Abstract:In this work, the thermal evaporation method was adopted to prepare Nd-doped Mg 2 Si semiconductor thin films on n-Si(111) substrate. The structure, morphology and optical properties of these Mg 2 Si thin films doped with Nd were studied by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and Raman spectroscopy (RAMAN). The XRD results showed that Nd dopant led to weakened Mg 2 Si diffraction peaks and bigger lattice constants. The scanning electron microscopy results indicated decr… Show more
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