Influence of the strain on the formation of GaInAs/GaAs quantum structures

Löffler, Andreas; Reithmaier, J.P.; Forchel, A.; Sauerwald, A.; Peskes, Dennis; Kümmell, T.; Bacher, G.

doi:10.1016/j.jcrysgro.2005.09.009

Cited by 51 publications

(45 citation statements)

References 24 publications

(25 reference statements)

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The occurrence of the second activation energy in very limited number of cases suggests that the QDs are generally uniform (which is also evidenced by a scanning electron microscopy (SEM) images of sample surface [1,9]) and the range of values for this energy (below 4 meV) shows that in the case of the existence of a trapping potential its localization energy is extremely low and can usually be neglected for determining the emission properties even at low temperatures.…”

Section: Resultsmentioning

confidence: 97%

“…The growth is driven by self-organization and results in quantum dots ensemble with certain size and shape distribution on InGaAs wetting layer (the Stranski-Krastanov growth mode). Low strain regime which is an effect of small (883) lattice mismatch of approximately 2% between adjacent layers (quantum dots and substrate) and a low indium content (down to 30%) enable growth of structures elongated in one of the lateral directions - [1][2][3][4][5][6][7][8][9][10] [1]. The nominal thickness of deposited InGaAs equals 4.5 nm (wetting layer and quantum dots) and causes relatively small QD surface density of about 5 × 10 9 cm −2 which is advantageous for single dot spectroscopy.…”

Section: Investigated Structures and Experimental Detailsmentioning

confidence: 99%

“…Those give opportunities to look for new configuration of materials and geometries most suitable for current optoelectronic applications, but also to create new conditions for testing the quantum electrodynamics phenomena in solid state. One of these relatively new groups of nanostructures are GaAs-based quantum dots elongated in one of the lateral dimensions [1,2]. They are very good examples of how a change in structure shape can have a strong influence on physical properties.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Temperature Dependence of Photoluminescence from Epitaxial InGaAs/GaAs Quantum Dots with High Lateral Aspect Ratio

et al. 2011

View full text Add to dashboard Cite

Hereby, we present a study of a thermal quenching of emission from self-assembled epitaxial highly asymmetric quantum dots in InGaAs/GaAs material system for both ensemble and single dot regime. Pronounced interplay between the intensity of wetting layer and quantum dots originated emission was observed as the temperature was increased, evidencing a thermally activated energy transfer between the two parts of the system and an important role of the wetting layer in determining the optical properties of these anisotropic nanostructures. The carrier activation energies have been derived and possible carrier loss mechanisms have been analyzed. Single dot study revealed activation energies slightly varying from dot to dot due to size and shape distribution. The problem of the shape uniformity of individual quantum dot has also been addressed and possibility of additional carrier localization within the investigated structures has been found to be insignificant based on the recorded spectroscopic data.

show abstract

Section: Resultsmentioning

confidence: 97%

Section: Investigated Structures and Experimental Detailsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Temperature Dependence of Photoluminescence from Epitaxial InGaAs/GaAs Quantum Dots with High Lateral Aspect Ratio

et al. 2011

View full text Add to dashboard Cite

show abstract

“…The typical dimensions of these nanostructures are: (20)(21)(22)(23)(24)(25)(26)(27)(28)(29)(30) nm in width, (20-50) nm in length, and (5-7) nm in the vertical direction (including wetting layer). The increase in the lateral size in the strain-based Stranski-Krastanow growth mode was possible due to lowering the strain via decreasing the amount of indium in the InGaAs alloy compound [26]. This has been proven to be a very effective method of enhancing the oscillator strength of QD transitions, leading to the observation of the strong coupling in the single X-single photon regime in QD-micropillar cavities [1].…”

Section: Methodsmentioning

confidence: 99%

“…1(a)]. Therefore, we are limited to QDs with a spectral separation below 1 meV from the CM and are thus probing only a very small subset of the whole QD ensemble which shows an inhomogeneous broadening of 62 meV [26]. As a consequence the investigated QDs are similar in both their vertical size and their In content, which are the crucial factors determining the emission energy.…”

Section: Experimental Methodology: Statistical Approachmentioning

confidence: 99%

Compensation of phonon-induced renormalization of vacuum Rabi splitting in large quantum dots: Towards temperature-stable strong coupling in the solid state with quantum dot-micropillars

et al. 2015

View full text Add to dashboard Cite

We study experimentally the influence of temperature on the emission characteristics of quantum dotmicropillars in the strong coupling regime of cavity quantum electrodynamics (cQED). In particular, we investigate its impact on the vacuum Rabi splitting (VRS) and we address the important question of the temperature stability of the coherent coupling regime in a semiconductor system, which is relevant in view of both fundamental study and future applications. To study the temperature dependence we investigate an unprecedentedly large number of strong coupling cases (89) in a wide temperature range from 10 up to 50 K, which constitutes a good basis for statistical analysis. The experiment indicates a statistically significant increase of the VRS with temperature in contrast to an expected decrease of the VRS due to the dephasing induced by acoustic phonons. From the theoretical point of view, the phonon-induced renormalization of the VRS is calculated using a real-time path-integral approach for strongly confined quantum dots (QDs), which allows for a numerical exact treatment of the coupling between the QD and a continuum of longitudinal acoustic phonons. The absence of the expected decrease of the VRS with temperature in our experimental data can be attributed to a unique optical property of laterally extended In 0.4 Ga 0.6 As QDs used in this study. Their electronic structure facilitates an effective temperature-driven increase of the oscillator strength of the excitonic state by up to 40% in the given temperature range. This leads to enhanced light-matter interaction and overcompensates the phonon-related decrease of the VRS. The observed persistence of strong coupling in the presence of phonon-induced decoherence demonstrates the appealing possibility to counteract detrimental phonon effects in the cQED regime via engineering the electronic structure of QDs.

show abstract

GaAs integrated quantum photonics: Towards compact and multi‐functional quantum photonic integrated circuits

Dietrich

Fiore

Thompson

et al. 2016

Laser & Photonics Reviews

206

214

View full text Add to dashboard Cite

The recent progress in integrated quantum optics has set the stage for the development of an integrated platform for quantum information processing with photons, with potential applications in quantum simulation. Among the different material platforms being investigated, direct-bandgap semiconductors and particularly gallium arsenide (GaAs) offer the widest range of functionalities, including single-and entangled-photon generation by radiative recombination, low-loss routing, electro-optic modulation and single-photon detection. This paper reviews the recent progress in the development of the key building blocks for GaAs quantum photonics and the perspectives for their full integration in a fully-functional and densely integrated quantum photonic circuit.

show abstract

Influence of the strain on the formation of GaInAs/GaAs quantum structures

Cited by 51 publications

References 24 publications

Temperature Dependence of Photoluminescence from Epitaxial InGaAs/GaAs Quantum Dots with High Lateral Aspect Ratio

Temperature Dependence of Photoluminescence from Epitaxial InGaAs/GaAs Quantum Dots with High Lateral Aspect Ratio

Compensation of phonon-induced renormalization of vacuum Rabi splitting in large quantum dots: Towards temperature-stable strong coupling in the solid state with quantum dot-micropillars

GaAs integrated quantum photonics: Towards compact and multi‐functional quantum photonic integrated circuits

Contact Info

Product

Resources

About