Influences of deposition and crystallization kinetics on the properties of silicon films deposited by low-pressure chemical vapour deposition from silane and disilane

Temple‐Boyer, Pierre; Rousset, Bernard; Scheid, E.

doi:10.1016/j.tsf.2010.07.037

Cited by 12 publications

(8 citation statements)

References 33 publications

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“…The n450nm value obtained for polycrystalline alumina was still lower than 1.78, evidenced for bulk monocrystalline alumina or sapphire [35]. As already shown for monocrystalline and polycrystalline silicon [34], this discrepancy might be associated to the presence of amorphous grain boundaries in the polycrystalline Al2O3 films (figure 8).…”

Section: Thermal Annealing Influencesmentioning

confidence: 85%

“…Wafer curvature measurements before and after PE-ALD film deposition were also performed by profilometry. Since the deposited films were very thin compared to the silicon substrate (thickness: ~ 500 m), their residual stress was finally calculated thanks to the Stoney's formula [33,34]. The accuracy of the whole technique was estimated at ± 5%.…”

Section: Methodsmentioning

confidence: 99%

“…As shown by Krautheim et al [39] and as seen previously (see section 3.2 above), this phenomenon should be related to film crystallization and therefore to the transition from amorphous to polycrystalline alumina. However, if a sigmoidal stress variation was expected (as shown for amorphous silicon crystallization [34]), a third phenomenon responsible for compressive stress was shown to interfere for temperature higher than 800°C. Thus, a stress decrease was finally evidenced for the highest temperatures.…”

Section: Residual Stressmentioning

confidence: 95%

“…Starting at 750°C from the as-deposited n450nm value around 1.64, a sigmoidal variation was evidenced to reach a final n450nm value around 1.72. Since such variations were already evidenced for ALD alumina films [37] and associated to crystallization phenomena for CVD silicon film [34], X-ray diffraction analysis was performed on the different samples.…”

Section: Thermal Annealing Influencesmentioning

confidence: 99%

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Study of aluminium oxide thin films deposited by plasma-enhanced atomic layer deposition from tri-methyl-aluminium and dioxygen precursors: Investigation of interfacial and structural properties

et al. 2018

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Section: Thermal Annealing Influencesmentioning

confidence: 85%

Section: Methodsmentioning

confidence: 99%

Section: Residual Stressmentioning

confidence: 95%

Section: Thermal Annealing Influencesmentioning

confidence: 99%

See 2 more Smart Citations

Study of aluminium oxide thin films deposited by plasma-enhanced atomic layer deposition from tri-methyl-aluminium and dioxygen precursors: Investigation of interfacial and structural properties

et al. 2018

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“…• C) with a high deposition rates [5]. Therefore, it is possible to separate the deposition and the crystallization phenomena.…”

Section: Introductionmentioning

confidence: 99%

Study of Silicon Nanocrystals Formation in Annealed Amorphous In Situ Nitrogen Doped Silicon Thin Films Obtained by Low Pressure Chemical Vapor Deposition

Bouridah¹,

Haoues²,

Beghoul³

et al. 2012

Acta Phys. Pol. A

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In this work, we investigate the formation of silicon nanocrystals in annealed low pressure chemical vapor deposition in situ nitrogen doped silicon thin films (SiN x ) obtained at low temperature (465 • C) by using a mixture of disilane (Si 2 H 6 ) and ammonia (NH 3 ). Results show that nitrogen content in films plays an important role in defining the obtained films morphology in terms of crystallites sizes and their distribution. Indeed, according to the nitrogen content introduced in films, the crystalline state of films varies from a submicron crystalline structure to a nanocrystalline structure. An average silicon nanocrystalline size of 10 nm was obtained for film with x = 0.07 nitrogen content, annealed under a temperature of 850• C during 2 h.

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Modeling and Control of SiNx Film Growth using the Kinetic Monte Carlo Method: Impact of Gas Flow Rate on Surface Roughness and Film Thickness

Bouhadiche¹,

Difellah

Bouridah

et al. 2023

Silicon

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Influences of deposition and crystallization kinetics on the properties of silicon films deposited by low-pressure chemical vapour deposition from silane and disilane

Cited by 12 publications

References 33 publications

Study of aluminium oxide thin films deposited by plasma-enhanced atomic layer deposition from tri-methyl-aluminium and dioxygen precursors: Investigation of interfacial and structural properties

Study of aluminium oxide thin films deposited by plasma-enhanced atomic layer deposition from tri-methyl-aluminium and dioxygen precursors: Investigation of interfacial and structural properties

Study of Silicon Nanocrystals Formation in Annealed Amorphous In Situ Nitrogen Doped Silicon Thin Films Obtained by Low Pressure Chemical Vapor Deposition

Modeling and Control of SiNx Film Growth using the Kinetic Monte Carlo Method: Impact of Gas Flow Rate on Surface Roughness and Film Thickness

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