Influences of thermal annealing and indium content on mechanical stresses and optoelectronic characteristics of light emitter diodes

Chen, Tei Chen; Lee, Yuh Ju; Wu, Hsiang Chi; Ho, Chang Hsien

doi:10.1080/02533839.2008.9671382

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Cited by 3 publications

References 23 publications

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A comparative study of AlGaN and BAlGaN based ultraviolet quantum well-based light emitting diodes

Dhivyasri,

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Ajayan

et al. 2024

Opt Quant Electron

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A comparative study of AlGaN and BAlGaN based ultraviolet quantum well-based light emitting diodes

Dhivyasri,

Manikandan,

Ajayan

et al. 2024

Opt Quant Electron

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Counterbalancing effects of bowing in gallium nitride templates by epitaxial growth on pre-strained sapphire substrates

Lee,

Kang,

et al. 2024

Ceramics International

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Impact of boron in ultraviolet quantum well-based light emitting diodes

Dhivyasri,

Manikandan,

Ajayan

et al. 2023

Preprint

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The ByAlxGa1-x–yN system validates promise as a suitable option for fabricating opto-electronic devices like Light-Emitting-Diodes (LEDs) & laser diodes. This study conducts a comparative analysis between two types of LEDs: one with a single quantum well (SQW) composed of AlGaN and another with BAlGaN, containing 1% boron, 22% aluminum, and a 3 nm thickness. These LEDs are designed as AlGaN-based Quantum Well (LED1) and BAlGaN-based Quantum well devices (LED2). Technology Computer-Aided Design (TCAD) Silvaco physical simulator is used to perform simulations and comparisons in terms of both optical and electrical characteristics. The simulations encompass the anode current with respect to anode voltage, luminous power and wall-plug efficiency relative to injection current, and power spectral density concerning wavelength. Remarkably, even with a mere 1% boron content within the quantum well, the LED's performance displays a 2.3% enhancement in power spectral density and a 10% boost in wall-plug efficiency.

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Influences of thermal annealing and indium content on mechanical stresses and optoelectronic characteristics of light emitter diodes

Cited by 3 publications

References 23 publications

A comparative study of AlGaN and BAlGaN based ultraviolet quantum well-based light emitting diodes

A comparative study of AlGaN and BAlGaN based ultraviolet quantum well-based light emitting diodes

Counterbalancing effects of bowing in gallium nitride templates by epitaxial growth on pre-strained sapphire substrates

Impact of boron in ultraviolet quantum well-based light emitting diodes

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