2000
DOI: 10.1016/s0013-4686(00)00636-8
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Influence of the space-charge region on electrochemical impedance measurements on passive oxide films on titanium

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Cited by 94 publications
(47 citation statements)
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“…8, it is possible to obtain the flat band potential and the concentration of donors. The value of ε has been taken equal to 60 [48,49] for the calculations. The results are reported in Table 1.…”
Section: Resultsmentioning
confidence: 99%
“…8, it is possible to obtain the flat band potential and the concentration of donors. The value of ε has been taken equal to 60 [48,49] for the calculations. The results are reported in Table 1.…”
Section: Resultsmentioning
confidence: 99%
“…The equivalent electric circuit (Figure 9(a), inset) reflects the morphology of the surface oxide films; the circuit comprises a constant phase element (CPE b ) and resistance (R b ), which describe the capacitive and resistive behaviour, respectively, of the thin, naturally formed barrier (39.7 [39]), C is capacitance (F) and A is surface area (m 2 ). Given that TiO 2 is an n-type semi-conductor, a CPE sc R sc element is introduced into the circuit in order to correctly estimate the film thickness [40,41]. The CPE sc R sc accounts for the capacitance and resistance of a space charge region, which develops in the film.…”
Section: Electrochemical Impedance Spectroscopymentioning
confidence: 99%
“…The relationship between the capacitance, surface roughness, dielectric constant and space charge distance can be seen in equation (5). (5) Where C is the space charge capacitance, is the relative permittivity (dielectric constant) and   is the permittivity of the free space, A is the total surface area (calculated from the surface area ratio acquired from AFM), and L is the depth of the space charge region for a semiconductor [38]. 3.…”
Section: Electrical Properties Of Tio2mentioning
confidence: 99%