Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics

Abstract

Articles you may be interested inBreakdown voltage in silicon carbide metal-oxide-semiconductor devices induced by ion beams AIP Conf. Proc. 1525, 654 (2013); 10.1063/1.4802408Comprehensive study on the deep depletion capacitance-voltage behavior for metal-oxide-semiconductor capacitor with ultrathin oxides Soft-breakdown-suppressed ultrathin atomic-layer-deposited silicon-nitride/SiO 2 stack gate dielectrics for advanced complementary metal-oxide-semiconductor technology Nitrogen profile effects on the growth rate of gate oxides grown on nitrogen-implanted silicon Atomic-layer-deposited silicon-nitride/SiO 2 stacked gate dielectrics for highly reliable pmetal-oxide-semiconductor field-effect transistors

Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures

“…Since these C-AFM analyses were carried out under ambient conditions, the measured SBH distribution can be affected by the presence of a water meniscus under the tip, which is known to cause a degradation of the lateral resolution. In this context, performing C-AFM under a high vacuum or within an environmental chamber has been shown to allow current mapping and spectroscopy with a greatly improved resolution [74].…”

Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition‐Grown Monolayer MoS2 by Conductive Atomic Force Microscopy

“…As a final remark, as CAFM analyses have been carried out under ambient conditions, the measured resistance values are affected by the presence of water or contaminations on MoS 2 surface. In this context, undertaking CAFM under high‐vacuum conditions, in addition to improving the lateral resolution by eliminating the water meniscus under the tip, can have the advantage of reducing the extrinsic scattering mechanisms, degrading the electrical properties of ML MoS 2 .…”

Nanoscaled Electrical Characterization

“…In the standard configuration C-AFM is usually done in air. The usage of vacuum, controlled humidity and inert atmosphere can improve the result by removing the thin layer of water adsorbed on the tip and sample (meniscus), and minimizing the potential surface oxidation [15]. Finally, the applied bias between tip and sample induces a high electric field under the tip that can affect the results.…”