Influence of the three dimensionality of the HF electromagnetic field on resistivity variations in Si single crystals during FZ growth

Ratnieks, G.; Muižnieks, A.; Buligins, L.; Raming, G.; Mühlbauer, A.; Lüdge, Anke; Riemann, H.

doi:10.1016/s0022-0248(00)00354-7

Cited by 34 publications

(14 citation statements)

References 8 publications

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“…Unfortunately, as electric current is supplied to the inductor ring with two wires, heating and electromagnetic body forces are not uniform in the azimuthal direction. 4 Rotation of the heater is technically difficult to achieve so the most common situation is to rotate the feed rod, the crystal or both to minimize the impact of this deleterious asymmetry.…”

Section: Introductionmentioning

confidence: 99%

Thermocapillary instabilities in a laterally heated liquid bridge with end wall rotation

2011

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The effect of rotation on the stability of thermocapillary driven flow in a laterally heated liquid bridge is studied numerically using the full-zone model of the floating-zone crystal growth technique. A small Prandtl number (0.02) fluid, relevant for semiconductor melts, is studied with an aspect ratio (height to diameter of the melt) equal to one. Buoyancy is neglected. A linear stability analysis of three-dimensional perturbations is performed and shows that for any ratio of angular velocities, a weak rotation rate has the surprising effect of destabilizing the base flow. By systematically varying the rotation rate and ratio of angular velocities, the critical threshold and azimuthal wave number of the most unstable mode is found over a wide range of this two parameter space. Depending on these parameters, the leading eigenmode is a wave propagating either in the positive or negative azimuthal direction, with kinetic energy typically localized close to one of the end walls. These results are of practical interest for industrial crystal growth applications, where rotation is often used to obtain higher quality crystals.

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Section: Introductionmentioning

confidence: 99%

Thermocapillary instabilities in a laterally heated liquid bridge with end wall rotation

2011

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“…Since a silicon crystal-growth experiment was carried out under microgravity [35], this flow has been the target of research. Recently, this effect has been recognized and has been involved in numerical simulation [18,36]. The Marangoni flow shows a marked dependence on oxygen partial pressure of an ambient atmosphere, i.e.…”

Section: Analysis Of Heat-and Mass-transfer Processesmentioning

confidence: 99%

“…3D numerical simulation shows that float-zone crystal growth using RF heating is featured with use of a nonaxisymmetric one-turn coil, as shown in Fig. 1.13 [18]. This causes nonaxisymmetric distribution of the input power in the melt, coupled with crystal rotation.…”

Section: Fz (Float-zone) Si Crystal Growthmentioning

confidence: 99%

Silicon

Hibiya¹,

Hoshikawa²

2010

Bulk Crystal Growth of Electronic, Optical &Amp; Optoelectronic Materials

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“…Table 1 shows its physical properties [12,24]. Figure 4 shows the phase-field evolution shape of a silicon dendritic interface at t = 80 000Dt, where every contour is at an interval of 10 000Dt.…”

Section: Dendritic Shape Of Siliconmentioning

confidence: 99%

Numerical simulation of facet dendritic growth in a forced flow

Chen

ChenC.L.Chen

2009

Can. J. Phys.

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A numerical simulation based on a new regularized phase-field model is developed to describe the silicon solidification in a forced flow. The effect of forced flow, anisotropy, and mesh grid on dendritic growth shape is investigated. These results indicate that crystals grow into an equiaxial facet dendritic without flow and into an asymmetrical facet dendritic with flow, that is, upstream arm growth is promoted, and downstream inhibited, however, there is no such effect on perpendicular arms. It is also found that the asymmetrical growth feature becomes noticeable with increase in the flow velocity. With the increase in the anisotropy value, the tip velocities of upstream and downstream decrease gradually.Résumé : Nous développons une simulation numérique basée sur un nouveau modèle de champ de phase régularisée pour décrire la solidification du silicium dans un flot forcé. Nous étudions les effets du flot forcé, de l'anisotropie et du maillage de réseau sur la forme de la croissance dendritique. Les résultats indiquent que le cristal croît en une facette dendritique équiaxiale sans le flot et en une facette dendritique asymétrique avec le flot, ce qui veut dire avec un bras de croissance accru en amont et diminué en aval, alors qu'il n'y a pas d'effet sur les bras perpendiculaires. Nous trouvons aussi que l'asymétrique de croissance devient plus notable avec l'augmentation de la vitesse du flot. Avec l'augmentation de l'anisotropie, les pointes de vitesse diminuent graduellement en amont et en aval.[Traduit par la Rédaction]

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Influence of the three dimensionality of the HF electromagnetic field on resistivity variations in Si single crystals during FZ growth

Cited by 34 publications

References 8 publications

Thermocapillary instabilities in a laterally heated liquid bridge with end wall rotation

Thermocapillary instabilities in a laterally heated liquid bridge with end wall rotation

Silicon

Numerical simulation of facet dendritic growth in a forced flow

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