Influences of acceptor dopants (Cu, Mg, Fe) on electrical and optical properties of Ba0.7Ca0.3TiO3 ceramics

Jaiban, Panupong; Wannasut, Pimpilai; Yimnirun, Rattikorn; Watcharapasorn, Anucha

doi:10.1016/j.materresbull.2019.110501

Cited by 23 publications

(7 citation statements)

References 27 publications

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“…[ 10 ] Jaiban et al showed the influence of acceptor dopants, copper, magnesium, and iron, on electrical and optical properties of Ba 0.7 Ca 0.3 TiO 3 ceramics and tuned the electrical properties under UV illumination. [ 12 ] Jaiban et al reported the tunable piezoelectric, dielectric, and ferroelectric properties using the Mg and Nb dopant in calcium barium titanate (BCT) ceramics. [ 13 ] Jaiban et al studied the simultaneous tuning of the dielectric property and photoinduced conductivity in ferroelectric lanthanum‐doped Ba 0.7 Ca 0.3 TiO 3 ceramic under UV illumination.…”

Section: Introductionmentioning

confidence: 99%

Enhancement in the Dielectric Property of Thick Lead Zirconium Titanate Films under UV Illumination

Vandana

Gupta

Tomar

et al. 2021

Physica Status Solidi (a)

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This work studies the effect on dielectric properties of lead zirconium titanate (Pb1.1Zr0.4Ti0.6O3 [PZT]) thick films under UV light illumination (wavelength =325 nm) for the realization of tunable capacitors. A modified sol–gel technique is utilized for the growth of polycrystalline PZT thick films on nickel substrate. The PZT films are deposited on Ni, and three different temperatures (450, 550, and 650 °C) are selected for annealing the samples in air atmosphere. Dielectric studies are performed on the optimized films, under varying intensities of UV radiation. Enhanced dielectric constant values are observed under UV illumination for the PZT films annealed at 550 and 650 °C due to generation of photocarriers and induced oxygen vacancies. An appreciable change in dielectric constant of about 75% at 1 MHz frequency is seen for the PZT film fabricated at higher annealing temperature (650 ºC) under UV illumination (intensity = 12 mW cm−2). The obtained results are encouraging for the utilization of thick PZT films in tunable capacitors.

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Section: Introductionmentioning

confidence: 99%

Enhancement in the Dielectric Property of Thick Lead Zirconium Titanate Films under UV Illumination

Vandana

Gupta

Tomar

et al. 2021

Physica Status Solidi (a)

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“…The doping with various metal ions such as Ca 2+ [13], Cu 2+ [14], Fe 3+ [14], Bi 3+ [11], Mg 2+ [14] and Mn 4+ [15] either in site A or/and B can improve the properties of BCZT ceramics. As mentioned, the addition of a dopant to (BCZT) ceramics can improve densification, dielectric and ferroelectric properties.…”

Section: Introductionmentioning

confidence: 99%

Effect of Mn doping on structure, the dielectric and electric properties of BCZT ceramics

Khmiri

Kriaa

Khemakhem

2021

Preprint

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The synthesis of (Ba 0.99 Ca 0.01 )(Zr 0.2 Ti 0.8 )O 3 (BCZT) and doped (Ba 0.99 Ca 0.01 )(Zr 0.2 Ti 0.8-x Mn x )O 3 (BCZT-xMn) ceramics was successfully carried out by the solid-state method. The doping effect is followed by X-ray powder diffraction, scanning electron microscopy (SEM), and dielectric and conductivity measurements. Indeed, X-ray diffraction measurements show the crystalline structure of ceramics. SEM images indicate the doping effect on the studied perovskite microstructure. The results indicate that during doping the maximum value of the temperature (Tm) of the dielectric constant varies slightly, and there will be a considerable decrease in permittivity, dielectric losses and conductivity. Manganese ions are well integrated in the perovskite while maintaining the solid solution.

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“…[14] The phase structure, microstructure, and electrical properties of modified BCTx have been extensively studied, such as BaZr 0.2 Ti 0.8 O 3 -(Ba 0.7 Ca 0.3 ) 0.985 La 0.01 TiO 3 [15] or (Cu, Mg, Fe)-doped BCT30. [16,17] It was reported that the solubility limit of Ca is around x ¼ 23 in tetragonal BCTx and a fully orthorhombic (O) phase exists at x > 90. [18,19] However, the BCT30 can form solid solutions with Ba(Ti 0.8 Zr 0.2 )O 3 and high piezoelectric properties as high as 620 pC N À1 were reported near a rhombohedral (R)-tetragonal (T) morphotropic phase boundary.…”

Section: Introductionmentioning

confidence: 99%

Improved Dielectric and Energy Storage Properties of Ba_0.8Ca_0.2TiO₃ Ceramics by Doping Ba(Mg_1/3Nb_2/3)O₃

Zhang

Fang

et al. 2021

Physica Status Solidi (a)

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Lead-free Ba 0.8 Ca 0.2 TiO 3 -xmol%Ba(Mg 1/3 Nb 2/3 )O 3 (abbreviated as BCT20-xBMN, x ¼ 0-8) ceramics are fabricated by a conventional solid-state reaction method. All BCT20-xBMN ceramics have pure perovskite phases which gradually change from tetragonal phase to cubic phase. The average grain size decreases significantly from %23 to %1.2 μm with the increase in BMN content. The T m corresponding to the dielectric maximum of BCT20-xBMN decreases with the increase in x, and the room temperature dielectric constant increases significantly. The recoverable energy storage density W rec and efficiency η% are enhanced to 0.17 J cm À3 and 81.3% for BCT20-6BMN due to the reduced remanent polarization by BMN doping. The W rec increases with increasing temperature and shows peak values near the T m . The η% of BCT20-6BMN and BCT20-7BMN has good temperature stability due to enhanced relaxor behavior.

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Influences of acceptor dopants (Cu, Mg, Fe) on electrical and optical properties of Ba0.7Ca0.3TiO3 ceramics

Cited by 23 publications

References 27 publications

Enhancement in the Dielectric Property of Thick Lead Zirconium Titanate Films under UV Illumination

Enhancement in the Dielectric Property of Thick Lead Zirconium Titanate Films under UV Illumination

Effect of Mn doping on structure, the dielectric and electric properties of BCZT ceramics

Improved Dielectric and Energy Storage Properties of Ba_0.8Ca_0.2TiO₃ Ceramics by Doping Ba(Mg_1/3Nb_2/3)O₃

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Influences of acceptor dopants (Cu, Mg, Fe) on electrical and optical properties of Ba0.7Ca0.3TiO3 ceramics

Cited by 23 publications

References 27 publications

Enhancement in the Dielectric Property of Thick Lead Zirconium Titanate Films under UV Illumination

Enhancement in the Dielectric Property of Thick Lead Zirconium Titanate Films under UV Illumination

Effect of Mn doping on structure, the dielectric and electric properties of BCZT ceramics

Improved Dielectric and Energy Storage Properties of Ba0.8Ca0.2TiO3 Ceramics by Doping Ba(Mg1/3Nb2/3)O3

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Improved Dielectric and Energy Storage Properties of Ba_0.8Ca_0.2TiO₃ Ceramics by Doping Ba(Mg_1/3Nb_2/3)O₃