Influence of the varizonal Si_1-xGe_x solid solution composition on the thermovoltaic effect in n – Si – p – Si_(1-x)Ge_x structure

Abstract

The dependence of the thermogenerated electromotive force and current in a varizonal continuous Si 1-x Gex (0 ≤ x ≤ 1) solid solution on the content of germanium in it under uniform heating has been studied. The samples were the heterostructures of the n − Si − p − Si 1−x Gex (0 ≤ x ≤ 1) type base obtained by the liquid-phase epitaxy. In the temperature range 30-250°C with homogeneous heating in the heterostructures, an electromotive force of 0.3 mV and a current of 3.5 nA were generated, and after carrying out the oblique strip of the epitaxial film, the heterostructures generated - the electromotive force 1.6 mV & current 16 nA.