2020
DOI: 10.1007/s10854-020-04035-w
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Influences of different barrier films on microstructures and electrical properties of Bi2Te3-based joints

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Cited by 9 publications
(7 citation statements)
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“…Similarly, the figure of merit, zT , of the material is also modified such that ZT Device = zT Material · L /( L + 2ρ c · σ), where L and σ are the length and the electrical conductivity of the thermoelectric leg, respectively, and ρ c is the electrical contact resistivity. Contributing to lower η values are such items as severe interface elemental diffusion or reaction and mismatch in work functions (WF) or in the thermal expansion coefficients (CTE). Selecting alloy electrodes or adding barrier materials that can effectively inhibit the diffusion of interface elements or reduce the degree of mismatch for CTE and WF are currently utilized in optimization methods. , …”
Section: Introductionmentioning
confidence: 99%
“…Similarly, the figure of merit, zT , of the material is also modified such that ZT Device = zT Material · L /( L + 2ρ c · σ), where L and σ are the length and the electrical conductivity of the thermoelectric leg, respectively, and ρ c is the electrical contact resistivity. Contributing to lower η values are such items as severe interface elemental diffusion or reaction and mismatch in work functions (WF) or in the thermal expansion coefficients (CTE). Selecting alloy electrodes or adding barrier materials that can effectively inhibit the diffusion of interface elements or reduce the degree of mismatch for CTE and WF are currently utilized in optimization methods. , …”
Section: Introductionmentioning
confidence: 99%
“…A Ni-coated Bi 2 Te 3 specimen first sputtered a thin Au layer, and the interface between it and SAC305 exhibited lower electrical resistance, because the multiple Ni/Au intermediate layers efficiently inhibited growth of the IMC phase. 29 Different from Ni/Au barriers, for the Bi 2 Te 3 /Ti/ Au/Ag structure, the Ti layer bonded well with Bi 2 Te 3 , and the Au layer bonded well with an Ag electrode. After annealing at 250 °C for 200 h, there was no interdiffusion among them, as shown in Figure 6.…”
Section: Other Metal Diffusion-barrier Layersmentioning
confidence: 93%
“…This can be accompanied by the formation of solid solutions or intermetallic compounds at contact interface, which have a lower value of electrical conductivity and mechanical strength. Therefore, in a number of cases, it is necessary to organize a diffusion barrier between the substrate and the deposited contact layer [6,11,13,14,[30][31][32].…”
Section: Factors Determining the Adhesive Strength Of Film Coatingsmentioning
confidence: 99%