Influence of ultrsonification in CdS thin film deposition in PCD technique

Soundeswaran, S.; Kumar, O. S. Sunish; Babu, S. Moorthy; Ramasamy, P.; Dhanasekaran, R.

doi:10.1016/j.matlet.2005.01.069

Cited by 17 publications

(4 citation statements)

References 21 publications

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“…For higher deposition temperature, the transmittance initially increases to 84% for the film deposited at 75 • C due to less light scattering by its smoothest surface. It decreases to about 68% at deposition temperatures above 80 • C, which may be due to either more light scattering on their rough surfaces [34,35] or the transition of the CdS phase from the cubic to hexagonal structure [4].…”

Section: Optical Propertiesmentioning

confidence: 97%

Characterization of chemical bath deposited CdS thin films at different deposition temperature

Liu¹,

Lai²,

Li³

et al. 2010

Journal of Alloys and Compounds

214

115

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Section: Optical Propertiesmentioning

confidence: 97%

Characterization of chemical bath deposited CdS thin films at different deposition temperature

Liu¹,

Lai²,

Li³

et al. 2010

Journal of Alloys and Compounds

214

115

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“…Electroless-photochemical deposition (PCD) has also been demonstrated for the preparation of metal sulfide thin films. Soundeswaran et al prepared CdS films on indium tin oxide (ITO) glass using 1-10 mM Cd(CH 3 COO) 2 and 100 mM Na 2 S 2 O 3 solution at pH = 3.0-4.5 under irradiation of ultraviolet (UV) light (100 mW/cm 2 ) [35]. For this reaction, S and electrons were initially formed by UV-excitation of S 2 O 3 2ions and reacted with Cd metal ions to form CdS.…”

Section: Introductionmentioning

confidence: 99%

Photoelectrochemical Hydrogen Evolution and CO2 Reduction over MoS2/Si and MoSe2/Si Nanostructures by Combined Photoelectrochemical Deposition and Rapid-Thermal Annealing Process

2019

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Diverse methods have been employed to synthesize MoS2 and MoSe2 catalyst systems. Herein, a combined photoelectrochemical (PEC) deposition and rapid-thermal annealing process has first been employed to fabricate MoS2 and MoSe2 thin films on Si substrates. The newly developed transition-metal dichalcogenides were characterized by scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. PEC hydrogen evolution reaction (HER) was demonstrated in an acidic condition to show a PEC catalytic performance order of MoOx/Si < MoS2/Si << MoSe2/Si under the visible light-on condition. The HER activity (4.5 mA/cm2 at −1.0 V vs Ag/AgCl) of MoSe2/Si was increased by 4.8× compared with that under the dark condition. For CO2 reduction, the PEC activity was observed to be in the order of MoS2/Si < MoOx/Si << MoSe2/Si under the visible light-on condition. The reduction activity (0.127 mA/cm2) of MoSe2/Si was increased by 9.3× compared with that under the dark condition. The combined electrochemical deposition and rapid-thermal annealing method could be a very useful method for fabricating a thin film state catalytic system perusing hydrogen production and CO2 energy conversion.

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“…Structural characterization of CdS films. With different deposition conditions, CdS film can grow with cubic and hexagonal phase [15][16][17][18] . For its excellent stability CdS films are widely used for the fabrication heterojunction solar cells with CdTe [19][20] .…”

Section: Resultsmentioning

confidence: 99%

Preparation and Characterization of Chemical Bath Deposited CdS Thin Films for Solar Cells

Xie

2013

MSF

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Chemical bath deposition of CdS thin film for solar cells was investigated in this study. CdS thin films were prepared by chemical-bath deposition (CBD) from a bath containing cadmium acetate, ammonium chloride, ammonium hydroxide and thiourea in aqueous solution on the glass substrate at certain bath temperature. The characterization of samples was conducted by using different methods such as scanning electron microscopy (SEM), X-ray diffraction (XRD) and ultraviolet spectrophotometry (UV). The crystal quality of CdS thin films was improved after CdCl2 thermal annealing at 400C. The results showed that chemical bath deposited CdS thin film was symmetrical and compact, but depositing rate was low. As a result, the best deposition conditions were summarized, such as the pH value was about 10.5, depositing time was 60 minutes.

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Influence of ultrsonification in CdS thin film deposition in PCD technique

Cited by 17 publications

References 21 publications

Characterization of chemical bath deposited CdS thin films at different deposition temperature

Characterization of chemical bath deposited CdS thin films at different deposition temperature

Photoelectrochemical Hydrogen Evolution and CO2 Reduction over MoS2/Si and MoSe2/Si Nanostructures by Combined Photoelectrochemical Deposition and Rapid-Thermal Annealing Process

Preparation and Characterization of Chemical Bath Deposited CdS Thin Films for Solar Cells

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