Influence of thickness of the sputtered diamond-like carbon (DLC) on electronic and dielectric parameters of the Au/DLC/n-Si heterojunction

Kurt, Mustafa; Yıldırım, Fatma; Orhan, Zeynep; Aydoğan, Ş.

doi:10.1007/s10854-021-06977-1

Cited by 4 publications

(2 citation statements)

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“…[26][27][28][29] When different thicknesses of interface layer are deposited between the rectifier metal and the semiconductor, as the interfacial layer thickness increases, the charge carriers are less likely to tunnel, resulting in a high barrier height. 30 The ideality factor and barrier height values of Schottky diodes with organic interfacial layer prepared by means of n-Si semiconductor in literature were introduced in Table II. 7,[30][31][32][33] The barrier inhomogeneity in a diode form from dispersion of high and low barrier height local patches.…”

Section: Resultsmentioning

confidence: 99%

“…30 The ideality factor and barrier height values of Schottky diodes with organic interfacial layer prepared by means of n-Si semiconductor in literature were introduced in Table II. 7,[30][31][32][33] The barrier inhomogeneity in a diode form from dispersion of high and low barrier height local patches. 26 These patches have a nanoscale dimension.…”

Section: Resultsmentioning

confidence: 99%

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The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Au/NAMA/n-Si Schottky Diodes

Tuğluoğlu

Pakma²,

Akın³

et al. 2023

ECS J. Solid State Sci. Technol.

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We report the results of temperature-dependent barrier properties of Au/NAMA/n-Si Schottky diode in the low temperature range of 80-330 K. The analysis results of thermionic emission theory showed that the barrier height decreases, and the ideality factor increases towards low temperatures, depend on the barrier height inhomogeneities. The obtained results show the presence of a double Gaussian distributions with standard deviations (σ_0) of 0.073 and 0.18 V and mean barrier height (Φ ̅_b0) values of 0.595 and 1.427 eV in the change of 80-140 and 160-330 K, respectively. Moreover, evaluation of the modified Richardson curve, the values of Richardson constant (A^*) of 321.805 and 110.935 A K-2 cm-2, and mean barrier height of 0.606 and 1.422 eV were found for the low- and high-temperature regions, respectively. The A^* value of 110.935 A K-2 cm-2 is close to the theoretical value of 112 A K-2 cm-2 for n-Si. These results proved that there is barrier inhomogeneity.

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