Abstract:Traditional silicon-based photodetectors are limited by the band gap of silicon, which results in a limited working wavelength range. In this report, due to the excellent properties of Indium Antimonide, the InSb/Si heterojunction photodetectors are fabricated. Under ambient temperature of 280K, as-prepared photodetectors show a specific detectivity of 9.31011 cm Hz1/2/W, responsivity of 54 mA/W, on/off ratio of 5104 under the laser irradia… Show more
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