Influence of the growth temperature of AlN buffer on the quality and stress of GaN films grown on 6H–SiC substrate by MOVPE

Qu, Shuang; Li, Shuqiang; Yan, Peng; Zhu, Xueliang; Wang, Chengxin; Chen, Xiufang; Gao, Yuqiang; Xu, Xiangang

doi:10.1016/j.jallcom.2010.04.185

Cited by 42 publications

(24 citation statements)

References 40 publications

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“…Homoepitaxy is the most effective method to reduce the dislocation density. However, due to the lack of native substrates, GaN has been mainly grown on foreign substrates [5,6]. To decrease the dislocation density of heteroepitaxial GaN, several techniques have been developed, such as epitaxial lateral overgrowth (ELOG) [7], overgrown on etch pits [8], fabrication of nanostructure on substrate [9].…”

Section: Introductionmentioning

confidence: 99%

Characterization of dislocation etch pits in HVPE-grown GaN using different wet chemical etching methods

Zhang

Shao

et al. 2010

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

Characterization of dislocation etch pits in HVPE-grown GaN using different wet chemical etching methods

Zhang

Shao

et al. 2010

Journal of Alloys and Compounds

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“…An InGaN/GaN-based LED was grown on conventional and high purity SiC substrates using a VEECO K465 metal-organic chemical vapor deposition (MOCVD) system [3]. Nitrogen and hydrogen were used together as the carrier gases.…”

Section: Methodsmentioning

confidence: 99%

“…Due to the lack of an affordable large-area GaN substrate, sapphire [2] and silicon carbide (SiC) [3] are the most commonly used substrates for nitride epitaxial growth. A lot of work has been reported attempting to enhance light extraction from the conventional GaN LEDs [4], [5].…”

Section: Introductionmentioning

confidence: 99%

Effect of Beveled SiC Substrate on Light Extraction of Flip-Chip Light-Emitting Diodes

Shen

et al. 2014

IEEE Photon. Technol. Lett.

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We fabricated GaN-based flip-chip light-emitting diodes (FC-LEDs), which were grown on both conventional and high purity SiC substrates. The influence of beveling, thickness, and absorption of the SiC substrate on the light extraction efficiency (LEE) of the FC-LED was investigated by simulation and experiment. From the simulation results, the LEE of the FC-SLED with a 60°beveling angle is higher than that on a rectangular substrate. The experimental results demonstrate that about 15% enhancement of the LEE was achieved by increasing the thickness of the high purity SiC substrate from 120 to 470 µm. A sample with an X pattern on the top face exhibits the highest light output power. The LEE of the FC-SLED can be efficiently enhanced by suitably beveling the substrate with no degradation of the electrical properties.

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“…Typically, an AlN NL with thickness around 100 nm is sufficient to fulfill the purpose. Since the entire HEMT epitaxial structure is built on top of this layer, its crystalline quality has a substantial influence on the crystalline quality of the subsequent GaN epitaxial layer [56]. In addition, its structural parameters including crystalline quality, morphology, microstructures, and thickness play important roles for the thermal properties in the GaN-SiC interfacial region [57].…”

Section: Growth Of the Aln Nucleation Layermentioning

confidence: 99%

MOCVD growth of GaN-based high electron mobility transistor structures

Chen¹

2015

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IICover: surface morphology of a GaN high electron mobility transistor structure grown on a native GaN substrate. The image was obtained with an atomic force microscope. AbstractWide bandgap group-III nitride semiconductors like GaN, AlN, and their alloys are very suitable for the use in high-power, high-frequency electronics, as a result of their superior intrinsic properties. The polarization-induced high-density and high-mobility two-dimensional electron gas (2DEG) forming in (0001) oriented AlGaN/GaN heterostructures enable the epitaxial structure to be utilized for high electron mobility transistors (HEMTs). Outstanding power handling and record high frequency have been demonstrated from GaN-based HEMT devices over time. However, the shortterm stability and the long-term reliability of the device performances remain problematic. In order to make GaN HEMT technology truly take off and breach the civilian market like automotive, telecommunication applications, the problems need to be solved to justify its relatively high cost over the solutions based on Si and GaAs technologies.At the material level, there are two major challenges; one is the reduction of highdensity structural defects in heteroepitaxially grown layers when foreign substrates are used, and the other is the control of "deep" electron traps forming in the middle of the "wide" bandgap by intrinsic defects or extrinsic impurities.The main idea of the present work was therefore to tackle these material issues directly, using an approach called bottom-to-top optimization to improve the overall quality of GaN-based HEMT epitaxial structures grown on semi-insulating (SI) SiC and native GaN substrates. The bottom-to-top optimization means an entire growth process optimization, from in-situ substrate pretreatment to the epitaxial growth and then the cooling process. Great effort was put to gain the understanding of the influence of growth parameters on material properties and consequently to establish an advanced and reproducible growth process. Many state-of-the-art material properties of GaNbased HEMT structures were achieved in this work, including superior structural integrity of AlN nucleation layers for ultra-low thermal boundary resistance, excellent control of residual impurities, outstanding and nearly-perfect crystalline quality of GaN epilayers grown on SiC and native GaN substrates, respectively, and record-high room temperature 2DEG mobility obtained in simple AlGaN/GaN heterostructures.The epitaxial growth of the wide bandgap III-nitride epilayers like GaN, AlN, AlGaN, and InAlN, as well as various GaN-based HEMT structures was all carried out in a hot-wall metalorganic chemical vapor deposition (MOCVD) system. A variety of structural and electrical characterizations were routinely used to provide fast feedback VI for adjusting growth parameters and developing improved growth processes, such as optical microscopy (OM), atomic force microscopy (AFM), x-ray diffraction (XRD), capacitance-voltage measurement (CV) as well as sheet resistance...

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Influence of the growth temperature of AlN buffer on the quality and stress of GaN films grown on 6H–SiC substrate by MOVPE

Cited by 42 publications

References 40 publications

Characterization of dislocation etch pits in HVPE-grown GaN using different wet chemical etching methods

Characterization of dislocation etch pits in HVPE-grown GaN using different wet chemical etching methods

Effect of Beveled SiC Substrate on Light Extraction of Flip-Chip Light-Emitting Diodes

MOCVD growth of GaN-based high electron mobility transistor structures

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