2001
DOI: 10.1016/s0040-6090(00)01577-7
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Influence of the post-treatment on the properties of ZnO thin films

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Cited by 186 publications
(75 citation statements)
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“…The obtained optical parameters are summarized in Table 1. These values agree with previously reported one, which varies between 1.9 and 2.2 eV, depends on the preparation techniques and crystalline structure and grain size of the α-Fe2O3 films [5,[15][16][17][18][19][20][21][22]34].…”
Section: 22supporting
confidence: 92%
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“…The obtained optical parameters are summarized in Table 1. These values agree with previously reported one, which varies between 1.9 and 2.2 eV, depends on the preparation techniques and crystalline structure and grain size of the α-Fe2O3 films [5,[15][16][17][18][19][20][21][22]34].…”
Section: 22supporting
confidence: 92%
“…For thin films, sol-gel [11,12], chemical bath deposition [13], reactive evaporation [14,15] and spray pyrolysis [16][17][18][19][20][21]. The elaboration techniques and also the corresponding references given above are not exhaustive.…”
Section: Introductionmentioning
confidence: 99%
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“…At 450 °C the films exhibit a very small channel current dependence on the applied gate field however over the large gate voltage range applied these TFTs were always on -indicative of a large free carrier concentration, Supplementary Figure 3. A change in film composition with increasing temperature will be occurring and the increased current observed in high temperature devices is an combined effect of increased crystallinity and intrinsic defect concentration in combination with the removal of solvent and unreacted precursor residue, which may also explain the observed increase in J SC from the J-V data [32] . In addition to TFT measurements we used AC-Hall to measure Hall mobility, resistivity and carrier concentration of our ZnO.…”
Section: Opv Device Performance With Etl Processing Temperature Variamentioning
confidence: 99%
“…Reports describing improved electrical transport often refer to sol-gel deposited films, [15][16][17] but for films deposited by sputtering or pulsed laser deposition ͑PLD͒, improved electrical transport has only been reported for annealing at moderate temperatures of 350°C in nitrogen 18 and up to 500°C in vacuum. 19,20 For temperatures of 400°C and higher only annealing in hydrogen 21,22 or forming gas 23 leads to improved conductivity.…”
Section: A Annealing Of Uncapped Zno:al Filmsmentioning
confidence: 99%