Influences of Organic Additive Molecular Weight in Colloidal-Silica-Based Slurry on Final Polishing Characteristics of Silicon Wafer

Moon, Byeong-Sam; Hwang, Hee-Sub; Park, Jea‐Gun

doi:10.1149/2.032202jes

Cited by 6 publications

(2 citation statements)

References 21 publications

(24 reference statements)

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“…Hydroxyethyl cellulose (HEC) is usually preferred as a hydrophilizing agent and many studies exploring the effect of HEC on wafer properties have been reported. [3][4][5][6][7][8] However, the hydrophilic properties imparted on the wafer by HEC during the polishing process have not been well documented.…”

mentioning

confidence: 99%

Effects of Hydroxyethyl Cellulose and Colloidal Silica Abrasive on the Hydrophilicity of Polished Si Wafer Surfaces

Tsuchiya

Mori²,

Kawaguchi

2017

ECS J. Solid State Sci. Technol.

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Final polishing processes are important to produce a clean surface in Si semiconductor wafers. Final polishing is carried out using a slurry that typically comprises colloidal silica, alkaline and a water-soluble polymer. Hydroxyethyl cellulose (HEC) has been widely used as a water-soluble polymer to impart hydrophilic properties to the polished wafer surface in order to reduce defects. In this study, we examined the effects of HEC concentration on the hydrophilicity of the polished wafer surface. We show correlations between the free HEC concentration in slurry liquid phase, friction during polishing, and hydrophilicity of the polished wafer surface. Furthermore, we show that the residual silica abrasive on the wafer enhances its hydrophilicity. These results show that HEC in the slurry not only acts as a hydrophilizing agent but also as an adsorptive medium between the wafer and silica. Silica has a highly hydrophilic surface owing to the presence of Si-O− groups on its surface. Therefore, a highly hydrophilic surface of polished wafer is achieved by adsorptive HEC as well as silica adsorbed on the wafer, bound by HEC. This mechanism is useful to develop new final polishing slurries to produce ultra-clean Si wafers.

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mentioning

confidence: 99%

Effects of Hydroxyethyl Cellulose and Colloidal Silica Abrasive on the Hydrophilicity of Polished Si Wafer Surfaces

Tsuchiya

Mori²,

Kawaguchi

2017

ECS J. Solid State Sci. Technol.

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“…The mechanism of CMP is based on (i) the chemical reaction between the chemicals in the slurry (i.e., dispersant, titrant, polishing rate accelerator or inhibitor, etc.) and the film surface being polished, (ii) the degree of adsorption of the slurry on the film surface being polished, (iii) the mechanical rubbing between the charged abrasives and the chemically reacted film surface being polished, and (iv) the coming in- or out-charge abrasives and CMP debris produced during CMP, as governed by Stoke’s law [ 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 ]. Thus, the metrics of CMP performance (i.e., film polishing rate, film polishing rate selectivity, remaining abrasives and debris, CMP-induced scratches, dishing, and erosion) are principally determined by the CMP mechanism, including (i)–(iv) described above.…”

Section: Resultsmentioning

confidence: 99%

Silicon Wafer CMP Slurry Using a Hydrolysis Reaction Accelerator with an Amine Functional Group Remarkably Enhances Polishing Rate

et al. 2022

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Recently, as an alternative solution for overcoming the scaling-down limitations of logic devices with design length of less than 3 nm and enhancing DRAM operation performance, 3D heterogeneous packaging technology has been intensively researched, essentially requiring Si wafer polishing at a very high Si polishing rate (500 nm/min) by accelerating the degree of the hydrolysis reaction (i.e., Si-O-H) on the polished Si wafer surface during CMP. Unlike conventional hydrolysis reaction accelerators (i.e., sodium hydroxide and potassium hydroxide), a novel hydrolysis reaction accelerator with amine functional groups (i.e., 552.8 nm/min for ethylenediamine) surprisingly presented an Si wafer polishing rate >3 times higher than that of conventional hydrolysis reaction accelerators (177.1 nm/min for sodium hydroxide). This remarkable enhancement of the Si wafer polishing rate for ethylenediamine was principally the result of (i) the increased hydrolysis reaction, (ii) the enhanced degree of adsorption of the CMP slurry on the polished Si wafer surface during CMP, and (iii) the decreased electrostatic repulsive force between colloidal silica abrasives and the Si wafer surface. A higher ethylenediamine concentration in the Si wafer CMP slurry led to a higher extent of hydrolysis reaction and degree of adsorption for the slurry and a lower electrostatic repulsive force; thus, a higher ethylenediamine concentration resulted in a higher Si wafer polishing rate. With the aim of achieving further improvements to the Si wafer polishing rates using Si wafer CMP slurry including ethylenediamine, the Si wafer polishing rate increased remarkably and root-squarely with the increasing ethylenediamine concentration.

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Effects of Polyvinyl Alcohol on Silicon Chemical Mechanical Polishing

Lei,

Wang,

Wang

2024

2024 Conference of Science and Technology for Integrated Circuits (CSTIC)

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Influences of Organic Additive Molecular Weight in Colloidal-Silica-Based Slurry on Final Polishing Characteristics of Silicon Wafer

Cited by 6 publications

References 21 publications

Effects of Hydroxyethyl Cellulose and Colloidal Silica Abrasive on the Hydrophilicity of Polished Si Wafer Surfaces

Effects of Hydroxyethyl Cellulose and Colloidal Silica Abrasive on the Hydrophilicity of Polished Si Wafer Surfaces

Silicon Wafer CMP Slurry Using a Hydrolysis Reaction Accelerator with an Amine Functional Group Remarkably Enhances Polishing Rate

Effects of Polyvinyl Alcohol on Silicon Chemical Mechanical Polishing

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