2016
DOI: 10.1007/s00339-016-9917-x
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Influences of indium doping and annealing on microstructure and optical properties of cadmium oxide thin films

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Cited by 10 publications
(3 citation statements)
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“…a decreased energy penalty for formation of oxygen vacancies. 44 This rationale follows for first row transition metal perovskite chemistries such as AMnO3 47,48 and ANiO3, [49][50][51] where experimental and theoretical work has correlated an increase in oxygen vacancy concentration in NdNiO3 and SmNiO3 epitaxial thin films and LaNiO3-δ polycrystalline films 52 with increasing biaxial tensile strain. [49][50][51] Further, the strain response of vacancy formation energy in perovskites can be quantified as a quadratic function of strain, with terms contributed by both the changes in volume and elastic constants associated with the creation of vacancies, 53 linking the structural effects of strain with chemical ionic properties in perovskite oxides.…”
Section: Bulk Defect Energeticsmentioning
confidence: 99%
“…a decreased energy penalty for formation of oxygen vacancies. 44 This rationale follows for first row transition metal perovskite chemistries such as AMnO3 47,48 and ANiO3, [49][50][51] where experimental and theoretical work has correlated an increase in oxygen vacancy concentration in NdNiO3 and SmNiO3 epitaxial thin films and LaNiO3-δ polycrystalline films 52 with increasing biaxial tensile strain. [49][50][51] Further, the strain response of vacancy formation energy in perovskites can be quantified as a quadratic function of strain, with terms contributed by both the changes in volume and elastic constants associated with the creation of vacancies, 53 linking the structural effects of strain with chemical ionic properties in perovskite oxides.…”
Section: Bulk Defect Energeticsmentioning
confidence: 99%
“…The peaks around 444.6 and 452.1 eV correspond to the In element. The chemical shifts of In 3d indicate that the In element is doped into the CdO lattice by replacing the Cd atoms . The features of the O 1s spectrum of ICO NPs with the In 3+ doping contents of 0.125, 0.075, and 0 are shown in Figure D–F, respectively.…”
Section: Resultsmentioning
confidence: 96%
“…Saydam iletken oksit malzemeler, çeşitli teknolojik uygulamalardaki kullanım imkânları nedeniyle pek çok araştırmacı tarafından yoğun olarak incelenmiştir [1][2][3]. Bu malzemeler arasında Kadmiyum oksit (CdO) bir n-tipi yarıiletken olup oda sıcaklığında yaklaşık ∼2.2 eV direkt bant aralık değerine sahiptir [4].…”
Section: Introductionunclassified