Influence of the degree of order of InGaP on its hardness determined using nanoindentation

Abstract

Articles you may be interested inStrain relaxation of thick (11-22) semipolar InGaN layer for long wavelength nitride-based device Spontaneous atomic ordering takes place during metal-organic vapor phase epitaxy when certain semiconductors alloys start forming long-range arrangements different from their standard lattice unit cells. In the case of InGaP, a zincblende semiconductor, the ordered CuPt͑B͒ structure consists of alternating Ga and In rich ͑111͒ and ͑111͒ planes. In this investigation, InGaP was deposited on ͑001͒ Ge wafers with a 6°miscut toward the ͓111͔ direction in two consecutive experiments. A surfactant was used in experiment A while depositing InGaP to induce a lower degree of order. high resolution x-ray diffraction was used to calculate composition and strain of the InGaP epilayers. The symmetric ͑004͒ as well as the asymmetric ͑224͒ glancing exit reflections were used. The results enabled the extraction of a theoretical band gap energy E g corrected for strain effects. Photoluminescence was used to measure the actual E g . By comparing the two, the degree of order was determined to be 0.12-0.15 for wafers from experiment A and 0.43-0.44 for wafers from experiment B. Atomic force microscopy AFM demonstrated that all experimental wafers had a surface rms roughness of 6.1-7.4 Å. Extensive nanoindentation measurements were performed on samples from both experiments. It was determined that the degree of order has no effect on the nanoindentation hardness of InGaP. Using 1/2 ͑115͒ superlattice reflection scans, the InGaP ordered domains size was estimated to be 28.5 nm for sample B1. No superlattice peak was detected in sample A1. The large ordered domain size in B1 explains why no order-hardening behavior was observed in InGaP.

High-Q Trampoline Resonators from Strained Crystalline InGaP for Integrated Free-Space Optomechanics

“…Alternatively, spontaneous ordering in MOCVD growth may also be a possible reason. 37 This modification of Young's modulus, ΔE(x, θ), can be modeled with a cos(2θ) function as…”

“…This unexpected deviation has also been observed in ref , which attributed it to a defect density that varies along different crystal directions. Alternatively, spontaneous ordering in MOCVD growth may also be a possible reason . This modification of Young’s modulus, Δ E ( x , θ), can be modeled with a cos(2θ) function as .25ex2ex normalΔ E ( x , θ ) = σ ( θ ) / ε ( x ) − E ( x , θ ) infix= α + β nobreak0em0.25em⁡ cos ( 2 θ ) …”

Advanced Characterization of 1 eV GaInAs Inverted Metamorphic Solar Cells

“…The strain factor was obtained using the HRXRD measurements. The calculated residual strain values are small for both samples, i.e., −0.01% for Sample #1and 0.12% for Sample #2, resulting in a band gap energy difference of ΔEgap = 6 meV due to strain [14]. Finally, the ordering factor was discarded since no ordering was found in both GaInAs layers based on the electron diffraction patterns.…”

Investigation of Hydrogen Flux Influence on InGaP Layer and Device Uniformity

“…Additionally, the epitaxial growth conditions of InGaP influence its ordering and, consequently, its bandgap and other properties, expanding the possibilities of its application. These features render InGaP a versatile material in optoelectronics, including solar cells and detectors, and in high-frequency electronics like high-speed integrated circuits and microwave devices, offering vast application prospects [6][7][8][9][10][11][12][13][14][15]. In the field of heterojunction structures, InGaP/GaAs heterojunctions hold significant advantages over the traditional AlGaAs/GaAs heterojunctions.…”