Influence of undercooling on solid/liquid interface morphology in semiconductors

Faceted dendrite growth of silicon from undercooled melt of Si–Ni alloy

“…Unfortunately, since there is not sufficient the data for /1 0 0S dendrites at high undercooling, quantitative comparison of the growth velocities of /2 1 1S and /1 0 0S dendrites is difficult. However, the results show that there is no direct correlation between growth velocity and growth morphology as reported in the literature [13][14][15][16].…”

“…Thereafter, intensive investigations on faceted dendrite growth of germanium, silicon, and their alloys have been revived for clarifying the transition of growth kinetics. In most experiments germanium or silicon was undercooled using the glass flux technique [4][5][6][7][8] or electromagnetic levitation technique [9][10][11][12][13][14][15][16] and the crystallographic morphology of solidified crystals was examined. The growth velocity of faceted dendrites was also measured for germanium, silicon, and their alloys [8][9][10][11][12][13][14][15][16].…”

“…The growth of a faceted dendrite changes from that of a twin dendrite with a /2 1 1S or /1 1 0S growth direction to that of a /1 0 0S twin-free dendrite with increasing undercooling. The transition from a twin to a twin-free dendrite is examined by microstructure observation of solidified samples [5][6][7][8][10][11][12][13], growth velocity measurement [8], and in situ observation of growing interface morphology [13][14][15][16], although the twin/ twin-free transition is sometimes described as the transition from lateral to continuous growth kinetics in a confusing manner. Battersby et al [8] measured the growth velocity of germanium and iron-doped germanium dendrites and reported that the undercooling dependency of growth velocity was different for twin and twin-free dendrites.…”

“…Battersby et al [8] measured the growth velocity of germanium and iron-doped germanium dendrites and reported that the undercooling dependency of growth velocity was different for twin and twin-free dendrites. However, the dendrite growth velocity for germanium, silicon, and their alloys was mostly reported to follow a power relationship with respect to undercooling in spite of the difference in growth kinetics [9][10][11][12][13][14][15][16]. Measured growth velocity was usually analyzed using an analytical dendrite model termed as a BCT [17] or LKT [18] model, although the model assumes interface characteristics that were different from those of faceted one.…”

Faceted Crystal Growth of Silicon from Undercooled Melt of Si-20 mass%Ni Alloy

“…2,3) Because of the rapid progress of silicon wafer production technology the interest in faceted dendrite growth was subsided for many years until Devaud and Turnbull 4) found a twin-free dendrite in the late 1980s. Thereafter, intensive investigations on faceted free dendrite growth of germanium, silicon, and their alloys were carried out using the glass flux technique [4][5][6][7][8] or electromagnetic levitation technique [9][10][11][12][13][14][15][16] and the crystallographic morphology of solidified crystals was examined. The growth velocity of faceted dendrites was also measured for germanium, silicon, and their alloys [8][9][10][11][12][13][14][15][16] and the measured growth velocity was analyzed using an analytical dendrite model termed such as the BCT model 17) or the LKT model.…”