2012
DOI: 10.1016/j.jeurceramsoc.2012.07.001
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Influence of Y2O3 addition on electrical properties of β-SiC ceramics sintered in nitrogen atmosphere

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Cited by 50 publications
(62 citation statements)
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“…2c) consisted of equiaxed grains and bright secondary phase because of the suppression of the β-α phase transformation of SiC during hot-pressing and larger amount of sintering additive (Y 2 O 3 ). The bright phase present along the boundaries and at triple point junctions of SiC grains in the 3Y-SiC is believed to be Y 2 O 3 phase, as identified in a previous work [29]. The average length and width of SiC grains in 0.2Y-SiC are 4.36 mm and 2.09 mm, respectively.…”
Section: Phase Analysis and Microstructural Characterizationsupporting
confidence: 69%
“…2c) consisted of equiaxed grains and bright secondary phase because of the suppression of the β-α phase transformation of SiC during hot-pressing and larger amount of sintering additive (Y 2 O 3 ). The bright phase present along the boundaries and at triple point junctions of SiC grains in the 3Y-SiC is believed to be Y 2 O 3 phase, as identified in a previous work [29]. The average length and width of SiC grains in 0.2Y-SiC are 4.36 mm and 2.09 mm, respectively.…”
Section: Phase Analysis and Microstructural Characterizationsupporting
confidence: 69%
“…In a previous study of highly conductive SiC ceramics, the carrier density of SiC ceramic sintered with 3.1% Y 2 O 3 (3.1Y–SiC) was 1.1 × 10 20 cm −3 , higher than that (5.2 × 10 19 cm −3 ) of the SY specimen. The difference in carrier density between the two SiC specimens sintered with a Y 2 O 3 additive is attributable to the difference in grain size because the nitrogen doping occurred during the growth of SiC grains via solution‐reprecipitation .…”
Section: Resultsmentioning
confidence: 82%
“…The difference in carrier density between the two SiC specimens sintered with a Y 2 O 3 additive is attributable to the difference in grain size because the nitrogen doping occurred during the growth of SiC grains via solution‐reprecipitation . The grain sizes of the 3.1Y–SiC and the SY specimens were 10 and 4.0 μm, respectively. The larger grain size of 3.1Y–SiC was due to the addition of 5 wt% in situ synthesized nano‐sized SiC and the higher sintering temperature (2050°C) for a longer holding time (6 h) at higher temperature than the present SY specimen (2000°C for 3 h).…”
Section: Resultsmentioning
confidence: 99%
“…Nitrogen (N) has been shown to be a good dopant for increasing the electrical conductivity in bulk SiC ceramics. Recently, highly conductive SiC ceramics were successfully fabricated by hot‐pressing SiC powders with yttria (Y 2 O 3 ) as a sintering additive . Bulk SiC specimens pressed at 40 MPa and 2050°C for 6 h in a nitrogen atmosphere exhibited electrical resistivity as low as 8 × 10 −3 Ω·cm at room temperature .…”
Section: Introductionmentioning
confidence: 99%
“…Recently, highly conductive SiC ceramics were successfully fabricated by hot‐pressing SiC powders with yttria (Y 2 O 3 ) as a sintering additive . Bulk SiC specimens pressed at 40 MPa and 2050°C for 6 h in a nitrogen atmosphere exhibited electrical resistivity as low as 8 × 10 −3 Ω·cm at room temperature . The sintered SiC specimens were found to contain a Y 2 O 3 phase segregated at the boundaries between SiC grains.…”
Section: Introductionmentioning
confidence: 99%