Influence of the physicochemical nature of chemical stimulators and the way they are introduced into a system on the mechanism of the thermal oxidation of GaAs and InP

Mittova, I. Ya.

doi:10.1134/s0020168514090088

Cited by 13 publications

(7 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The absence of V 2 O 5 in the films suggests that the regeneration cycle for the vanadium in the highest oxidation state, V 5+ ↔ V 4+ , does not take place. This is a characteristic sign that the process follows an oxygen transfer mechanism [10]. Thus, the X ray diffraction data correlate with the kinetic char acteristics of the process and confirm that, in the oxi dation process, V 2 O 5 acts as a chemical stimulator facilitating oxygen transfer to the components of the substrate.…”

Section: Resultssupporting

confidence: 65%

Effect of surface V2O5 nanolayers on the thermal oxidation kinetics of GaAs and the composition and morphology of resulting films

et al. 2015

Self Cite

View full text Add to dashboard Cite

INTRODUCTIONTransition metal oxide nanolayers on the surface of gallium arsenide are effective chemical stimulators of the oxidation of this semiconductor [1]. Depending on the deposition method (mild or harsh), V 2 O 5 on InP leads to different mechanisms of the thermal oxi dation of the semiconductor and, eventually, to differ ent properties of the resulting nanofilms [2,3]. Vana dium pentoxide deposited on the surface of GaAs by magnetron sputtering ensures oxidation by a catalytic mechanism [4]. The use of V 2 O 5 gel enables mild sur face modification of the semiconductor at relatively low temperatures and low energies. Before the thermal oxidation of a heterostructure, interaction between a chemical stimulator layer and components of the sub strate is negligible.The objectives of this work are to assess the kinetics and mechanism of the thermal oxidation of V x O y /GaAs heterostructures produced under mild conditions and determine the composition and sur face morphology of the resulting oxide films. EXPERIMENTAL Vanadium(V) oxide gel synthesized as described by Sladkopevtsev et al. [2] was dispersed using a compres sor disperser, which ensured the preparation of aerosol with a solution droplet size of up to 4-5 μm. The aero sol was deposited on Peltier cooled (111) AGChO n type GaAs semiconductor wafers with a 300 K majority carrier concentration of 5 × 10 16 cm -3 , which were pretreated with a 5 : 1 : 1 mixture of H 2 SO 4 (reagent grade, RF State Standard GOST 4204 77, 92.80%), Н 2 О 2 (extrapure grade, Purity Standard TU 6 02 570 750, 56%), and Н 2 О for 10 min and then rinsed repeatedly in double distilled water. The depo sition time was 3 min. The samples were dried in air. To crystallize amorphous films and remove water, the samples were annealed in air at 300°С for 120 min in an MTP 2M 50 500 resistively heated furnace. The temperature was controlled with an accuracy of ±1°С (OVEN TRM 10).The V x O y /GaAs heterostructures thus produced were oxidized in oxygen (30 L/h) at temperatures of 500, 530, 550, and 570°C for 60 min. The increase in the thickness of the films was determined every 10 min by laser ellipsometry (LEF 754, λ = 632.8 nm, abso lute uncertainty of ±1 nm). The thickness of the vana dium oxide layers was determined in the same way. To verify the laser ellipsometry data [5], the ellipsometric parameters of the films were measured as functions of wavelength on an Ellips 1891 spectral ellipsometer, and the inverse problem was solved using the Cauchy dispersion model [6]. The surface morphology of the Abstract-Vanadium(V) oxide, V 2 O 5 , produces a well defined chemical stimulation effect and can exhibit both oxygen transfer and catalytic behavior in the thermal oxidation of III-V semiconductors. Applying V 2 O 5 gel to the surface of GaAs is a mild surface modification method in which there is no interaction between the chemical stimulator layer and semiconductor substrate before thermal oxidation. Here, we describe the kinetics and mechanism of the thermal oxidation of V x O y /GaAs h...

show abstract

Section: Resultssupporting

confidence: 65%

Effect of surface V2O5 nanolayers on the thermal oxidation kinetics of GaAs and the composition and morphology of resulting films

et al. 2015

Self Cite

View full text Add to dashboard Cite

show abstract

“…In the case of method 2b, a continuous het erointerface is formed before oxidation, which is, in fact, the only active center with the participation of the chemical stimulator and semiconductor components. This leads in a natural way to a synchronous catalytic mechanism of the process [3].…”

Section: Resultsmentioning

confidence: 95%

“…One effective approach to this problem is the chemically stimulated thermal oxida tion of semiconductors, a process in which, all other factors being the same, the principal characteristics of films are determined by the physicochemical nature of the chemical stimulator and the way it is introduced into the system: added to the gas phase or applied to a semiconductor surface [3]. In the latter case, a variety of methods can be used to apply the stimulator: meth ods that strongly modify the semiconductor surface before the beginning of the thermal oxidation process (harsh methods, such as magnetron sputtering, elec troexplosion of wire, and electron beam evaporation) and methods that produce negligible changes on the surface (mild methods, such as metalorganic chemical vapor deposition (MOCVD) and sol-gel processing).…”

Section: Introductionmentioning

confidence: 99%

Surface morphology, composition, and structure of nanofilms grown on InP in the presence of V2O5

et al. 2015

Self Cite

View full text Add to dashboard Cite

Nanofilms have been grown on InP in the presence of V 2 O 5 introduced into the system by differ ent procedures and methods (within one procedure) and their thickness has been determined by spectral ellipsometry. The phase composition of the films has been determined by X ray diffraction, and their surface morphology and structure have been analyzed by atomic force microscopy and transmission electron micros copy. The characteristics of the films have been shown to depend on the procedure (through the gas phase in the course of oxidation or by deposition on the surface before oxidation) and method (magnetron sputtering or deposition from gel) used to introduce the chemical stimulator into the system.

show abstract

“…Выбор хемостимулятора обусловлен: а) увеличением скорости роста плёнки с одновременным снижением рабочих параметров процесса посредством смены его механизма; б) возможностью управления морфологией поверхности, составом и свойствами (оптическими, электрофизическими и т.д.) формируемых плёнок [15].…”

Section: результаты и их обсуждениеunclassified

СОБСТВЕННОЕ ТЕРМИЧЕСКОЕ ОКСИДИРОВАНИЕ GaP КАК ОСНОВА ВЫБОРА ФУНКЦИЙ ХЕМОСТИМУЛЯТОРОВ

Сладкопевцев¹,

Mittova²,

Томина³

et al. 2017

kcmf

View full text Add to dashboard Cite

Установлено, что термооксидирование GaP кислородом при 650-750 ºС приводит к формированию наноразмерных, толщиной не более 100 нм (СЭ, РЭМ), плёнок состава GaPO4 и Ga(PO3)3 с небольшим содержанием Ga2O3 (РФА, ИКС). На их неоднородной поверхности присутствуют поры (АСМ, РЭМ), связанные с испарением P2O5. GaP отличается от InP и GaAs формированием регулярных плёнок собственного оксида при более высоких температурах (от 650 °С), отсутствием в них неокисленных компонентов подложки (ОЭС) и диэлектрическими свойствами. Для снижения температуры, увеличения скорости роста, достижения требуемой морфологии поверхности и варьируемых в широких пределах оптических и электрофизических свойств предложено хемостимулированное термооксидирование GaP. Работа выполнена при поддержке гранта РФФИ (№ 16-43-360595р_а). Исследования проведены с использованием оборудования Центра коллективного пользования научным оборудованием Воронежского госуниверситета.

show abstract

Influence of the physicochemical nature of chemical stimulators and the way they are introduced into a system on the mechanism of the thermal oxidation of GaAs and InP

Cited by 13 publications

References 12 publications

Effect of surface V2O5 nanolayers on the thermal oxidation kinetics of GaAs and the composition and morphology of resulting films

Effect of surface V2O5 nanolayers on the thermal oxidation kinetics of GaAs and the composition and morphology of resulting films

Surface morphology, composition, and structure of nanofilms grown on InP in the presence of V2O5

СОБСТВЕННОЕ ТЕРМИЧЕСКОЕ ОКСИДИРОВАНИЕ GaP КАК ОСНОВА ВЫБОРА ФУНКЦИЙ ХЕМОСТИМУЛЯТОРОВ

Contact Info

Product

Resources

About