Influence of temperature and pressure on CdTe: Ag thin film

Hasani, Ebrahim; Raoufi, Davood

doi:10.1080/02670844.2017.1401278

Cited by 9 publications

(2 citation statements)

References 57 publications

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“…The data of refractive index and bandgap values are in accord with the study conducted by Rahman et al [2]. As plotted in Figure 7c, the application of high deposition pressure causes the interatomic distance reduction and higher lattice strain, which probably causes a slightly lower bandgap, as also explained in other literature [51]. Structural disorder and local defects in the samples could be quantified by the Urbach energy (E U ) value [20].…”

Section: Resultssupporting

confidence: 88%

An In-Depth Analysis of CdTe Thin-Film Deposition on Ultra-Thin Glass Substrates via Close-Spaced Sublimation (CSS)

2022

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This study evaluated the impact of the deposition pressure on the formation of cadmium telluride (CdTe) thin films on ultra-thin (100 µm) Schott glass substrate at high temperature (T > 450 °C) by Close-Spaced Sublimation (CSS) technique. CdTe thin films were grown under the pressure range of 1 Torr to 200 Torr to explore the impact of deposition pressure on CdTe thin-film properties. The microstructural, compositional and optoelectrical characteristics were examined. X-ray Diffraction (XRD) analysis revealed the cubic phase crystallite CdTe films with (111) preferential orientation. Scanning Electron Microscopy (SEM) demonstrated that the CdTe morphology and grain size could be regulated via the deposition pressure, whereby maximum grain growth was detected at low pressure (1–5 Torr). The thickness of CdTe films was reduced from 6 µm to 1.5 µm with the rise in deposition pressure. Moreover, the optical direct energy gap was derived in the range of 1.65–1.69 eV for the pressure value of 200 Torr to 1 Torr. Carrier density and resistivity were found to be in the order of 1013 cm−3 and 104 Ω cm, respectively. The experimental results suggest that the pressure range of 1–5 Torr may be ideal for CSS-grown CdTe films on flexible ultra-thin glass (UTG) substrates.

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Section: Resultssupporting

confidence: 88%

An In-Depth Analysis of CdTe Thin-Film Deposition on Ultra-Thin Glass Substrates via Close-Spaced Sublimation (CSS)

2022

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“…Here the absorption coefficient, α, is calculated from equation (5), h is the Planck constant, v is the light frequency, C is a constant value between 10 7 m −1 and 10 8 m −1 , depending on the electron-hole mobility, and n is equal to 2 for direct energy band gap (E g ) [59]. The previous findings indicate that some factors like substrate nature, crystallographic parameters, mobility, quantum size effect, deviation from the stoichiometric behavior, carrier concentration, and impurities can affect the energy band gap [23,[60][61][62].…”

Section: Optical Properties Of the Deposited Cds Thin Filmsmentioning

confidence: 99%

Effect of substrate type on the physical properties of thermally evaporated CdS thin films for CdTe/CdS solar cells applications

et al. 2023

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Cadmium Sulfide (CdS) thin films were grown on crystal quartz as a nonconductive substrate, and Indium tin oxide (ITO) and Fluorine doped tin oxide (FTO) as transparent conducting oxide (TCO) films. The thin films with the thickness of 100 nm were fabricated at 150 °C under the pressure of 2×10-5 mbar using the thermal evaporation method. The X-ray diffraction (XRD) results showed that all grown CdS films had cubic crystal structures with the preferred orientation (111) and a crystallite size between 11.72 nm and 14.84 nm. Raman spectra also revealed an increase in peak intensity and shift toward single-crystal mode in the films grown on TCOs. The homogeneous and uniform surfaces of CdS films were shown in scanning electron microscopy (SEM) images. The optical parameters of the deposited CdS thin films such as absorption, transmission, refractive index, extinction coefficient, and real and imaginary parts of dielectric constant, were improved. The energy band gap of the films was decreased from 2.45 eV for the CdS/quartz film to 2.36 eV for the CdS/FTO one. The key electrical parameters of the deposited films on TCO, such as conductivity, mobility and carrier concentration, as calculated by the Hall effect measurement system, were enhanced too. High efficient heterojunction cadmium telluride (CdTe)-based solar cells with the experimentally grown CdS films were designed by SCAPS-1D simulator. The efficiency of the designed cells with CdS/quartz, CdS/ITO, and CdS/FTO layers was obtained to be 19.40%, 21.23%; and 21.16%, respectively. The impact of the CdTe absorber layer thickness and device temperature on the photovoltaic parameters of the simulated cells was then investigated. The optimized cell was obtained for an Au/CdTe/CdS/ITO structure with the efficiency of 22.80% by employing a 3 µm thickness of the CdTe layer at a device temperature of 300 K.

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Effect of Substrate Properties on Nanostructure and Optical Properties of CdTe Thin Films

Hasani

Kamalian

Arashti

et al. 2019

Journal of Elec Materi

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Influence of temperature and pressure on CdTe: Ag thin film

Cited by 9 publications

References 57 publications

An In-Depth Analysis of CdTe Thin-Film Deposition on Ultra-Thin Glass Substrates via Close-Spaced Sublimation (CSS)

An In-Depth Analysis of CdTe Thin-Film Deposition on Ultra-Thin Glass Substrates via Close-Spaced Sublimation (CSS)

Effect of substrate type on the physical properties of thermally evaporated CdS thin films for CdTe/CdS solar cells applications

Effect of Substrate Properties on Nanostructure and Optical Properties of CdTe Thin Films

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