Abstract:Abstract. We investigated GaN/InGaN multiple quantum wells grown by MOCVD for LED application in the blue and green regions. The sample considered was characterized by a significant number of defects on the interfaces between the layers. We examined the heterostructure by means of cathodoluminescence. Due to the composition and the layer's thickness fluctuations on a small and a large scale, we observed peak splitting and broadening. In order to justify our assumption, we compared the experimental results with… Show more
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