Influence of thickness on nanomechanical behavior of Black Diamond™ low dielectric thin films for interconnect and packaging applications

Sekhar, Vasarla Nagendra; Chai, Tai Chong; Balakumar, S.; Shen, Lu; Sinha, Sujeet K.; Tay, A.A.O.; Yoon, Seung Wook

doi:10.1007/s10854-008-9610-8

Cited by 12 publications

(6 citation statements)

References 26 publications

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“…This observation is in accordance with the reported data. [ 14,16,68 ] Figure 2d magnifies the pop‐in feature shown in Figure 1b.…”

Section: Resultsmentioning

confidence: 91%

“…These images show spalling of the SiOCH film, as reported in the literature. [ 64,68,69 ] It can also be seen that the SiOCH material at the indent center remained trapped by the indenter apex (indicated on Figure 2i). Finally, the underlying Si substrate remained in its elastic domain throughout the test, as no residual plastic deformation is observed.…”

Section: Resultsmentioning

confidence: 96%

See 1 more Smart Citation

Evidence of Plasticity‐Driven Conductivity Drop in an Ultra‐Low‐k Dielectric Organosilicate Glass

Rusinowicz

Volpi

Parry

et al. 2022

Adv Funct Materials

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Advanced devices (for microelectronics, energy storage, power sourcing) are complex architectures of metals and dielectrics subjected to harsh mechanical stresses. The functional reliability of the embedded dielectrics is driven by their ability to preserve their electrical properties (such as leakage and breakdown). Accordingly, understanding the interplay between the mechanical and electrical behaviors of dielectric films is critical to predict the lifetime of functional devices. In this study, the effect of plastic deformation on the electrical conduction of an ultra‐low‐k dielectric film is elucidated by combining in situ advanced experiments and finite element modeling. Experimentally, “electrical‐nanoindentation” tests emphasize the strong correlation between electrical and mechanical failures (leakage degradation, breakdown, plasticity, cracking). These experiments also reveal a counterintuitive electrical conduction drop under high mechanical stresses. This phenomenon is reproduced numerically by correcting the Poole–Frenkel conduction law with a strain‐dependent factor, and described analytically in terms of space‐charge build‐up induced by the trapping of holes at the mechanically generated defects. A threshold strain is identified as the keystone relating this strain‐dependent conduction to the current line distribution within the dielectric. This study provides a new understanding of the mechanical/electrical couplings in dielectrics, which opens promising insights into reliability issues for advanced devices.

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“…This observation is in accordance with the reported data. [ 14,16,68 ] Figure 2d magnifies the pop‐in feature shown in Figure 1b.…”

Section: Resultsmentioning

confidence: 91%

Section: Resultsmentioning

confidence: 96%

Evidence of Plasticity‐Driven Conductivity Drop in an Ultra‐Low‐k Dielectric Organosilicate Glass

Rusinowicz

Volpi

Parry

et al. 2022

Adv Funct Materials

View full text Add to dashboard Cite

show abstract

“…[ 44 ] Sekhar et al also evidenced this trend in their study of different thickness of low‐ k materials. [ 45 ] As a result, the SAW technique relies on the dispersion curve of the SAW propagation to determine the mechanical properties of films. With the material parameters and elastic constants of the film and substrate taken into account, the theoretical calculation system can eliminate the effect of the substrate and thus reduce error.…”

Section: Resultsmentioning

confidence: 99%

Nondestructive Determination of Young's Modulus of Interconnecting Thin Films by a Broadband Surface Acoustic Wave‐Interdigital Transducer

Zhang

Xiao

et al. 2023

Physica Rapid Research Ltrs

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A facile and rapid method for nondestructive testing (NDT) of the Young's modulus of interconnecting thin films using a broadband surface acoustic wave‐interdigital transducer (SAW‐IDT) is presented herein. A linear periodic SAW‐IDT with 20–125 MHz is designed and fabricated to excite surface acoustic wave (SAW) signals on the samples. By applying burst excitations under different frequencies, the SAW waveforms are picked up by a miniaturized piezoelectric transducer and processed by slant stack transformation. Consequently, the SAW dispersion curves over a wide frequency band are established to match the film parameters. Young's modulus of the 100 and 300 nm thickness of SiO2 films and the 800 and 1500 nm low‐k polyimide (PI) films is characterized. The nanoindentation method, as a control experiment, is also carried out to verify the accuracy of the SAW method, and the test results show that the SAW method can eliminate the effect of the substrate with higher precision. This work shows the advantage of the NDT technique by SAW‐IDT in measuring the Young's modulus of ultrathin films with low cost, controllable frequency range, and high accuracy.

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“…Nanoscratch experiments were performed using an MTS Nanoindenter XP system equipped with a Berkovich (three-sided pyramid) diamond tip. Two distinct nanoscratch modes were used: the ramp-load test and the pass-and-return test (i.e., cyclic wear).…”

Section: Experimental Methodologymentioning

confidence: 99%

Micromechanical Behavior of Polycrystalline Metal–Organic Framework Thin Films Synthesized by Electrochemical Reaction

Buchan

Ryder

Tan

2015

Crystal Growth & Design

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We have studied the mechanical properties of an archetypical metal-organic framework (MOF) polycrystalline thin-film material, termed HKUST-1 or Cu 3 (BTC) 2 , which was synthesized by means of electrochemistry. We demonstrate that the average crystal size and surface coverage of electrochemically grown thin films, with associated coating thickness and surface roughness, can be controlled by adjusting not only the reaction time, but also the anodic substrate surface characteristics. The polycrystalline films were characterized via scanning electron microscopy, optical 3D profilometry, atomic force microscopy, and X-ray diffraction. Using an instrumented nanoindenter, we performed fine-scale nanoscratch measurements under two distinct test modes: (i) ramp-load and (ii) pass-and-return (cyclic wear), to establish the underpinning failure mechanisms of MOF coatings with varied average thicknesses (~2-10 µm). Our results reveal that the ramp-load approach is ideal to pinpoint the critical force required to debond films from the substrate, and the pass-and-return method has the propensity to crush polycrystals into a compacted layer on top of the substrate, but causing no film debonding even at a high number of cycles. Notably the film-to-substrate adhesion strength of electrochemical coatings could be enhanced with increasing HKUST-1 film thickness (~µm), while the attachment of polycrystals is weaken when grown on smoother substrates.

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Influence of thickness on nanomechanical behavior of Black Diamond™ low dielectric thin films for interconnect and packaging applications

Cited by 12 publications

References 26 publications

Evidence of Plasticity‐Driven Conductivity Drop in an Ultra‐Low‐k Dielectric Organosilicate Glass

Evidence of Plasticity‐Driven Conductivity Drop in an Ultra‐Low‐k Dielectric Organosilicate Glass

Nondestructive Determination of Young's Modulus of Interconnecting Thin Films by a Broadband Surface Acoustic Wave‐Interdigital Transducer

Micromechanical Behavior of Polycrystalline Metal–Organic Framework Thin Films Synthesized by Electrochemical Reaction

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