Influence of the surface states on the nonlinear Hall effect in Weyl semimetals

Ovalle, Diego García; Pezo, Armando; Manchon, Aurélien

doi:10.1103/physrevb.106.214435

Cited by 8 publications

(2 citation statements)

References 70 publications

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“…[8,9] Therefore, a deterministic switching of the FM layer with magnetic easy axis along the y axis is feasible as the positive current can flip the magnetization M from -y to the +y direction, while the negative current can flip the magnetization M from +y to the -y direction by the damping like torque ⃗ 𝜏 DL = 𝜏 0 DL ( M × ( σ × M). [10] The in-plane magnetic anisotropy (IMA) with easy axis along y axis can be easily achieved in a device with an elliptical shape or by magnetic field annealing process. [11] However, in the system with perpendicular magnetic anisotropy (PMA), the damping like torque just tends to align the moment along the +y direction when a positive in-plane current is applied along the +x axis.…”

Section: Introductionmentioning

confidence: 99%

“…[11] However, in the system with perpendicular magnetic anisotropy (PMA), the damping like torque just tends to align the moment along the +y direction when a positive in-plane current is applied along the +x axis. [10] With the removal of the in-plane current, the moment will relax to the easy axis direction (+z or -z directions). Thus, there is no deterministic switching of magnetization in the system with PMA.…”

Section: Introductionmentioning

confidence: 99%

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Field‐Free Switching of Magnetization in Oxide Superlattice by Engineering the Interfacial Reconstruction

Zheng,

Fang,

Wen

et al. 2024

Adv Funct Materials

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Spin‐orbit torque resulting from non‐magnetic materials with strong spin‐orbit coupling enables electrically controlled magnetization switching, offering potential applications in ultralow‐power memory and logic devices. However, such switching of perpendicular magnetization usually requires an in‐plane magnetic field along the applied current direction, which limits its use. To address this challenge, an all‐oxide superlattice is designed and fabricated that show both the perpendicular magneto‐crystalline anisotropy and in‐plane magnetic anisotropies induced by interfacial engineering. The results demonstrate that the coexistence of perpendicular and in plane magnetic anisotropy breaks the symmetry and thus enables the pure electrical switching of perpendicular magnetization.

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