Influence of the Growth Parameters in GaAs Vapor Phase Epitaxy

Abstract

The vapor growth of gallium arsenide by the arsenic trichloride transport method has been studied by measurement of the growth rate vs. several growth parameters varied in broad intervals. Thus the influence of the supersaturation of the source and deposition temperature and of the input arsenic trichloride partial pressure has been studied. Growth has mainly been carried out on (100) crystalline planes, with some experiments on (110). The experimental data allows an estimation of the growth possibilities in unusual conditions, namely at low temperature, low supersaturation, and in a broad range of arsenic trichloride partial pressure. In these latter conditions, pure material is obtained at very high growth rates. All the experimental results can be qualitatively explained by a kinetically controlled growth mechanism involving a surface adsorption layer.

Low‐strain, quantum‐cascade‐laser active regions grown on metamorphic buffer layers for emission in the 3.0–4.0 μm wavelength region

“…Although not generally amenable to the formation of thin‐layer structures, HVPE can form submicron‐thick layers with controlled composition. Step‐graded In x Ga 1− x As HVPE MBLs consisting of nine composition steps, each ∼1.0 μm thick, and a tenth, final uniform composition layer of ∼10 μm thickness thick layer were deposited [40]. The MBLs were grown at rates of up to ∼40 μm/h.…”

Recent Advances in III–V Compounds/Polymer Hybrid Solar Cells

“…Hydride vapor-phase epitaxy (HVPE) has recently become attractive owing to its high growth rate of hundreds of micrometer per hour [45][46][47] for GaAs, while those of MOCVD are generally in the range of 1-5 μm h À1 and even lower for those of MBE. [48] This advantage allows for a decrease in growth time and an increase in the reactor throughput.…”

24% Single‐Junction GaAs Solar Cell Grown Directly on Growth‐Planarized Facets Using Hydride Vapor Phase Epitaxy

“…[ 27,28 ] Differences in the adsorption energies and the activation energies for reduction on different surfaces can thus affect the growth behaviors that drive the growth rate anisotropy needed for planarization. [ 29,30 ] Our prior work showed GaCl and AsH 3 have a significant effect on reducing facet height. [ 25 ] Here, we independently vary the GaCl and AsH 3 flow rates and compare the observed growth rate trends with those caused by known HVPE growth mechanisms to determine the governing processes for planarization.…”