Influences of preparation methods on bipolar switching properties in copper nitride films

Zhou, Qianfei; Lu, Qian; Zhou, Yong‐Ning; Yang, Yin; Du, Xiaoyu; Zhang, Xin; Wu, Xiaojing

doi:10.1016/j.surfcoat.2012.08.028

Cited by 12 publications

(5 citation statements)

References 22 publications

(24 reference statements)

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“…Hence the use of copper nitride in write-once memory devices [23,24,25,26,27], as a seed layer for electrodeposition [28] and in optical lithography for fabrication of metal links [29,30] was proposed. At the same time, bulk material is stable at room temperature, but decomposes at 300-450 • C. Other possible applications of Cu 3 N are related to spintronics [31,32], electrocatalysis [33], solar energy conversion [19,34], resistive switching memories [35,36] and inorganic-organic electronics [37].…”

Section: Introductionmentioning

confidence: 99%

Thermal disorder and correlation effects in anti-perovskite-type copper nitride

et al. 2017

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Reverse Monte Carlo simulations coupled with evolutionary algorithm were employed for the analysis of the temperature dependent (10-300 K) Cu K-edge extended X-ray absorption fine structure (EXAFS) spectra of polycrystalline copper nitride (Cu 3 N) with the goal to extract information on the thermal disorder and interatomic correlations in antiperovskite-type crystal lattice. The obtained results are discussed in comparison with metallic copper and perovskite-type rhenium trioxide. The analysis of EXAFS spectra suggests that the anisotropy of copper atom vibrations is significantly enhanced upon increasing temperature, leading to pronounced tilting motion of NCu 6 octahedra. Strong correlation in the motion of atoms was found along-N-Cu-N-atomic chains but it reduces rapidly with an increase of interatomic distance. Finally, anticorrelated motion of neighboring Cu atoms occurs along Cu-Cu bonds and is consistent with breathing-type motion of NCu 6 octahedra.

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Section: Introductionmentioning

confidence: 99%

Thermal disorder and correlation effects in anti-perovskite-type copper nitride

et al. 2017

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“…Second, a very small amount of Cu atoms is deposited directly on the substrate before it reacts with nitrogen in the vacuum chamber. In addition, other phases such as Cu 4 N may exist in the films [ 36 ], causing it to deviate from the stoichiometric ratio of 3:1. The corresponding EDS elemental mapping of the surface of the Cu 3 N films is shown in Figure 2 b.…”

Section: Resultsmentioning

confidence: 99%

Preparation of Copper Nitride Films with Superior Photocatalytic Activity through Magnetron Sputtering

et al. 2020

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TiO2 possesses a wide forbidden band of about 3.2 eV, which severely limits its visible light absorption efficiency. In this work, copper nitride (Cu3N) films were prepared by magnetron sputtering at different gas flow ratios. The structure of the films was tested by scanning electron microscope, X-ray diffractometer, and X-ray photoelectron spectroscope. Optical properties were investigated by UV-vis spectrophotometer and fluorescence spectrometer. Results show that the Cu3N crystal possesses a typical anti-ReO3 crystal structure, and the ratio of nitrogen and Cu atoms of the Cu3N films was adjusted by changing the gas flow ratio. The Cu3N films possess an optical band gap of about 2.0 eV and energy gap of about 2.5 eV and exhibit excellent photocatalytic activity for degrading methyl orange (degradation ratio of 99.5% in 30 min). The photocatalytic activity of Cu3N mainly originates from vacancies in the crystal and Cu self-doping. This work provides a route to broaden the forbidden band width of photocatalytic materials and increase their photoresponse range.

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“…TaN and TiN) electrodes that are generally applied in CMOS for commercial circuits [29]. Furthermore, nitridebased materials, such as AlN, Si 3 N 4 , NiN, and CoN, were reported exhibiting excellent resistive switching properties [30][31][32][33]. Among those nitride-based materials, aluminum nitride (AlN) with a wide band gap (approximately 6.2 eV) has attractive characteristics, including high thermal conductivity, high dielectric constant and good insulating properties [34][35][36].…”

Section: Introductionmentioning

confidence: 99%

An electronic synapse device based on aluminum nitride memristor for neuromorphic computing application

Guo

Zhang

et al. 2020

J. Phys. D: Appl. Phys.

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Brain-inspired computing is believed to have a better performance compared with the conventional von Neumann computing. The synaptic electronic device is the most important component of a neuromorphic circuit. In this study, we present an aluminum nitride (AlN) based memristor as the synaptic weight element in a functional neural network for handwritten digit recognition. Reliable and stable resistive switching behaviors were successfully demonstrated in the AlN based memristor. Moreover, it also possesses excellent features for neuromorphic applications such as long retention (>104 s), and multi-level storage. Continuous and smooth gradual set and reset switching transition can be modulated by applying appropriate compliance current limits and reset stop voltages. We particularly examined long-term potentiation and long-term depression and improved the linearity by optimizing pulse response conditions. Finally, the symmetric and linear synaptic behaviors which can be utilized in a neural network simulation are obtained. Simulations using the MNIST handwritten recognition data set prove that the AlN based memristor can operate with an online learning accuracy of 95%. Our work suggests AlN based memristor has potential for using as an electronic synapse in future neuromorphic systems.

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Influences of preparation methods on bipolar switching properties in copper nitride films

Cited by 12 publications

References 22 publications

Thermal disorder and correlation effects in anti-perovskite-type copper nitride

Thermal disorder and correlation effects in anti-perovskite-type copper nitride

Preparation of Copper Nitride Films with Superior Photocatalytic Activity through Magnetron Sputtering

An electronic synapse device based on aluminum nitride memristor for neuromorphic computing application

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