Influence of the Al-Doped ZnO Sputter-Deposition Temperature on Cu(In,Ga)Se2 Solar Cell Performance

Park, Hyeonwook; Alhammadi, Salh; Reddy, Vasudeva Reddy Minnam; Park, Chinho; Kim, Woo Kyoung

doi:10.3390/nano12193326

Cited by 5 publications

(3 citation statements)

References 68 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Modern industries utilize metal oxides abundantly due to their semiconducting nature since they have proven useful in a wide variety of electronic and optoelectronic devices including sensors, transducers [ 1 ], and solar cells [ 2 ]. Metal oxides can be divided into two types depending on their electrical conductivity: n-type and p-type.…”

Section: Introductionmentioning

confidence: 99%

Atom-to-Device Simulation of MoO3/Si Heterojunction Solar Cell

et al. 2022

View full text Add to dashboard Cite

Metal oxides are commonly used in optoelectronic devices due to their transparency and excellent electrical conductivity. Based on its physical properties, each metal oxide serves as the foundation for a unique device. In this study, we opt to determine and assess the physical properties of MoO3 metal oxide. Accordingly, the optical and electronic parameters of MoO3 are evaluated using DFT (Density Functional Theory), and PBE and HSE06 functionals were mainly used in the calculation. It was found that the band structure of MoO3 calculated using PBE and HSE06 exhibited indirect semiconductor properties with the same line quality. Its band gap was 3.027 eV in HSE06 and 2.12 eV in PBE. Electrons and holes had effective masses and mobilities of 0.06673, −0.10084, 3811.11 cm2V−1s−1 and 1630.39 cm2V−1s−1, respectively. In addition, the simulation determined the dependence of the real and imaginary components of the complex refractive index and permittivity of MoO3 on the wavelength of light, and a value of 58 corresponds to the relative permittivity. MoO3 has a refractive index of between 1.5 and 3 in the visible spectrum, which can therefore be used as an anti-reflection layer for solar cells made from silicon. In addition, based on the semiconducting properties of MoO3, it was estimated that it could serve as an emitter layer for a solar cell containing silicon. In this work, we calculated the photoelectric parameters of the MoO3/Si heterojunction solar cell using Sentaurus TCAD (Technology Computing Aided Design). According to the obtained results, the efficiency of the MoO3/Si solar cell with a MoO3 layer thickness of 100 nm and a Si layer thickness of 9 nm is 8.8%, which is 1.24% greater than the efficiency of a homojunction silicon-based solar cell of the same size. The greatest short-circuit current for a MoO3/Si heterojunction solar cell was observed at a MoO3 layer thickness of 60 nm, which was determined by studying the dependency of the heterojunction short-circuit current on the thickness of the MoO3 layer.

show abstract

Section: Introductionmentioning

confidence: 99%

Atom-to-Device Simulation of MoO3/Si Heterojunction Solar Cell

et al. 2022

View full text Add to dashboard Cite

show abstract

“…The FF and efficiency (η) were calculated by using the Equations ( 6) and ( 7). (23) FF = V max × I max V oc × I sc (6)…”

Section: Analysis Of Current Density-voltage Curvementioning

confidence: 99%

“…(4,5) The remarkable efficiency of 23.25% was noted by the researchers using Zn[O,S,OH] x /Zn 0.8 Mg 0.2 O as a dual buffer layer in the fabricated CIGSSe solar cell. (6) For this work, a less toxic metal oxide semiconductor material (namely titanium dioxide) was chosen as the buffer layer. TiO 2 is an appealing material for this application due to its wide band gap, flexible optical and electrical characteristics, chemical and thermal stability, and inexpensive, making it a promising option for large-scale solar cell production.…”

Section: Introductionmentioning

confidence: 99%

Enhancing CIGS Solar Cell Performance with Erbium-Doped TiO2 Nanomaterial: Simulation Study

Jayachithra,

Elampari,

Meena

2023

IJST

View full text Add to dashboard Cite

Objectives: To find a proper rare earth-doped metal-oxide-based buffer layer for CIGS solar cells with improved performance that has less harmfulness than cadmium. Methods: This study concentrated on the synthesis of pure and Erdoped TiO 2 nanomaterials via microwave-assisted hydrothermal method and its characterization results. Additionally, to analyze the performance of TiO 2 and Er-doped TiO 2 as a buffer layer in a CIGS solar cell, numerical simulations were performed using the SCAPS-1D (Solar cell capacitance simulator) software. Findings: The positive outcomes came from the characterization results, which revealed that the synthesized nanomaterials have an anatase phase, microscopic crystallite size, and flower-like shape. The band gap effectively decreases from 3.45 eV for pure TiO 2 to 2.75 eV for Er-doped TiO 2 , which effectively increases the absorption in the visible portion of the solar spectrum. The refractive indices of pure and Er-doped TiO 2 were calculated as 2.37 and 2.50 respectively from their corresponding band gaps. The results from the simulations showed that using a single buffer layer of Er-doped TiO 2 uplifted the performance of the CIGS solar cell, resulting in higher open circuit voltage, increased short-circuit current density with overall efficiency, η = 25.31% compared to pure TiO 2 and CdS-based dual buffer layers. Novelty: For the first time, the Er-TiO 2 nanomaterial was studied as buffer layer material. The numerical simulation and characterization findings justify the adoption of Er-TiO 2 as a buffer layer in CIGS solar cells.

show abstract