Influence of the Degree of Crystallinity on the Dispersion of the Optical Parameters of Ge2Sb2Te5 Phase-Change Memory Thin Films

Fedyanina, M. E.; Lazarenko, Petr; Vorobyov, Yu. V.; Kozyukhin, S. A.; Dedkova, A. A.; Yakubov, A. O.; Левицкий, В. С.; Sagunova, I. V.; Шерченков, А. А.

doi:10.1134/s1063782620130060

Cited by 5 publications

(1 citation statement)

References 23 publications

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“…Simulation of the reflectance spectrum was carried out by means of the transfer matrix method [ 1 ] for the GST225 and SiO 2 layers on silicon substrate. For the calculations, the most suitable thicknesses of these layers were chosen as 210 nm and 970 nm, respectively, taking into account the dispersion of the real and imaginary part of the refractive indices in the spectral region [ 40 , 41 ]. The used thicknesses fall within the error band (confidence band) of the experimentally defined values (see Section 2 ).…”

Section: Resultsmentioning

confidence: 99%

Artificial Anisotropy in Ge2Sb2Te5 Thin Films after Femtosecond Laser Irradiation

et al. 2022

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Ge2Sb2Te5 (GST225) looks to be a promising material for rewritable memory devices due to its relatively easy processing and high optical and electrophysical contrast for the crystalline and amorphous phases. In the present work, we combined the possibilities of crystallization and anisotropic structures fabrication using femtosecond laser treatment at the 1250 nm wavelength of 200 nm thin amorphous GST225 films on silicon oxide/silicon substrates. A raster treatment mode and photoexcited surface plasmon polariton generation allowed us to produce mutually orthogonal periodic structures, such as scanline tracks (the period is 120 ± 10 μm) and laser-induced gratings (the period is 1100 ± 50 nm), respectively. Alternating crystalline and amorphous phases at the irradiated surfaces were revealed according to Raman spectroscopy and optical microscopy studies for both types of structures. Such periodic modulation leads to artificial optical and electrophysical anisotropy. Reflectance spectra in the near infrared range differ for various polarizations of probing light, and this mainly results from the presence of laser-induced periodic surface structures. On the other hand, the scanline tracks cause strong conductivity anisotropy for dc measurements in the temperature range of 200–400 K. The obtained results are promising for designing new GST225-based memory devices in which anisotropy may promote increasing the information recording density.

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Section: Resultsmentioning

confidence: 99%

Artificial Anisotropy in Ge2Sb2Te5 Thin Films after Femtosecond Laser Irradiation

et al. 2022

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Influence of phase state, conducting sublayer material and deposition method on mechanical properties and adhesion of Ge2Sb2Te5 thin films

Yakubov,

Lazarenko,

Kirilenko

et al. 2024

Current Applied Physics

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Size effect of the Ge2Sb2Te5 cell atop the silicon nitride O-ring resonator on the attenuation coefficient

Lazarenko

Kovalyuk

et al. 2021

APL Materials

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We have studied transmission spectra of a silicon nitride O-ring resonator with a Ge2Sb2Te5 (GST) thin-film cover. We have performed numerical simulations of the transmission, absorption, reflection, and scattering for the GST cells of various thicknesses and lengths and have also measured transmission spectra O-ring resonators for GST cells of various length and phase states. An analysis of the changes in the Q-factors has enabled us to identify the region of the GST cells where light scattering and absorption dominate and find the size dependence of amorphous and crystalline GST attenuation coefficients. The demonstrated results pave the way to high energy-efficient on-chip devices of a small footprint that can be switched either optically or electrically.

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Influence of the Degree of Crystallinity on the Dispersion of the Optical Parameters of Ge2Sb2Te5 Phase-Change Memory Thin Films

Cited by 5 publications

References 23 publications

Artificial Anisotropy in Ge2Sb2Te5 Thin Films after Femtosecond Laser Irradiation

Artificial Anisotropy in Ge2Sb2Te5 Thin Films after Femtosecond Laser Irradiation

Influence of phase state, conducting sublayer material and deposition method on mechanical properties and adhesion of Ge2Sb2Te5 thin films

Size effect of the Ge2Sb2Te5 cell atop the silicon nitride O-ring resonator on the attenuation coefficient

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