.92 eV for the control sample, anodically treated sample, and MIS sample, respectively, adding the contribution caused by image-force effect only. Thus, the barrier height has been increased by at least 140 meV. Furthermore, we have calculated a mean tunneling-barrier height of ϭ 0.025 eV for the MIS Cu/n-GaAs Schottky barrier diode (SBD).

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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The Cu/n-GaAs schottky barrier diodes prepared by anodization process

Bı̇ber

Türüt

2002

Journal of Elec Materi

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“…[3][4][5][6] In the usual analyses of the experimental data on Schottky contacts, the barrier height is determined from the extrapolated I 0 . [3][4][5][6] In the usual analyses of the experimental data on Schottky contacts, the barrier height is determined from the extrapolated I 0 .…”

Section: Resultsmentioning

confidence: 99%

“…[1][2][3][4][5][6][7][8][9][10] In spite of this, the formation of highquality Schottky barrier diodes ͑SBDs͒ with a low ideality factor using thin interfacial films is one of the essential prerequisites for devices. The quality of devices with an interfacial ''oxide'' layer is not satisfactory because of the instability of the ''oxide'' layer in which the composition is still not well established, and the nature of these interfaces is still not completely understood.…”

Section: Introductionmentioning

confidence: 99%

Barrier height enhancement in the Au/n-GaAs Schottky diodes with anodization process

Bı̇ber¹,

Temırcı²,

Türüt³

2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We have fabricated Au/n-GaAs Schottky barrier diodes with different surface treatments. Prior to Au evaporation on the n-GaAs͑100͒, the first kind of samples has consisted of dip in the 5H 2 SO 4 ϩH 2 O 2 ϩH 2 O solution and then H 2 OϩHCl solution, followed by a rinse in de-ionized water ͑sample AuG1͒, the second kind of sample has consisted of several steps of anodization in aqueous 4C 2 H 6 O 2 ϩ2H 2 Oϩ0.1H 3 PO 4 electrolyte with pHϭ2.02 each followed by a dip in diluted aqueous HCl solution and a subsequent rinse in de-ionized water ͑sample AuG2͒, and the third kind of samples one anodization step only ͑MIS sample AuG3͒. We have found the lowest values of both the barrier heights and ideality factors for the reference sample AuG1. The anodization, on the other hand, has increased the barrier heights as well as the ideality factors. Furthermore, the barrier heights of approximately 0.80, 0.90, and 1.01 eV for the AuG1, AuG2, and AuG3 diodes, respectively, have been obtained adding the contribution due to image force effect.

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Low- and high-frequencyC-V characteristics of the contacts formed by sublimation of the nonpolymeric organic compound on p-type Si substrate

Temırcı

Çakar

Türüt³

et al. 2004

phys. stat. sol. (a)

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The Sn/pyronine‐B/p‐Si Schottky structures have been obtained by sublimation of the organic compound pyronine‐B onto the top of a p‐Si surface. Barrier height and ideality factor value of 0.79 eV and 1.13, respectively, for the device have been determined from the forward‐bias current–voltage (I–V) characteristics. The interface state density obtained from the forward bias high and low capacitance–voltage characteristics increases exponentially with bias between the midgap and the top of the valance band, from 2.15 × 1010 cm–2 eV–1 at (0.79–Ev) eV to 1.16 × 1012 cm–2 eV–1 at (0.53–Ev) eV. These values have been compared to those of the metal/Si structures in the literature, and it is seen that the presence of the nonreactive organic materials at the inorganic semiconductor and metal interface may obstruct the generation of the interface states at the semiconductor surface that strongly influence the Schottky barrier formation. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Influences of thermal annealing, the electrolyte pH, and current density on the interface state density distribution of anodic MOS structures

Cited by 14 publications

References 1 publication

The Cu/n-GaAs schottky barrier diodes prepared by anodization process

The Cu/n-GaAs schottky barrier diodes prepared by anodization process

Barrier height enhancement in the Au/n-GaAs Schottky diodes with anodization process

Low- and high-frequencyC-V characteristics of the contacts formed by sublimation of the nonpolymeric organic compound on p-type Si substrate

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