Influence of the Cd/S Molar Ratio on the Optical and Structural Properties of Nanocrystalline CdS Thin Films

Thambidurai, M.; Murugan, N.; Muthukumarasamy, N.; Agilan, S.; Vasantha, S.; Balasundaraprabhu, R.

doi:10.1016/s1005-0302(10)60032-1

Cited by 55 publications

(20 citation statements)

References 28 publications

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“…6-314 XRD spectra data. 17,18 The CdS film formation occurs by heterogeneous nucleation on the substrate surface as heat is transferred to the deposited precursors through the overall reaction shown in (1):…”

Section: Resultsmentioning

confidence: 99%

Inkjet Printed Thin Film Transistors Using Cadmium Sulfide as Active Layer Prepared by In-Situ Micro-Reaction

Ramos

Kabir

Mejía

et al. 2013

ECS Solid State Letters

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We demonstrate an additive ink-jet process to fabricate homogeneous CdS semiconductor films for thin film transistors (TFTs). This process combines in-situ synthesis with ink-jet printing at a maximum processing temperature of 250 • C. The solvent in the reaction is used to dissolve the cadmium and sulfur precursors. The reaction to form the CdS films takes place in a solid-state mode. This method does not require preliminary nanoparticles synthesis or organic stabilizers and results in film with near zero precursor waste. TFTs with mobilities of 7.5 × 10 −2 cm 2 /V · s, threshold voltage (V T ) of 3.4 V and on/off current ratio of 8 × 10 4 were demonstrated.Printed electronics have become a promising technology for flexible electronics. Besides the inexpensive aspect of Inkjet printing, additional advantages include the ability to deposit a wide range of materials, as well as low material wastage. 1-6 Currently, most inkjetprinted semiconductors for flexible electronics are organic, which typically have poor performance with mobilities around 0.1-1 cm 2 /V · s. Stability is also a potential issue for organic materials since its poor air and moisture stability compromise device reliability. 7 On the other hand, inorganic materials, in particular chalcogenide nanoparticles, have attracted the attention because these materials can be solutionprocessed and are chemically stable upon exposure to air. 8 Recently, several authors have reported cadmium sulfide (CdS) semiconductor films and other inorganic layers using printed nanoparticles to demonstrate TFTs. 9-12 Nevertheless, inorganic inks require the synthesis of nanoparticles with tight particle size control and further stabilization to eliminate aggregation and precipitation. One way to eliminate this issue is to use organic stabilizers. However, such stabilizers could act as insulating layers and hinder efficient carrier transport with the concomitant poor electrical performance. 13 In addition, subsequent high temperature annealing processes are necessary to eliminate the organic binders and to further sinter the nanoparticles. This annealing can also result in film cracking and peeling-off. 6 In this letter, we report an inexpensive and low material wastage additive method to grow CdS thin-films for active layer in TFTs. This is an easy and simple process that combines merits of in-situ synthesis where the reaction happens directly at the interface with the substrate (dielectric in this case). Ink-jet printing is used to selectively deposit the material in the desired area and to eliminate further patterning. ExperimentalThe ink was prepared with cadmium acetate dihydrate (Cd(CH 3 COO) 2 · 2H 2 O) [0.1 M] and thiourea (CH 4 N 2 S) [0.2 M] mixed in methanol/ethylene glycol (ratio 95:05). TFTs were fabricated using bottom-gate top-contact architecture. To fabricate the TFTs, 500 nm of SiO 2 were thermally grown on a Si wafer as buffer layer. Then, 5 nm of chrome followed by 100 nm of gold were deposited by E-beam evaporation and patterned to form the gate contac...

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Section: Resultsmentioning

confidence: 99%

Inkjet Printed Thin Film Transistors Using Cadmium Sulfide as Active Layer Prepared by In-Situ Micro-Reaction

Ramos

Kabir

Mejía

et al. 2013

ECS Solid State Letters

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“…The CdS thin films can be deposited by various methods including vacuum deposition [11], spray pyrolysis [12], electro deposition [13] etc. Physically deposited nanostructured CdS thin films have been extensively studied, such as Thambidurai et al [14] reported preparation of nanocrystalline CdS thin film using sol-gel followed by spin coating and presented the quantum confinement effect in the prepared thin film through absorption study. The flower like nanorod structured CdS was reported by Masoud et al [15] via hydrothermal process at relatively lower temperature.…”

Section: Introductionmentioning

confidence: 99%

Effects of air annealing on CdS quantum dots thin film grown at room temperature by CBD technique intended for photosensor applications

Shaikh

Desale

Siddiqui

et al. 2012

Materials Research Bulletin

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“…Thambiduraiet aI., [18] have also reported that the crystallite size was increased with the increase of annealing temperature. The observed XRD pattern was found to match well with the standard JCPDS data (File: 06 -0314) and the similar hexagonal phase were also observed in various literature reports [18,19]. From the XRD data the lattice parameters 'a' & 'c' and the volume of the unit cell are evaluated using the relations,…”

mentioning

confidence: 85%

“…As the annealing temperature is increased, from 473 K to 673 K, the crystallite size of CdS is also found to increase from 7.8 nm to 14.2 nm [ Table 1]. Thambiduraiet aI., [18] have also reported that the crystallite size was increased with the increase of annealing temperature. The observed XRD pattern was found to match well with the standard JCPDS data (File: 06 -0314) and the similar hexagonal phase were also observed in various literature reports [18,19].…”

mentioning

confidence: 88%

Influence of annealing temperature on structural and optical properties of CdS thin films prepared by sol-gel spin coating method

Rathinamala¹,

Parvathi²,

Jeyaprakash³

et al. 2013

International Conference on Advanced Nanomaterials &Amp; Emerging Engineering Technologies

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Cadmium Sulphide (CdS) thin films were deposited on glass substrates by sol -gel spin coating method taking cadmium nitrate and thiourea as the precursor solutions. The influence of annealing temperature on the structural, optical and surface morphological properties of the films was studied. The crystallographic structure and crystallite size were determined from the X -Ray Diffraction study. It reveals that the films have a predominant hexagonal crystal phase with a preferential (0 0 2) plane. Transmittance of the deposited films was significantly higher in the visible region. The calculated optical band gap of the films decreases with increase in annealing temperature. The photoluminescence spectra show that the intensity ofPL emission peaks found to decrease in intensity, with increase in annealing temperature. SEM studies reveal that the grains are spherically shaped and distributed uniformly over the entire surface of the substrate. These examined properties of the films show its feasibility for application in optoelectronic devices, especially for solar cells.

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Influence of the Cd/S Molar Ratio on the Optical and Structural Properties of Nanocrystalline CdS Thin Films

Cited by 55 publications

References 28 publications

Inkjet Printed Thin Film Transistors Using Cadmium Sulfide as Active Layer Prepared by In-Situ Micro-Reaction

Inkjet Printed Thin Film Transistors Using Cadmium Sulfide as Active Layer Prepared by In-Situ Micro-Reaction

Effects of air annealing on CdS quantum dots thin film grown at room temperature by CBD technique intended for photosensor applications

Influence of annealing temperature on structural and optical properties of CdS thin films prepared by sol-gel spin coating method

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