Influence of the deposition pressure on the properties of transparent and conductive ZnO:Ga thin-film produced by r.f. sputtering at room temperature

Assunção, V.; Fortunato, Elvira; Marques, A.; Águas, Hugo; Ferreira, I.; Costa, Maria Elisabete V.; Martins, Rodrigo

doi:10.1016/s0040-6090(02)01184-7

Cited by 288 publications

(127 citation statements)

References 9 publications

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“…The deposition rate of the films decreased with increasing sputtering pressure due to the decrease in mean free path. 18,19) The deposition rate of the films deposited at 30 and 100 mTorr was 14.2 and 9.1 nm/min, respectively. The decrease in deposition rate with increasing pressure was attributed to collision scattering between the sputtered BaTiO 3 and Ar species in the chamber.…”

Section: Effects Of Sputtering Pressure On the Properties Of Batiomentioning

confidence: 99%

Effects of Sputtering Pressure on the Properties of BaTiO3 Films for High Energy Density Capacitors

Park¹

2014

Korean. J. Mater. Res.

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Flexible BaTiO 3 films as dielectric materials for high energy density capacitors were deposited on polyethylene terephthalate (PET) substrates by r.f. magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible BaTiO 3 films were dependent on the sputtering pressure during sputtering. The RMS roughness and crystallite size of the BaTiO 3 increased with increasing sputtering pressure. All BaTiO 3 films had an amorphous structure, regardless of the sputtering pressures, due to the low PET substrate temperature. The composition of films showed an atomic ratio (Ba:Ti:O) of 0.9:1.1:3. The electrical properties of the BaTiO 3 films were affected by the microstructure and roughness. The BaTiO 3 films prepared at 100 mTorr exhibited a dielectric constant of ~80 at 1 kHz and a leakage current of 10 −8 A at 400 kV/cm. Also, films showed polarization of 8 µC/cm 2 at 100 kV/cm and remnant polarization (P r ) of 2 µC/cm 2 . This suggests that sputter deposited flexible BaTiO 3 films are a promising dielectric that can be used in high energy density capacitors owing to their high dielectric constant, low leakage current and stable preparation by sputtering.

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Section: Effects Of Sputtering Pressure On the Properties Of Batiomentioning

confidence: 99%

Effects of Sputtering Pressure on the Properties of BaTiO3 Films for High Energy Density Capacitors

Park¹

2014

Korean. J. Mater. Res.

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“…1) 이 런 장점을 이용하여 ZnO는 가스 센서(gas sensor), 변환 기(transducer), 히터(heater), 서리 제거 장치(defroster), 태 양 전지(solar cell), 희석된 자기 반도체(diluted magnetic semiconductor), 전자 소자(electronic device), 광전자 소자 (optoelectronic device), 발광 다이오드(light emitting diode, LED), 표면 음파 소자(surface acoustic wave device, SAW), 투명 전극(transparent electrode)으로의 다양한 응 용을 갖는 물질이다. [2][3][4][5][6][7][8][9] 최근에는 저온 성장, 높은 전계 효 과 이동도(field effect mobility, 0.2-40 cm 2 /Ns), 우수한 on-off 비율(10 3 -10 6 ), 높은 가시광 파장 투명도 등이 요구 되는 투명 박막 트랜지스터(transparent thin-film transistor, TTFT)에 ZnO를 이용하는 연구가 진행되고 있다. [10][11][12] ZnO 박막을 형성하기 위한 방법으로 스퍼터링(sputtering) 과 펄스 레이저 증착법(pulsed laser deposition, PLD)과 같은 물리 기상 증착법(physical vapor deposition, PVD) 이 사용되어 왔다.…”

Section: 서 론unclassified

Initial Reaction of Zn Precursors with Si (001) Surface for ZnO Thin-Film Growth

Kim

Lee²,

Kim³

2010

Korean. J. Mater. Res.

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We studied the initial reaction mechanism of Zn precursors, namely, di-methylzinc (Zn(CH 3 ) 2 , DMZ) and diethylzinc (Zn(C 2 H 5 ) 2 , DEZ), for zinc oxide thin-film growth on a Si (001) surface using density functional theory. We calculated the migration and reaction energy barriers for DMZ and DEZ on a fully hydroxylized Si (001) surface. The Zn atom of DMZ or DEZ was adsorbed on an O atom of a hydroxyl (-OH) due to the lone pair electrons of the O atom on the Si (001) surface. The adsorbed DMZ or DEZ migrated to all available surface sites, and rotated on the O atom with low energy barriers in the range of 0.00-0.13 eV. We considered the DMZ or DEZ reaction at all available surface sites. The rotated and migrated DMZs reacted with the nearest -OH to produce a uni-methylzinc (-ZnCH 3 , UMZ) group and methane (CH 4 ) with energy barriers in the range of 0.53-0.78 eV. In the case of the DEZs, smaller energy barriers in the range of 0.21-0.35 eV were needed for its reaction to produce a uni-ethylzinc (-ZnC 2 H 5 , UEZ) group and ethane (C 2 H 6 ). Therefore, DEZ is preferred to DMZ due to its lower energy barrier for the surface reaction.Key words ZnO, ALD, Zn precursor, density functional theory. 서 론대표적인 투명 전도 산화물(transparent conducting oxide, TCO)인 산화 아연 (ZnO)은 상온에서 3.37 eV의 넓은 밴 드갭 (band-gap)과 60 meV의 큰 엑시톤 결합 에너지 (exciton binding energy)를 갖는 II-VI 족 화합물이다. 1) 이 런 장점을 이용하여 ZnO는 가스 센서(gas sensor), 변환 기(transducer), 히터(heater), 서리 제거 장치(defroster), 태 양 전지(solar cell), 희석된 자기 반도체(diluted magnetic semiconductor), 전자 소자(electronic device), 광전자 소자 (optoelectronic device), 발광 다이오드(light emitting diode, LED), 표면 음파 소자(surface acoustic wave device, SAW), 투명 전극(transparent electrode)으로의 다양한 응 용을 갖는 물질이다. 2-9) 최근에는 저온 성장, 높은 전계 효 과 이동도(field effect mobility, 0.2-40 cm 2 /Ns), 우수한 on-off 비율(10 3 -10 6 ), 높은 가시광 파장 투명도 등이 요구 되는 투명 박막 트랜지스터(transparent thin-film transistor, TTFT)에 ZnO를 이용하는 연구가 진행되고 있다. [10][11][12] ZnO 박막을 형성하기 위한 방법으로 스퍼터링(sputtering) 과 펄스 레이저 증착법(pulsed laser deposition, PLD)과 같은 물리 기상 증착법(physical vapor deposition, PVD) 이 사용되어 왔다. 12,13) 하지만, 최근에는 정확한 두께 조 절과 우수한 표면 균일성 등의 장점을 갖는 원자층 증착 법(atomic layer deposition ALD)을 이용하여 ZnO가 증착 되고 있다. 14-18) 특히, 박막 트랜지스터(thin-film transistor, TFT)의 활성화 채널층(active channel layer) 형성을 위하 여 저온 박막 공정이 요구되어 ALD 기술이 더욱 중요 해지고 있다. ALD 기술을 이용한 ZnO 박막 형성에는 di-methylzinc (Zn(CH 3 ) 2 , DMZ)와 di-ethylzinc (Zn(C 2 H 5 ) 2 , DEZ)와 같 은 Zn 전구체(precursor)가 사용되고 있다. 18-21) 하지만 Zn 전구체 자체에 대한 계산 연구는 진행되어 왔으나 [22][23][24] , 전 구체와 Si (001) 기판과의 표면 반응에 대한 계산 연구 는 Ren 25) 과 Dong 등 26) 의 보고를 제외하고는 거의 진행 된 것이 없다. 그들은 DEZ의 초기 표면 반응을 이해하

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“…This is mostly due to the difficulties in achieving stable SCs that are fundamental for studying defects in semiconductors by junction spectroscopy techniques like admittance spectroscopy (AS) and deep level transient spectroscopy (DLT S). Below some of the main established results related to defects and impurities, relevant to this Group III elements on Zn site, Al Zn , Ga Zn and In Zn act as donors to ZnO resulting in n-type material with high conductivity and transparency in the visible wavelength range [28,29,30]. Their fingerprints in the band edge photoluminescence spectra have recently been attributed [2], while there is still some dispute on the assignment of the corresponding energy level position obtained from T DH measurements [1].…”

Section: Point Defects and Impurities In Znomentioning

confidence: 99%

Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown ZnO

Schifano¹,

Monakhov²,

Großner³

et al. 2007

Applied Physics Letters

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The formation of Schottky barrier contacts to hydrogen peroxide treated ZnO has been investigated. Low resistivity hydrothermally grown single crystal ZnO wafers of n-type were used. Pd contacts deposited on organic solvent cleaned O face (0001¯) showed Ohmic behavior, while on the H2O2 treated O face up to nine orders of magnitude in rectification of the current was obtained for biases of −2 and +2V. Concurrently, the surface roughness increases from 1.0±0.5 up to 2.0±0.5nm due to the H2O2 treatment. A majority of the contacs deposited were stable or improved their performance by annealing in air at 200°C for 30min. However, the contacts both before and after the annealing exhibited ideality factors of at least ∼1.8 at +0.5V suggesting that the current transport cannot be described as purely thermionic. Finally, results of capacitance versus voltage and capacitance versus temperature measurements are discussed and show a dominant electron state at ∼0.32eV below the conduction band edge.

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Influence of the deposition pressure on the properties of transparent and conductive ZnO:Ga thin-film produced by r.f. sputtering at room temperature

Cited by 288 publications

References 9 publications

Effects of Sputtering Pressure on the Properties of BaTiO3 Films for High Energy Density Capacitors

Effects of Sputtering Pressure on the Properties of BaTiO3 Films for High Energy Density Capacitors

Initial Reaction of Zn Precursors with Si (001) Surface for ZnO Thin-Film Growth

Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown ZnO

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