Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells

Prudaev, I. А.; Golygin, I. Yu.; Shirapov, S. B.; Romanov, I. S.; Khludkov, S. S.; Толбанов, О. П.

doi:10.1134/s1063782613100230

Cited by 13 publications

(9 citation statements)

References 14 publications

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“…At temperatures greater than room temperature, the thermionic model applied where we can extract a barrier height and intercept; however, at low temperatures larger currents were observed than predicted for pure thermionic behavior. The transition to thermally activate current around room temperature and above is in agreement to a previous LED transport study; 24 however, here we do not have a recombination current due to the absence of holes. Fitting the high temperature data in Fig.…”

Section: B Quantum Well Widthsupporting

confidence: 93%

Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy

Browne

Mazumder

et al. 2015

Journal of Applied Physics

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Structural and optical characterization of InGaN/GaN multiple quantum wells grown by molecular beam epitaxyUnipolar-light emitting diode like structures were grown by NH 3 molecular beam epitaxy on c plane (0001) GaN on sapphire templates. Studies were performed to experimentally examine the effect of random alloy fluctuations on electron transport through quantum well active regions. These unipolar structures served as a test vehicle to test our 2D model of the effect of compositional fluctuations on polarization-induced barriers. Variables that were systematically studied included varying quantum well number from 0 to 5, well thickness of 1.5 nm, 3 nm, and 4.5 nm, and well compositions of In 0.14 Ga 0.86 N and In 0.19 Ga 0.81 N. Diode-like current voltage behavior was clearly observed due to the polarization-induced conduction band barrier in the quantum well region. Increasing quantum well width and number were shown to have a significant impact on increasing the turn-on voltage of each device. Temperature dependent IV measurements clearly revealed the dominant effect of thermionic behavior for temperatures from room temperature and above. Atom probe tomography was used to directly analyze parameters of the alloy fluctuations in the quantum wells including amplitude and length scale of compositional variation. A drift diffusion Schr€ odinger Poisson method accounting for two dimensional indium fluctuations (both in the growth direction and within the wells) was used to correctly model the turn-on voltages of the devices as compared to traditional 1D simulation models. V C 2015 AIP Publishing LLC.

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Section: B Quantum Well Widthsupporting

confidence: 93%

Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy

Browne

Mazumder

et al. 2015

Journal of Applied Physics

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“…In the case of electron leakage, there are three routes by which electrons escape from QWs: thermionic emission, tunneling through defect, 9,10) and electron overflow. [11][12][13][14] As shown in Refs. 15 and 16, drift-induced leakage at high current densities can be the main cause of efficiency droop.…”

Section: Introductionmentioning

confidence: 79%

Effects of GaN barrier thickness on built-in electric field and internal quantum efficiency of blue InGaN/GaN multiple quantum wells LED structures

Romanov

Prudaev

Kopyev

2016

Jpn. J. Appl. Phys.

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The built-in electric field in an InGaN quantum well and emission wavelength are numerically evaluated at various GaN barrier thicknesses in blue InGaN/GaN/Al 2 O 3 LED structures. The effect of GaN barrier thickness on the internal quantum efficiency of these structures was studied experimentally by temperature-and excitation-power-dependent photoluminescence measurements. In LED structures with 3-nm-thick GaN barriers in the active region the internal quantum efficiency at high excitation levels higher than that in LED structures with thicker GaN barriers. The results of measurements indicate that in structures with 3-nm-thick GaN barriers, the Auger recombination rate is reduced.

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“…Injection of charge carriers in the quantum wells occurs at forward biases of the p-n-junction, when the dominant current is the current 0 ob I produced by the overbarrier transitions of charge carriers [12,13] in the active region of the p-n-junction. Each of the overbarrier currents (the electron and hole currents) starts on its own emitter and ends (in contrast to the reverse current of the p-n-junction) in the j-th quantum well, where the hole current recombines with the electron current.…”

Section: Calculation Of the Equivalent Circuit Elements Of A Heterostmentioning

confidence: 99%

Determining the Equivalent Circuit Elements of Heterostructures with Multiple Quantum Wells

Давыдов

Morgunov

2016

Russ Phys J

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Analytical dependences of the equivalent circuit elements of heterostructures on the material properties of quantum wells, their location, and bias voltage of the heterostructure are obtained. On the basis of these dependences, expressions for calculating the dependences of the equivalent capacitance and equivalent resistance of the heterostructure on the test signal frequency and bias voltage are found.Keywords: heterostructure, multiple quantum wells, differential capacitance and resistance of the p-n-junction, capacitance and resistance of the quantum well, differential resistance of the charge-carrier transfer.

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Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells

Cited by 13 publications

References 14 publications

Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy

Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy

Effects of GaN barrier thickness on built-in electric field and internal quantum efficiency of blue InGaN/GaN multiple quantum wells LED structures

Determining the Equivalent Circuit Elements of Heterostructures with Multiple Quantum Wells

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