Influence of the Thickness of a Layer of Potassium Fluoride Incorporated in the CIGS/CdS Interface on the Macroscopic Electrical Parameters of the Solar Cell

Niane, Djimba; Soce, Mouhamadou Mamour; Domingo, Jean Jude; Diagne, Ousmane; Dieng, Moustapha

doi:10.5539/apr.v11n1p1

Cited by 2 publications

(2 citation statements)

References 6 publications

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“…In the generation characteristic in the Figure 5 more photo-excited charge carriers are shaped in the thick CZTS absorber layer [22,23] . In the ZnS thin film in 500 nm thickness, charge carriers in 1.65×10 21 1/cm 3 .s and 2.37×10 21 1/cm 3 .s, which are formed at position = 2.001 µm and = 2.5 µm, respectively.…”

Section: The Effect Of the Generation/recombination On Pv Performance...mentioning

confidence: 99%

A one-dimensional modeling tool for solar cells called SCAPS on CZTS/ZnS

2023

Proceeding Book of 1st International Conference on Recent and Innovative Results in Engineering and Technology Icriret 2023

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In the study, Zinc sulphide thin films were deposited related to different annealing ambient by ultrasonic spray pyrolysis technique (USP) on soda lime glass substrates. Optical properties of these films were analyzed by using ultraviolet-visible (UV-Vis) spectrophotometry at room temperature. Ultravioletvisible spectroscopy measurements indicate that all ZnS thin films indicated high extinction coefficient in the NIR region. ZnS thin films, which was un annealed and annealed at N2 atmosphere show higher skin depth in the low and high energy bands. However, the skin depth of ZnS thin film annealed at 500 O C at H2S:Ar (1:10) is the lowest compared to the other thin films. Au/CZTS/ZnS-500&ZnS-550/i-ZnO/AZO solar cells that is modelled by SCAPS simulation. The increase of the shallow donor defect density (𝑁 𝐷 ) and Auger electron/hole capture coefficient that deteriorated photovoltaic performance. After Auger electron/hole capture coefficient=10 -24 cm 6 /s, there are recombined that more electrons from the charge carriers formed in ZnS thin film annealed at 500 O C at H2S:Ar. SnO2 intermediate layer, is placed between CZTS and ZnS layers, caused more charge separation at the two interfaces and increased 𝑉 𝑜𝑐 and efficiency of the solar cell.

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Section: The Effect Of the Generation/recombination On Pv Performance...mentioning

confidence: 99%

A one-dimensional modeling tool for solar cells called SCAPS on CZTS/ZnS

2023

Proceeding Book of 1st International Conference on Recent and Innovative Results in Engineering and Technology Icriret 2023

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“…Since the light comes from the upper region, highly photoexcited charge carriers are formed at the first entrance through In doped CdS the thin film. However, when the In doped CdS thin film is highly transparent, less charge generation occurs at the deflection limit because light is transmitted in higher amounts (Abderrezek and Djeghlal, 2019;Niane et. al., 2018).…”

Section: Structural Propertiesmentioning

confidence: 99%

Numerical analysis of the thin film solar cell modelled based on In doped CdS semiconductor

YİĞİT GEZGİN,

BATURAY,

KILIÇ

2023

International Journal of Pure and Applied Sciences

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In this study, pure and 1%, 2% and %3 In-doped CdS thin films were produced by spray pyrolysis method. CdS is an n-type (II-VI group) semiconductor material and used as a buffer layer in solar cells. By doping In into CdS thin film, it was investigated how optical and crystalline behavior of thin film are changed. Using Moss and Herve&Vandamme and Ravindra relations, refractive indices and dielectric coefficients were investigated depending on the band gap of the obtained CdS sample. It has been observed that In element decreases the band gap of CdS thin film, improved its crystal structure and reduced its roughness. Therefore, 3% In doped CdS has gained a more ideal feature for use as an n-type semiconductor in solar cells. CIGS/In doped CdS solar cell was modelled and analysed by SCAPS-1D simulation program by using the physical parameters of the semiconductor layers that make up solar cells as imputs of program. Photovoltaic parameters of solar cell based on donor defect density, the neutral interface defect density and Auger electron/hole capture coefficient which were calculated by using In %3 doped CdS thin film, which has the most ideal n-type semiconductor properties.

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Influence of the Thickness of a Layer of Potassium Fluoride Incorporated in the CIGS/CdS Interface on the Macroscopic Electrical Parameters of the Solar Cell

Cited by 2 publications

References 6 publications

A one-dimensional modeling tool for solar cells called SCAPS on CZTS/ZnS

A one-dimensional modeling tool for solar cells called SCAPS on CZTS/ZnS

Numerical analysis of the thin film solar cell modelled based on In doped CdS semiconductor

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