Influence of the nucleation layer morphology on the structural property of AlN films grown on c-plane sapphire by MOCVD

Luo, Weike; Li, Liang; Li, Zhonghui; Yang, Qiankun; Zhang, Dongguo; Dong, Xiaoli; Peng, Daqing; Pan, Lei; Li, Chuanhao; Liu, Bin; Zhong, Rong

doi:10.1016/j.jallcom.2016.12.126

Cited by 33 publications

(7 citation statements)

References 48 publications

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“…Possible defects include argon incorporation and damage from ion bombardment [55]. MOVPE growth typically results in very high quality and purity films [32,56]. However, the film stresses are also high due to high growth temperatures and coefficient of thermal expansion (CTE) mismatch between substrate and film.…”

Section: Discussionmentioning

confidence: 99%

“…The MOVPE film was grown in an Aixtron close-coupled showerhead reactor using a three-step process with pre-growth, low-temperature buffer, and main growth steps. The low-temperature buffer layer has been shown to increase the film quality [32,33]. First, in the pre-growth step, the substrate This results in a self-terminating layer-by-layer growth.…”

Section: Aln Depositionmentioning

confidence: 99%

See 1 more Smart Citation

Mechanical properties and reliability of aluminum nitride thin films

Österlund

Kinnunen

Rontu

et al. 2019

Journal of Alloys and Compounds

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Section: Discussionmentioning

confidence: 99%

Section: Aln Depositionmentioning

confidence: 99%

Mechanical properties and reliability of aluminum nitride thin films

Österlund

Kinnunen

Rontu

et al. 2019

Journal of Alloys and Compounds

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“…A similar analysis also can be applied to the sapphire substrate based on its lattice structure and extinction rule. The inset of Figure 2 d shows the rocking curve of the AlN (002) plane with a full width at half maximum (FWHM) of 144 arcsec, which is in the range of typical values (90 arcsec to 400 arcsec) [ 32 ] and indicates good crystalline quality in the AlN thin film.…”

Section: Resultsmentioning

confidence: 99%

Aluminum Nitride Ultraviolet Light-Emitting Device Excited via Carbon Nanotube Field-Emission Electron Beam

Han

Wei

et al. 2023

Nanomaterials

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With the progress of wide bandgap semiconductors, compact solid-state light-emitting devices for the ultraviolet wavelength region are of considerable technological interest as alternatives to conventional ultraviolet lamps in recent years. Here, the potential of aluminum nitride (AlN) as an ultraviolet luminescent material was studied. An ultraviolet light-emitting device, equipped with a carbon nanotube (CNT) array as the field-emission excitation source and AlN thin film as cathodoluminescent material, was fabricated. In operation, square high-voltage pulses with a 100 Hz repetition frequency and a 10% duty ratio were applied to the anode. The output spectra reveal a dominant ultraviolet emission at 330 nm with a short-wavelength shoulder at 285 nm, which increases with the anode driving voltage. This work has explored the potential of AlN thin film as a cathodoluminescent material and provides a platform for investigating other ultrawide bandgap (UWBG) semiconductors. Furthermore, while using AlN thin film and a carbon nanotube array as electrodes, this ultraviolet cathodoluminescent device can be more compact and versatile than conventional lamps. It is anticipated to be useful in a variety of applications such as photochemistry, biotechnology and optoelectronics devices.

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“…Because growth of high-quality N-polar AlN is challenging, especially considering the surface flatness and defect density, which are similar to those of N-polar GaN. [12][13][14] Another problem is that impurities are easily incorporated in N-polar AlN. 15) Therefore, devices such as UV-LED and UV lasers are generally fabricated on Al-polar (0001) AlN.…”

Section: Introductionmentioning

confidence: 99%

Deep ultraviolet emission from multiple quantum wells on flat N-polar AlN templates fabricated using periodical pulsed H₂ etching

Okada

Sakamoto

Ataka

et al. 2021

Jpn. J. Appl. Phys.

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In a previous study, we successfully grew flat N-polar AlN layers on a c-plane sapphire substrate with a misorientation angle of 2.0°by metalorganic vapor phase epitaxy. However, its surface had undulations due to step bunching, and therefore further improvement of the surface flatness is required. In this study, we employed pulsed H 2 etching during the growth of N-polar AlN layers to improve the surface flatness. Atomic force microscopy results indicated that the surface flatness was significantly improved, exhibiting a root mean square value of 0.4 nm. Further, the deep ultraviolet emission from AlGaN-based multiple quantum wells (MQWs) on the N-polar AlN layers was characterized, and the effect of the surface flatness on the optical characteristics was investigated. The surface flatness was found to play a crucial role in improving the optical characteristics of MQWs on N-polar AlN layers.

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Influence of the nucleation layer morphology on the structural property of AlN films grown on c-plane sapphire by MOCVD

Cited by 33 publications

References 48 publications

Mechanical properties and reliability of aluminum nitride thin films

Mechanical properties and reliability of aluminum nitride thin films

Aluminum Nitride Ultraviolet Light-Emitting Device Excited via Carbon Nanotube Field-Emission Electron Beam

Deep ultraviolet emission from multiple quantum wells on flat N-polar AlN templates fabricated using periodical pulsed H₂ etching

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Influence of the nucleation layer morphology on the structural property of AlN films grown on c-plane sapphire by MOCVD

Cited by 33 publications

References 48 publications

Mechanical properties and reliability of aluminum nitride thin films

Mechanical properties and reliability of aluminum nitride thin films

Aluminum Nitride Ultraviolet Light-Emitting Device Excited via Carbon Nanotube Field-Emission Electron Beam

Deep ultraviolet emission from multiple quantum wells on flat N-polar AlN templates fabricated using periodical pulsed H2 etching

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Deep ultraviolet emission from multiple quantum wells on flat N-polar AlN templates fabricated using periodical pulsed H₂ etching