Abstract:Aluminum nitride (AlN) films with h<100> crystalline orientation are fabricated on p-Si (100) substrates at room temperature by pulsed laser deposition. The effects of laser energy density and annealing on the quality of the films are studied byx-ray diffraction, Fourier transform infrared spectroscopy and scanning electron microscopy. The crystalline quality of AlN films is improved considerably by increasing the laser energy density while there is increased number of farraginous particles on the surface. The… Show more
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