Influence of Ti doping on the performance of a ZnO-based photodetector

Effect of Lithium Doping on Microstructural and Optical Properties of ZnO Nanocrystalline Films Prepared by the Sol-Gel Method

“…The Zn 1−x Li x O nanocrystalline film is well crystallized in a wurtzite structure with a (002) preferred orientation in the direction parallel to the c-axis. The lattice constant of c-axis can be extracted to be 5.2069 Å. E. Nurfani et al have reported that Ti dopants change the dominant crystal orientation from (002) to (103), and also slightly extend the c-axis of the ZnO lattice parameter [20]. The results obtained in this work show that the doping of Li atoms does not cause obvious structure changes or lattice extensions.…”

“…Until now, several studies on ZnO doped with group III elements [13][14][15], transition metals [16,17], and other elements [18,19] have been explored. The dopants may not only change the dominant crystal orientation, but also play an important role in the enhancement of the photo-to-dark-current ratio via the doping-induced defect states [20]. However, it is difficult to achieve good and reproducible p-type ZnO due to low solubility of the dopant and high self-compensation [21].…”

Tuning Optoelectronic Properties Through In‐Plane Arrangement and Point Defects in ZnO Nanorods as Prepared by Room‐Temperature DC‐Unbalanced Magnetron Sputtering

“…The nonlinear I–V characteristic is observed for both samples, which indicates the Schottky characteristic. Reducing dark current is very important for photodetector application to obtain the photodetector with low noise and high sensitivity . I–V curve shows that ZnO nanorods have a lower dark current compared to that of the thin film.…”

“…Here, the extracted value of Schottky barrier height of ZnO nanorods in MSM configuration is 0.55 eV, while thin film shows the value of 0.49 eV. Moreover, the difference in Schottky barrier value on the both of samples might be related to contamination, morphology, interface states, and defect states . ZnO nanorods have a large surface‐to‐volume ratio compared to the thin film, which provides a higher concentration of V O defect.…”

Defect-induced excitonic recombination in TixZn1−xO thin films grown by DC-unbalanced magnetron sputtering

“…This nature is responsible for the tightly bound excitons in the ZnO system. 4) The excitonic properties of ZnO also play an important role in realizing future optoelectronic devices, such as high-sensitivity ultraviolet photodetectors, 5,6) light-emitting diodes, 7) and solar cells. 8) The development of these potential applications has been obstructed by several problems in the control of the ZnO surface and subsurface defects.…”