Influence of the -doping sheet and setback layer on the performance of an InGaP/GaAs heterojunction bipolar transistor

The successful fabrication of monolithically integrated photodetectors composed of a heterojunction bipolar transistor (HBT) and a metalsemiconductor-metal (MSM) photodiode was achieved by a patterned oxide growth technique. The photoresponsivities of the ZnS and the ZnSe MSM photodiodes were 0.028 and 0.08 A/W, respectively. Comparison of the performance in terms of optical and electrical characteristics between the ZnS-and the ZnSe-based integrated photodetectors were carried out; at a bias of 5 V, the current amplification ratios were 18.2 and 20.8, respectively. The maximal measurable input optical power intensities were 273 mW for ZnS-based integrated photodetector and 94 mW for ZnSe-based integrated photodetector. This successful integration indicates the potential of the patterned oxide growth technique in the development of integrated devices based on II-VI ZnS and ZnSe compounds for short-wavelength applications.

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“…The expression of the collector-emitter offset voltage of HBT can be determined from the following equation: 16,17)…”

Section: Resultsmentioning

confidence: 99%

Comparison of Performance of Integrated Photodetectors Based on ZnS and ZnSe Metal–Semiconductor–Metal Photodiodes

Chen

Chang

2009

Jpn. J. Appl. Phys.

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“…Over the past years, GaAs-based material system heterojunction bipolar transistors (HBTs) for digital and analogue high-speed circuit applications have been widely investigated [1][2][3][4]. In previous studies on the development of GaAs-based HBTs, two types of heterojunction have attracted much more attention: the Al x Ga 1−x As/GaAs and the InGaP/GaAs material systems.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive study of an InGaP/AlGaAs/GaAs heterojunction bipolar transistor with a continuous conduction-band structure

Cheng¹

2002

Semicond. Sci. Technol.

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A newly designed In 0.49 Ga 0.51 P/Al x Ga 1−x As/GaAs heterojunction bipolar transistor with a continuous conduction-band structure is theoretically analysed and investigated. By introducing a compositionally linear-graded AlGaAs layer into conventional InGaP/GaAs heterojunctions, a zero conduction-band discontinuity and a completely deleted potential spike can be obtained. Due to the suppression of potential spikes at the emitter/base junction, the studied device shows better dc performances such as a lower offset voltage ( 25 mV), lower saturation voltage ( 0.3 V), uniform current gain (∼40) and lower turn-on voltage (∼1.15 V). In addition, better ac performances are achieved. Consequently, the designed structure provides promise for high-performance analogue, digital and microwave device applications.

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“…The advantages associated with the InGaP/GaAs material include a lower surface recombination velocity, a larger valence-band/conduction-band discontinuity ( E V / E C ) ratio, a higher chemical etching selectivity between the InGaP and GaAs layers, an absence of a DX centre problem (which usually occurs in aluminium containing compounds) and a superior long-term reliability [1][2][3]. As a result, high-performance and high-reliability devices, such as heterojunction bipolar transistors (HBTs), field-effect transistors (FETs) and negative-differential-resistance (NDR) devices, have been successfully fabricated and reported [4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Theoretical investigation of an InGaP/GaAs heterostructure-emitter bipolar transistor with a wide-gap collector

Cheng

2002

Semicond. Sci. Technol.

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We theoretically analyse the performance of an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with a wide-gap collector. Using an exact simulation, we report on detailed calculations and studies including majority-carrier and minority-carrier profiles, recombination-rate distributions, and dc and ac performances. By introducing an undoped GaAs spacer and a heavily doped transition layer into the conventional base-collector heterojunctions, the field across the inserted layers is high enough to pull down the potential spike drastically; thus the knee-shaped characteristics and reach-through effect are not observed. Moreover, the base-emitter (B-E) structure, which we have used, contains an effective p-n homojunction and a hetero-confinement layer to substantially reduce the potential spike at the B-E junctions. Therefore the studied device has exhibited a relatively smaller offset voltage and higher current gain than those of a conventional heterojunction bipolar transistor. The simulated results particularly reveal that a proposed HEBT with an appropriately designed device structure exhibits higher efficiency, lower offset voltage ( 30 mV), lower saturation voltage ( 0.5 V), uniform current gain (∼25), lower operated voltage, higher breakdown voltage and improved characteristics as compared to those obtained from a conventional double heterojunction bipolar transistor structure.

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Influence of the -doping sheet and setback layer on the performance of an InGaP/GaAs heterojunction bipolar transistor

Cited by 10 publications

References 14 publications

Comparison of Performance of Integrated Photodetectors Based on ZnS and ZnSe Metal–Semiconductor–Metal Photodiodes

Comparison of Performance of Integrated Photodetectors Based on ZnS and ZnSe Metal–Semiconductor–Metal Photodiodes

Comprehensive study of an InGaP/AlGaAs/GaAs heterojunction bipolar transistor with a continuous conduction-band structure

Theoretical investigation of an InGaP/GaAs heterostructure-emitter bipolar transistor with a wide-gap collector

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