Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and Germanium

Balslev, I.

doi:10.1103/physrev.143.636

Cited by 456 publications

(76 citation statements)

References 25 publications

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“…The functionality and reliability of coating-substrate systems, which are subjected to chemical effects, are strongly related to chemical stresses (or diffusion-induced stresses) of coatings. The diffusion-induced stress builds up in the coating on the substrate due to the chemical absorption, [2] adsorption [3] or mass change. [4] The evolvement of diffusion-induced stress in the coating results in the debondment of coating from the substrate.…”

Section: Introductionmentioning

confidence: 99%

Optimisation of interface roughness and coating thickness to maximise coating–substrate adhesion – a failure prediction and reliability assessment modelling

Nazir

Khan

Stokes

2015

Journal of Adhesion Science and Technology

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A mathematical model for failure prediction and reliability assessment of coating-substrate system is developed based on a multidisciplinary approach. Two models for diffusion and bending of bi-layer cantilever beam have been designed separately based on the concepts of material science and solid mechanics respectively. Then, these two models are integrated to design an equation for debonding driving force under mesomechanics concepts. Mesomechanics seeks to apply the concepts of solid mechanics to microstructural constituent of materials such as coatings. This research takes the concepts of mesomechanics to the next level in order to predict the performance and assess the reliability of coatings based on the measure of debonding driving force. The effects of two parameters i.e. interface roughness and coating thickness on debonding driving force have been analysed using finite difference method. Critical/ threshold value of debonding driving force is calculated which defines the point of failure of coating-substrate system and can be used for failure prediction and reliability assessment by defining three conditions of performance i.e. safe, critical and fail. Results reveal that debonding driving force decreases with an increase in interface roughness and coating thickness. However, this is subject to condition that the material properties of coating such as diffusivity should not increase and Young's modulus should not decrease with an increase in the interface roughness and coating thickness. The model is based on the observations recorded from experimentation. These experiments are performed to understand the behaviour of debonding driving force with the variation in interface roughness and coating thickness.

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Section: Introductionmentioning

confidence: 99%

Optimisation of interface roughness and coating thickness to maximise coating–substrate adhesion – a failure prediction and reliability assessment modelling

Nazir

Khan

Stokes

2015

Journal of Adhesion Science and Technology

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“…The results support the assumption of n i being stress independent. However, considering the vast body of prior work regarding stress-induced band structure changes, [16][17][18][19][20] it may also be the case that application of 0 Ͻ 11 induces compensating alterations to E F i and E n p such that E F i − E n p remains constant. Figure 3 also displays the estimated t / c versus C B behavior.…”

mentioning

confidence: 99%

“…[13][14][15] Furthermore, application of stress has been shown to cause significant alterations to the electronic structure of Si which, as per the GFLS model, may lead to synergistic dopant-and stressinfluenced SPEG kinetics. [16][17][18][19][20] Thus, the goal of this work is to study the combined roles of electrically active impurities and stress on SPEG kinetics.…”

mentioning

confidence: 99%

Dopant-stress synergy in Si solid-phase epitaxy

Rudawski

Jones

Gwilliam³

2008

Applied Physics Letters

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The influence of dopants on stressed solid-phase epitaxy of Si was studied in B-doped material up to B concentration of ϳ3.0ϫ 10 20 cm −3 and stress of 1.0Ϯ 0.1 GPa. As per the generalized Fermi level shifting model of growth enhancement in the presence of electrically active impurities, it is advanced that application of compressive stress may increase the energy difference between intrinsic Fermi and acceptor levels thus making dopant and stress effects synergistic in growth kinetics.

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“…Work done with wavelength modulation has usually been limited to a narrow region in the visible ~d near infrared. 12 •l3,l6,l7…”

Section: Disclaimermentioning

confidence: 99%

Wavelength modulation spectroscopy of semiconductors

Zucca

1971

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Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and Germanium

Cited by 456 publications

References 25 publications

Optimisation of interface roughness and coating thickness to maximise coating–substrate adhesion – a failure prediction and reliability assessment modelling

Optimisation of interface roughness and coating thickness to maximise coating–substrate adhesion – a failure prediction and reliability assessment modelling

Dopant-stress synergy in Si solid-phase epitaxy

Wavelength modulation spectroscopy of semiconductors

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