Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)

Altuntaş, İsmail; Koçak, Merve Nur; Yolcu, Gamze; Budak, Hasan Feyzi; Kasapoğlu, Ahmet Emre; Horoz, Sabit; Gür, Emre; Demir, İlkay

doi:10.1016/j.mssp.2021.105733

Cited by 18 publications

(14 citation statements)

References 66 publications

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“…Developing non-polar DUV LEDs on non-polar aluminum nitride (AlN) templates is considered to be a promising approach to solve the issues mentioned above [4,5]. Here, the 'non-polar' usually refers to the growth along [11][12][13][14][15][16][17][18][19][20] (a-axis) or (m-axis). The growth planes have equal numbers of the Group III and Group V atoms.…”

Section: Introductionmentioning

confidence: 99%

“…Approaches including the epitaxial lateral overgrowth (ELO) [9,10], surface pretreatment [11][12][13], pulsed atomic layer epitaxy [14,15] and pulsed flow growth [16,17] methods have been proposed to effectively improve the surface flatness. More seriously, high density basal plane stacking faults (BPSFs) in the range of 10 5 -10 6 cm −1 are widely observed in the non-polar AlN films, owing to the inherent mismatch problems in heteroepitaxial system [18].…”

Section: Introductionmentioning

confidence: 99%

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Effects of nitrogen flux and RF sputtering power on the preparation of crystalline a-plane AlN films on r-plane sapphire substrates

Cai¹,

Guo²,

Liu³

et al. 2022

Semicond. Sci. Technol.

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A-plane aluminum nitride (AlN) with high quality is crucial to fabricate high-performance non-polar deep-ultraviolet optoelectronic devices. In this work, we prepared crystalline a-plane AlN films on r-plane sapphire substrates by combining reactive magnetron sputtering and high temperature annealing (HTA). The effects of N2 flux and RF sputtering power on the crystal quality, the surface morphology and the in-plane stress state of a-plane AlN films were comprehensively investigated. The results suggest that the properties of high temperature annealed a-plane AlN (HTA-AlN) films positively depend on the initial states of the sputtered AlN (SP-AlN) films. Increasing the N2 flux or the RF sputtering power can improve the crystalline quality of SP-AlN films by reducing the kinetic energy of deposited particles, which facilitates a-plane AlN deposition. A higher N2 flux smoothens the surface morphology due to the relieved bombardment effect, which is confirmed by the enlarged in-plane tensile stress state. However, a higher sputtering power leads to a rougher surface because of the accelerated deposition rate. With optimized sputtering parameters, a high-quality a-plane HTA-AlN template was obtained with full width at half maximum values of (11-20) plane X-ray rocking curves as low as 1188 and 1224 arcsec along [0001] and [1-100] directions, respectively. The surface presents an ordered stripe-like morphology with a root-mean-square value of 0.79 nm. Our work provides a convenient and effective strategy to prepare high quality a-plane AlN templates and accelerate the versatile application of non-polar DUV-LED devices.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effects of nitrogen flux and RF sputtering power on the preparation of crystalline a-plane AlN films on r-plane sapphire substrates

Cai¹,

Guo²,

Liu³

et al. 2022

Semicond. Sci. Technol.

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“…They provide high coordination with the transition metals due to a pair of electrons orbiting the sp 2 hybrid of the N atom of this azomethine group [6,7]. Moreover, they are organic compounds that have an important place in the development of coordination chemistry because they form highly stable complexes [8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of pyrene-based Fe(II)-complex and its photovoltaic properties

2021

Global NEST: The International Journal

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<p>(E)-2-((pyren-1-ylmethylene)amino)phenol (3) containing pyrene linked through an imine bond to a phenol unit was synthesized and its Fe-complex 4 was prepared. The complex 4 is characterized by infrared (IR), x-ray diffraction (XRD) and UV-Vis spectroscopy techniques. The synthesized complex was used as a sensitizer in a solar cell structure. From the current density (J) - voltage (V) curve obtained, the values of the short-circuit current density (JSC), maximum current density (JM), open-circuit voltage (VOC) and maximum voltage (VM) for the complex 4 were determined as 6.68 mA /cm2, 4.73 mA /cm2, 0.56 V and 0.41 V, respectively. Using these parameters, the fill factor (FF) and power conversion efficiency value (η) of complex 4 were calculated as 0.52 and 1.94, respectively. This value shows that complex 4 can be used as an effective sensitiser in solar cell applications.</p>

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“…Activation is more important than carbonization in terms of the properties of activated carbon. Therefore, more emphasis is placed on activation [8][9]. Three main activation techniques are currently used to produce activated carbon: physical activation, chemical activation and physiochemical.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of activated carbon in the presence of hydrochar from chickpea stalk and its characterization

Genli¹,

Şahin²,

Baytar³

et al. 2021

JOR

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In this study, hydrochar was obtained from chickpea stalk by hydrothermal method. Then, activated carbon was synthesized by chemical activation method using ZnCl2 activator in the presence of this hydrochar. The effects of parameters such as impragnation rate (hydrochar/ZnCl2), impragnation rate, activation temperature and activation time on activated carbon synthesis were investigated. The iodine number of the obtained activated carbon was determined and its characterization was performed by SEM, BET, FTIR measurements. It was determined that the highest iodine number of synthesized activated carbon was 734 mg/g under conditions of impragnation time (24 hour), impragnation rate (1/2), activation temperature (400 oC), and activation time (45 minutes). The BET surface area of the activated carbon with the highest iodine number was determined as 572 m2 /g. The methylene blue number of synthesized activated carbon and hydrochar were found as 105 mg/g and 45 mg/g, respectively.

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Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)

Cited by 18 publications

References 66 publications

Effects of nitrogen flux and RF sputtering power on the preparation of crystalline a-plane AlN films on r-plane sapphire substrates

Effects of nitrogen flux and RF sputtering power on the preparation of crystalline a-plane AlN films on r-plane sapphire substrates

Synthesis of pyrene-based Fe(II)-complex and its photovoltaic properties

Synthesis of activated carbon in the presence of hydrochar from chickpea stalk and its characterization

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